GB1201732A - Manufacture of semiconductor elements - Google Patents

Manufacture of semiconductor elements

Info

Publication number
GB1201732A
GB1201732A GB2114068A GB2114068A GB1201732A GB 1201732 A GB1201732 A GB 1201732A GB 2114068 A GB2114068 A GB 2114068A GB 2114068 A GB2114068 A GB 2114068A GB 1201732 A GB1201732 A GB 1201732A
Authority
GB
United Kingdom
Prior art keywords
junction
wafer
portions
alloying
junction portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2114068A
Inventor
Howard Arthur Portway
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB2989267A external-priority patent/GB1182820A/en
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB2114068A priority Critical patent/GB1201732A/en
Publication of GB1201732A publication Critical patent/GB1201732A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

1,201,732. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. LIMITED. 24 April, 1969 [3 May, 1968], No. 21140/68. Addition to 1,182,820. Heading H1K. A semi-conductor wafer 1, Fig. 5, is provided with a first PN junction 6 parallel to its major faces and a plurality of PN junction portions 7, each of which comprises a central part parallel to the junction 6 and a peripheral part extending towards the major surface 2 of the wafer, and is then cut into discrete elements by an array of sloping-sided criss-cross cuts positioned such that the peripheral portions of the junction portions 7 emerge on the side walls of the separated elements. The cutting method is as disclosed in Specification 1,182,820. In the process illustrated by Fig. 5 the junction portions 7 are formed by selective diffusion or alloying through a mask into the surface 2. The separated elements may comprise diodes, but a three-electrode PNPN device may be formed by alloying Au/Sb to the upper surface 2 to form a further junction, apertures being left in the alloy material to allow control electrodes to be applied to the zones 31. Fig. 3 illustrates an alternative method of forming the junction portions 7. In this case the first treatment on the wafer comprises selective etching of the upper surface to form an array of recesses 4. The entire surface of the wafer is then subjected to a non-selective diffusion or alloying process to define the flat junction 6 and the junction portions 7, which line the recesses 4. A plug 10 of Au/Sb having therethrough a bore 11 is then placed in each recess and alloyed to the wafer to define a third junction 13 adjacent each recess 4. Separation is then carried out as previously and each element is provided with electrodes.
GB2114068A 1967-06-27 1968-05-03 Manufacture of semiconductor elements Expired GB1201732A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2114068A GB1201732A (en) 1967-06-27 1968-05-03 Manufacture of semiconductor elements

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB2956067 1967-06-27
GB2989267A GB1182820A (en) 1967-06-27 1967-06-27 Manufacture of Semiconductor Elements.
GB2114068A GB1201732A (en) 1967-06-27 1968-05-03 Manufacture of semiconductor elements

Publications (1)

Publication Number Publication Date
GB1201732A true GB1201732A (en) 1970-08-12

Family

ID=33162704

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2114068A Expired GB1201732A (en) 1967-06-27 1968-05-03 Manufacture of semiconductor elements

Country Status (1)

Country Link
GB (1) GB1201732A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2340128A1 (en) * 1973-08-08 1975-02-20 Semikron Gleichrichterbau SEMICONDUCTOR COMPONENT

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2340128A1 (en) * 1973-08-08 1975-02-20 Semikron Gleichrichterbau SEMICONDUCTOR COMPONENT

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Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PLNP Patent lapsed through nonpayment of renewal fees