BE832633A - PROFILING THE EDGES OF SEMI-CONDUCTIVE PELLETS - Google Patents

PROFILING THE EDGES OF SEMI-CONDUCTIVE PELLETS

Info

Publication number
BE832633A
BE832633A BE159371A BE159371A BE832633A BE 832633 A BE832633 A BE 832633A BE 159371 A BE159371 A BE 159371A BE 159371 A BE159371 A BE 159371A BE 832633 A BE832633 A BE 832633A
Authority
BE
Belgium
Prior art keywords
profiling
semi
edges
conductive pellets
pellets
Prior art date
Application number
BE159371A
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE832633A publication Critical patent/BE832633A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Weting (AREA)
  • Bipolar Transistors (AREA)
BE159371A 1974-08-21 1975-08-21 PROFILING THE EDGES OF SEMI-CONDUCTIVE PELLETS BE832633A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49928874A 1974-08-21 1974-08-21

Publications (1)

Publication Number Publication Date
BE832633A true BE832633A (en) 1975-12-16

Family

ID=23984661

Family Applications (1)

Application Number Title Priority Date Filing Date
BE159371A BE832633A (en) 1974-08-21 1975-08-21 PROFILING THE EDGES OF SEMI-CONDUCTIVE PELLETS

Country Status (7)

Country Link
JP (1) JPS5146076A (en)
BE (1) BE832633A (en)
CA (1) CA1038969A (en)
DE (1) DE2536108A1 (en)
FR (1) FR2282722A1 (en)
GB (1) GB1471116A (en)
IT (1) IT1040004B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7607298A (en) * 1976-07-02 1978-01-04 Philips Nv PROCESS FOR MANUFACTURING A DEVICE AND DEVICE MANUFACTURED ACCORDING TO THE PROCESS.
FR2410366A1 (en) * 1977-11-29 1979-06-22 Radiotechnique Compelec MESA TYPE TRANSISTOR AND METHOD FOR MAKING THIS TRANSISTOR
JPS5895553A (en) * 1981-12-01 1983-06-07 Nippon Shokubai Kagaku Kogyo Co Ltd Manufacture of honeycomb structure catalyst having improved thermal shock resistance
DE3422051C2 (en) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silicon semiconductor component with an edge contour produced by etching technology and a method for producing this component
GB2176338A (en) * 1985-06-06 1986-12-17 Marconi Electronic Devices Edge contouring in a semiconductor device
JPH0777240B2 (en) * 1989-01-20 1995-08-16 富士通株式会社 Method for manufacturing semiconductor device
JPH03129854A (en) * 1989-10-16 1991-06-03 Toshiba Corp Manufacture of semiconductor device
DE19536438A1 (en) * 1995-09-29 1997-04-03 Siemens Ag Semiconductor device and manufacturing process

Also Published As

Publication number Publication date
CA1038969A (en) 1978-09-19
GB1471116A (en) 1977-04-21
IT1040004B (en) 1979-12-20
FR2282722A1 (en) 1976-03-19
DE2536108A1 (en) 1976-03-11
JPS5227033B2 (en) 1977-07-18
JPS5146076A (en) 1976-04-20

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