FR2220877A1 - PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation - Google Patents

PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation

Info

Publication number
FR2220877A1
FR2220877A1 FR7308561A FR7308561A FR2220877A1 FR 2220877 A1 FR2220877 A1 FR 2220877A1 FR 7308561 A FR7308561 A FR 7308561A FR 7308561 A FR7308561 A FR 7308561A FR 2220877 A1 FR2220877 A1 FR 2220877A1
Authority
FR
France
Prior art keywords
pin
electrodes
separation
chip
parallel trenches
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7308561A
Other languages
French (fr)
Other versions
FR2220877B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7308561A priority Critical patent/FR2220877A1/en
Publication of FR2220877A1 publication Critical patent/FR2220877A1/en
Application granted granted Critical
Publication of FR2220877B1 publication Critical patent/FR2220877B1/fr
Priority to FR7705255A priority patent/FR2382093A2/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Element Separation (AREA)

Abstract

The PIN diodes are constructed from a PIN chip sandwiched between two electrode layers and supported by a metal base. Parallel trenches are etched down through the top electrode and over halfway through the PIN chip to separate out the individual PIN diodes. A second longer etching process removes part of the PIN material from underneath the edges of the discrete top electrodes to form Ts and deepens the trench to reach the lower electrode. The T structures and trenches are then covered in a layer of passive material. This material is then removed from the tops of the upper electrodes. The metal base is finally removed and the diodes are separated from one another.
FR7308561A 1973-03-09 1973-03-09 PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation Granted FR2220877A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7308561A FR2220877A1 (en) 1973-03-09 1973-03-09 PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation
FR7705255A FR2382093A2 (en) 1973-03-09 1977-02-23 PIN semiconductor element fabrication - uses highly doped support layer and etching of grooves

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7308561A FR2220877A1 (en) 1973-03-09 1973-03-09 PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation

Publications (2)

Publication Number Publication Date
FR2220877A1 true FR2220877A1 (en) 1974-10-04
FR2220877B1 FR2220877B1 (en) 1976-06-11

Family

ID=9116075

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7308561A Granted FR2220877A1 (en) 1973-03-09 1973-03-09 PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation

Country Status (1)

Country Link
FR (1) FR2220877A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2363888A1 (en) * 1976-09-03 1978-03-31 Philips Nv PROCESS FOR THE REALIZATION OF A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THUS REALIZED
FR2410366A1 (en) * 1977-11-29 1979-06-22 Radiotechnique Compelec MESA TYPE TRANSISTOR AND METHOD FOR MAKING THIS TRANSISTOR
EP0211609A2 (en) * 1985-08-01 1987-02-25 Unilever Plc Chemically sensitive semiconductor devices and their production
US5557149A (en) * 1994-05-11 1996-09-17 Chipscale, Inc. Semiconductor fabrication with contact processing for wrap-around flange interface

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152939A (en) * 1960-08-12 1964-10-13 Westinghouse Electric Corp Process for preparing semiconductor members
GB1156777A (en) * 1967-06-28 1969-07-02 Westinghouse Brake & Signal Manufacture of Semiconductor Elements.
GB1246022A (en) * 1968-09-14 1971-09-15 Hitachi Ltd Method of manufacturing semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3152939A (en) * 1960-08-12 1964-10-13 Westinghouse Electric Corp Process for preparing semiconductor members
GB1156777A (en) * 1967-06-28 1969-07-02 Westinghouse Brake & Signal Manufacture of Semiconductor Elements.
GB1246022A (en) * 1968-09-14 1971-09-15 Hitachi Ltd Method of manufacturing semiconductor devices

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2363888A1 (en) * 1976-09-03 1978-03-31 Philips Nv PROCESS FOR THE REALIZATION OF A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THUS REALIZED
FR2410366A1 (en) * 1977-11-29 1979-06-22 Radiotechnique Compelec MESA TYPE TRANSISTOR AND METHOD FOR MAKING THIS TRANSISTOR
EP0211609A2 (en) * 1985-08-01 1987-02-25 Unilever Plc Chemically sensitive semiconductor devices and their production
EP0211609A3 (en) * 1985-08-01 1989-02-08 Unilever Plc Chemically sensitive semiconductor devices and their production
US5557149A (en) * 1994-05-11 1996-09-17 Chipscale, Inc. Semiconductor fabrication with contact processing for wrap-around flange interface
US5656547A (en) * 1994-05-11 1997-08-12 Chipscale, Inc. Method for making a leadless surface mounted device with wrap-around flange interface contacts

Also Published As

Publication number Publication date
FR2220877B1 (en) 1976-06-11

Similar Documents

Publication Publication Date Title
FR2455363A1 (en) Continuous production of solar cells - by depositing small grain semiconductor material and recrystallisation
JPS5563840A (en) Semiconductor integrated device
FR2220877A1 (en) PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation
GB1488860A (en) Method of manufacturing a semiconductor device having pressed contacts
GB1129891A (en) Improvements in or relating to methods of manufacturing solid state circuits
KR900702576A (en) Beam leads for Schottky-barrier diodes in ring quad
US3723210A (en) Method of making a semiconductor wafer having concave rim
JPS5346290A (en) Semiconductor device
GB1265458A (en)
JPS56126971A (en) Thin film field effect element
US3532946A (en) Semiconductor element having pnpn structure and bevelled lateral surface
JPS5762535A (en) Semiconductor device
JPS57164560A (en) Manufacture of semiconductor integrated circuit device
JPS5454570A (en) Semiconductor device
JPS5435791A (en) Semiconductor pressure sensor
JPS5457977A (en) Semiconductor device
JPS5775452A (en) Mos capacitor in semiconductor integrated circuit and manufacture thereof
JPS5447493A (en) Semiconductor integrated circuit device and production of the same
JPS6469035A (en) Connecting structure of bump electrode
JPS6472556A (en) Manufacture of photoelectric conversion device
EP0017860A3 (en) Semiconductor switching device and method of making same
GB1201732A (en) Manufacture of semiconductor elements
JPS5775459A (en) Manufacture of semiconductor device
GB1056653A (en) Method of making contact to semiconductor devices
JPS52116180A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse