FR2410366A1 - Transistor de type mesa et procede de realisation de ce transistor - Google Patents

Transistor de type mesa et procede de realisation de ce transistor

Info

Publication number
FR2410366A1
FR2410366A1 FR7735851A FR7735851A FR2410366A1 FR 2410366 A1 FR2410366 A1 FR 2410366A1 FR 7735851 A FR7735851 A FR 7735851A FR 7735851 A FR7735851 A FR 7735851A FR 2410366 A1 FR2410366 A1 FR 2410366A1
Authority
FR
France
Prior art keywords
transistor
face
making
base
mesa type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7735851A
Other languages
English (en)
Other versions
FR2410366B1 (fr
Inventor
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7735851A priority Critical patent/FR2410366A1/fr
Priority to US05/961,333 priority patent/US4249195A/en
Priority to GB7845923A priority patent/GB2009499B/en
Priority to DE19782851186 priority patent/DE2851186A1/de
Priority to JP14543478A priority patent/JPS5483383A/ja
Publication of FR2410366A1 publication Critical patent/FR2410366A1/fr
Application granted granted Critical
Publication of FR2410366B1 publication Critical patent/FR2410366B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/441—Vertical BJTs having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs

Landscapes

  • Bipolar Transistors (AREA)

Abstract

TRANSTOR LIMITE LATERALEMENT PAR UNE FACE OBLIQUE SUR LAQUELLE AFFLEURE LA JONCTION BASE-COLLECTEUR. LA FACE OBLIQUE EST PROLONGEE PAR UN SILLON QUI S'ENFONCE, A TRAVERS LA REGION DE COLLECTEUR, JUSQUE DANS LE SUBSTRAT SOUS-JACENT, SILLON DONT LES FLANCS SONT ENTOURES, SUR UNE FAIBLE EPAISSEUR, PAR UNE ZONE SEMI-CONDUCTRICE DE MEME TYPE DE CONDUCTIVITE QUE CELUI DE LA REGION COLLECTEUR ENVIRONNANTE, MAIS NETTEMENT PLUS DOPEE QUE CETTE DERNIERE. APPLICATION A LA REALISATION DE TRANSISTORS A FORTE TENSION D'ISOLEMENT BASE-COLLECTEUR.
FR7735851A 1977-11-29 1977-11-29 Transistor de type mesa et procede de realisation de ce transistor Granted FR2410366A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7735851A FR2410366A1 (fr) 1977-11-29 1977-11-29 Transistor de type mesa et procede de realisation de ce transistor
US05/961,333 US4249195A (en) 1977-11-29 1978-11-16 Mesa-type transistor and method of producing same
GB7845923A GB2009499B (en) 1977-11-29 1978-11-24 Semiconductor device
DE19782851186 DE2851186A1 (de) 1977-11-29 1978-11-27 Transistor vom mesatyp und verfahren zur herstellung dieses transistors
JP14543478A JPS5483383A (en) 1977-11-29 1978-11-27 Semiconductor and method of fabricating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7735851A FR2410366A1 (fr) 1977-11-29 1977-11-29 Transistor de type mesa et procede de realisation de ce transistor

Publications (2)

Publication Number Publication Date
FR2410366A1 true FR2410366A1 (fr) 1979-06-22
FR2410366B1 FR2410366B1 (fr) 1982-02-26

Family

ID=9198188

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7735851A Granted FR2410366A1 (fr) 1977-11-29 1977-11-29 Transistor de type mesa et procede de realisation de ce transistor

Country Status (5)

Country Link
US (1) US4249195A (fr)
JP (1) JPS5483383A (fr)
DE (1) DE2851186A1 (fr)
FR (1) FR2410366A1 (fr)
GB (1) GB2009499B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0150328A1 (fr) * 1983-12-27 1985-08-07 International Business Machines Corporation Structure semi-conductrice définie à l'aide de rainures

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404658A (en) * 1980-03-12 1983-09-13 Harris Corporation Mesa bipolar memory cell and method of fabrication
US4355457A (en) 1980-10-29 1982-10-26 Rca Corporation Method of forming a mesa in a semiconductor device with subsequent separation into individual devices
US6127720A (en) * 1997-05-19 2000-10-03 Matsushita Electronics Corporation Semiconductor device and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3772577A (en) * 1972-02-10 1973-11-13 Texas Instruments Inc Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same
FR2220877A1 (en) * 1973-03-09 1974-10-04 Thomson Csf PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation
FR2282722A1 (fr) * 1974-08-21 1976-03-19 Rca Corp Procede pour profiler des plaquettes semi-conductrices et dispositif ainsi obtenu

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4165516A (en) * 1975-04-28 1979-08-21 U.S. Philips Corporation Semiconductor device and method of manufacturing same
NL7604951A (nl) * 1976-05-10 1977-11-14 Philips Nv Glas voor het passiveren van halfgeleider- inrichtingen.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3772577A (en) * 1972-02-10 1973-11-13 Texas Instruments Inc Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same
FR2220877A1 (en) * 1973-03-09 1974-10-04 Thomson Csf PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation
FR2282722A1 (fr) * 1974-08-21 1976-03-19 Rca Corp Procede pour profiler des plaquettes semi-conductrices et dispositif ainsi obtenu

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0150328A1 (fr) * 1983-12-27 1985-08-07 International Business Machines Corporation Structure semi-conductrice définie à l'aide de rainures

Also Published As

Publication number Publication date
GB2009499A (en) 1979-06-13
JPS5483383A (en) 1979-07-03
GB2009499B (en) 1982-03-10
US4249195A (en) 1981-02-03
DE2851186A1 (de) 1979-06-07
FR2410366B1 (fr) 1982-02-26

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Legal Events

Date Code Title Description
ST Notification of lapse