JPS5666085A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS5666085A
JPS5666085A JP14252079A JP14252079A JPS5666085A JP S5666085 A JPS5666085 A JP S5666085A JP 14252079 A JP14252079 A JP 14252079A JP 14252079 A JP14252079 A JP 14252079A JP S5666085 A JPS5666085 A JP S5666085A
Authority
JP
Japan
Prior art keywords
layer
region
alxga1
elements
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14252079A
Other languages
Japanese (ja)
Other versions
JPS6249998B2 (en
Inventor
Yasuo Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14252079A priority Critical patent/JPS5666085A/en
Publication of JPS5666085A publication Critical patent/JPS5666085A/en
Publication of JPS6249998B2 publication Critical patent/JPS6249998B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To easily perform the chip splitting work for the subject semiconductor laser element by a method wherein, when an ohmic electrode is provided on the surface of the active layer side of the above laser elements, the elements are left only on the laser irradiated section and the other elements are removed in such a manner that they are orthogonally intersecting one another to the (110) direction and a groove penetrating the active layer is provided on the removed section. CONSTITUTION:On the GaAs substrate 1, AlXGa1-XAs layer 2, AlXGa1-YAs active layer 3, AlXGa1-XAs layer 4, and GaAs layer 5 are laminated and grown, and an impurity region 6 which will be penetrated into the layer 4 by a selective diffusion is formed. Then, a mesa etching is performed in such a manner that the circumference of the etching is reaching the surface of the layer 2 and the masa surface is covered by an ohmic metal electrode layer 7. After that, the layer 7 located in the position corresponding to the region 6 is left and the other layer 7 is orthogonally intersected each other to the direction of (110) parallel to a fragmental groove 9 which is orthogonally intersecting with region 6 and a continuous groove 10 parallel to the region 6 are formed on the remaining layer 7. Then, a groove penetrating a layer 3 is formed along the grooves 9 and 10 so that a chip splitting can be performed easily.
JP14252079A 1979-11-02 1979-11-02 Semiconductor laser element Granted JPS5666085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14252079A JPS5666085A (en) 1979-11-02 1979-11-02 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14252079A JPS5666085A (en) 1979-11-02 1979-11-02 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5666085A true JPS5666085A (en) 1981-06-04
JPS6249998B2 JPS6249998B2 (en) 1987-10-22

Family

ID=15317261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14252079A Granted JPS5666085A (en) 1979-11-02 1979-11-02 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5666085A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165735U (en) * 1980-05-12 1981-12-08
JPS56161685A (en) * 1980-05-16 1981-12-12 Fujitsu Ltd Manufacture of semiconductor laser
JPH0489867U (en) * 1990-12-14 1992-08-05

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105790A (en) * 1976-03-01 1977-09-05 Nec Corp Injection type semiconductor laser element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52105790A (en) * 1976-03-01 1977-09-05 Nec Corp Injection type semiconductor laser element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165735U (en) * 1980-05-12 1981-12-08
JPS56161685A (en) * 1980-05-16 1981-12-12 Fujitsu Ltd Manufacture of semiconductor laser
JPH0156552B2 (en) * 1980-05-16 1989-11-30 Fujitsu Ltd
JPH0489867U (en) * 1990-12-14 1992-08-05

Also Published As

Publication number Publication date
JPS6249998B2 (en) 1987-10-22

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