GB1190672A - Semiconductor Elements and their Manufacture. - Google Patents

Semiconductor Elements and their Manufacture.

Info

Publication number
GB1190672A
GB1190672A GB647668A GB647668A GB1190672A GB 1190672 A GB1190672 A GB 1190672A GB 647668 A GB647668 A GB 647668A GB 647668 A GB647668 A GB 647668A GB 1190672 A GB1190672 A GB 1190672A
Authority
GB
United Kingdom
Prior art keywords
region
wafer
thickness
produced
depletion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB647668A
Inventor
William Brian Glass
Gerald Whiting
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB647668A priority Critical patent/GB1190672A/en
Priority to DE19691905759 priority patent/DE1905759A1/en
Priority to NL6901936A priority patent/NL6901936A/xx
Priority to FR6902786A priority patent/FR2001624A1/en
Publication of GB1190672A publication Critical patent/GB1190672A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09B—EDUCATIONAL OR DEMONSTRATION APPLIANCES; APPLIANCES FOR TEACHING, OR COMMUNICATING WITH, THE BLIND, DEAF OR MUTE; MODELS; PLANETARIA; GLOBES; MAPS; DIAGRAMS
    • G09B5/00—Electrically-operated educational appliances
    • G09B5/06—Electrically-operated educational appliances with both visual and audible presentation of the material to be studied
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Business, Economics & Management (AREA)
  • Educational Administration (AREA)
  • Educational Technology (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Dicing (AREA)

Abstract

1,190,672. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. 7 Feb., 1969 [9 Feb., 1968], No. 6476/68. Heading H1K. Many devices in each of which the distance between the opposite boundaries of a depletion layer where it emerges at the surface of the body is considerably greater than the corresponding distance within the body are produced from a single semi-conductor wafer. The body shown is one severed from an N-type wafer 7 into which a plurality of separate P-type regions 8 had been diffused, these being subsequently linked by a shallower second diffusion of acceptor material. The thickness of the deep part of the P-type region is made to be larger than the extent of the depletion layer at the point of avalanche breakdown, whereas the thickness of the shallow part of the region is made to be smaller than the extent to which the depletion region would otherwise extend; this results in the boundary of the depletion region being of the shape shown by dashed line 11 (rather than being of the shape shown by line 10 if the shallow region were of sufficient thickness). In other embodiments each body may contain one or more (plane) further junctions produced before or after division of the wafer, and each body may be produced with tapered sides (the top being narrower than the bottom) by the use of a knife-edged blade to divide the wafer.
GB647668A 1968-02-09 1968-02-09 Semiconductor Elements and their Manufacture. Expired GB1190672A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB647668A GB1190672A (en) 1968-02-09 1968-02-09 Semiconductor Elements and their Manufacture.
DE19691905759 DE1905759A1 (en) 1968-02-09 1969-02-06 Method of manufacturing semiconductor elements
NL6901936A NL6901936A (en) 1968-02-09 1969-02-07
FR6902786A FR2001624A1 (en) 1968-02-09 1969-02-07 PROCESS FOR THE MANUFACTURING OF ELEMENTS WITH ASYMMETRICAL CONDUCTIVITY

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB647668A GB1190672A (en) 1968-02-09 1968-02-09 Semiconductor Elements and their Manufacture.

Publications (1)

Publication Number Publication Date
GB1190672A true GB1190672A (en) 1970-05-06

Family

ID=9815182

Family Applications (1)

Application Number Title Priority Date Filing Date
GB647668A Expired GB1190672A (en) 1968-02-09 1968-02-09 Semiconductor Elements and their Manufacture.

Country Status (4)

Country Link
DE (1) DE1905759A1 (en)
FR (1) FR2001624A1 (en)
GB (1) GB1190672A (en)
NL (1) NL6901936A (en)

Also Published As

Publication number Publication date
NL6901936A (en) 1969-08-12
DE1905759A1 (en) 1969-09-04
FR2001624A1 (en) 1969-09-26

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees