GB1030669A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1030669A GB1030669A GB4896164A GB4896164A GB1030669A GB 1030669 A GB1030669 A GB 1030669A GB 4896164 A GB4896164 A GB 4896164A GB 4896164 A GB4896164 A GB 4896164A GB 1030669 A GB1030669 A GB 1030669A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- region
- moat
- semi
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000005299 abrasion Methods 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000010297 mechanical methods and process Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
1,030,669. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Dec. 2, 1964, No. 48961/64. Heading H1K. In a PNPN device comprising anode, cathode, gate, and base regions formed in a semi-conductor wafer, a layer covering the whole surface of the wafer is divided into an anode region and a gate region (containing the cathode region 3) by means of a groove or moat F extending more than halfway through the wafer from one face thereof in order to prevent surface breakdown under reverse bias. During the successive diffusions involved in making the device, use is made of the property possessed by silicon dioxide of acting as a mask for phosphorus but not for gallium. The groove or moat F may be produced by etching or by air abrasion or other mechanical method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4896164A GB1030669A (en) | 1964-12-02 | 1964-12-02 | Semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4896164A GB1030669A (en) | 1964-12-02 | 1964-12-02 | Semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1030669A true GB1030669A (en) | 1966-05-25 |
Family
ID=10450606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4896164A Expired GB1030669A (en) | 1964-12-02 | 1964-12-02 | Semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1030669A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3513359A (en) * | 1966-12-02 | 1970-05-19 | Ass Elect Ind | Pressure contact semiconductor devices |
| US3628106A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with protective peripheral junction portion |
-
1964
- 1964-12-02 GB GB4896164A patent/GB1030669A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3513359A (en) * | 1966-12-02 | 1970-05-19 | Ass Elect Ind | Pressure contact semiconductor devices |
| US3628106A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with protective peripheral junction portion |
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