FR2410366A1 - Transistor de type mesa et procede de realisation de ce transistor - Google Patents
Transistor de type mesa et procede de realisation de ce transistorInfo
- Publication number
- FR2410366A1 FR2410366A1 FR7735851A FR7735851A FR2410366A1 FR 2410366 A1 FR2410366 A1 FR 2410366A1 FR 7735851 A FR7735851 A FR 7735851A FR 7735851 A FR7735851 A FR 7735851A FR 2410366 A1 FR2410366 A1 FR 2410366A1
- Authority
- FR
- France
- Prior art keywords
- transistor
- face
- making
- base
- mesa type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
TRANSTOR LIMITE LATERALEMENT PAR UNE FACE OBLIQUE SUR LAQUELLE AFFLEURE LA JONCTION BASE-COLLECTEUR. LA FACE OBLIQUE EST PROLONGEE PAR UN SILLON QUI S'ENFONCE, A TRAVERS LA REGION DE COLLECTEUR, JUSQUE DANS LE SUBSTRAT SOUS-JACENT, SILLON DONT LES FLANCS SONT ENTOURES, SUR UNE FAIBLE EPAISSEUR, PAR UNE ZONE SEMI-CONDUCTRICE DE MEME TYPE DE CONDUCTIVITE QUE CELUI DE LA REGION COLLECTEUR ENVIRONNANTE, MAIS NETTEMENT PLUS DOPEE QUE CETTE DERNIERE. APPLICATION A LA REALISATION DE TRANSISTORS A FORTE TENSION D'ISOLEMENT BASE-COLLECTEUR.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7735851A FR2410366A1 (fr) | 1977-11-29 | 1977-11-29 | Transistor de type mesa et procede de realisation de ce transistor |
US05/961,333 US4249195A (en) | 1977-11-29 | 1978-11-16 | Mesa-type transistor and method of producing same |
GB7845923A GB2009499B (en) | 1977-11-29 | 1978-11-24 | Semiconductor device |
JP14543478A JPS5483383A (en) | 1977-11-29 | 1978-11-27 | Semiconductor and method of fabricating same |
DE19782851186 DE2851186A1 (de) | 1977-11-29 | 1978-11-27 | Transistor vom mesatyp und verfahren zur herstellung dieses transistors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7735851A FR2410366A1 (fr) | 1977-11-29 | 1977-11-29 | Transistor de type mesa et procede de realisation de ce transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2410366A1 true FR2410366A1 (fr) | 1979-06-22 |
FR2410366B1 FR2410366B1 (fr) | 1982-02-26 |
Family
ID=9198188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7735851A Granted FR2410366A1 (fr) | 1977-11-29 | 1977-11-29 | Transistor de type mesa et procede de realisation de ce transistor |
Country Status (5)
Country | Link |
---|---|
US (1) | US4249195A (fr) |
JP (1) | JPS5483383A (fr) |
DE (1) | DE2851186A1 (fr) |
FR (1) | FR2410366A1 (fr) |
GB (1) | GB2009499B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0150328A1 (fr) * | 1983-12-27 | 1985-08-07 | International Business Machines Corporation | Structure semi-conductrice définie à l'aide de rainures |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404658A (en) * | 1980-03-12 | 1983-09-13 | Harris Corporation | Mesa bipolar memory cell and method of fabrication |
US6127720A (en) * | 1997-05-19 | 2000-10-03 | Matsushita Electronics Corporation | Semiconductor device and method for manufacturing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3772577A (en) * | 1972-02-10 | 1973-11-13 | Texas Instruments Inc | Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same |
FR2220877A1 (en) * | 1973-03-09 | 1974-10-04 | Thomson Csf | PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation |
FR2282722A1 (fr) * | 1974-08-21 | 1976-03-19 | Rca Corp | Procede pour profiler des plaquettes semi-conductrices et dispositif ainsi obtenu |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4165516A (en) * | 1975-04-28 | 1979-08-21 | U.S. Philips Corporation | Semiconductor device and method of manufacturing same |
NL7604951A (nl) * | 1976-05-10 | 1977-11-14 | Philips Nv | Glas voor het passiveren van halfgeleider- inrichtingen. |
-
1977
- 1977-11-29 FR FR7735851A patent/FR2410366A1/fr active Granted
-
1978
- 1978-11-16 US US05/961,333 patent/US4249195A/en not_active Expired - Lifetime
- 1978-11-24 GB GB7845923A patent/GB2009499B/en not_active Expired
- 1978-11-27 JP JP14543478A patent/JPS5483383A/ja active Pending
- 1978-11-27 DE DE19782851186 patent/DE2851186A1/de not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3772577A (en) * | 1972-02-10 | 1973-11-13 | Texas Instruments Inc | Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same |
FR2220877A1 (en) * | 1973-03-09 | 1974-10-04 | Thomson Csf | PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation |
FR2282722A1 (fr) * | 1974-08-21 | 1976-03-19 | Rca Corp | Procede pour profiler des plaquettes semi-conductrices et dispositif ainsi obtenu |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0150328A1 (fr) * | 1983-12-27 | 1985-08-07 | International Business Machines Corporation | Structure semi-conductrice définie à l'aide de rainures |
Also Published As
Publication number | Publication date |
---|---|
DE2851186A1 (de) | 1979-06-07 |
JPS5483383A (en) | 1979-07-03 |
FR2410366B1 (fr) | 1982-02-26 |
GB2009499B (en) | 1982-03-10 |
GB2009499A (en) | 1979-06-13 |
US4249195A (en) | 1981-02-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |