JPS586309B2 - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS586309B2 JPS586309B2 JP55044966A JP4496680A JPS586309B2 JP S586309 B2 JPS586309 B2 JP S586309B2 JP 55044966 A JP55044966 A JP 55044966A JP 4496680 A JP4496680 A JP 4496680A JP S586309 B2 JPS586309 B2 JP S586309B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- semiconductor
- glass protective
- semiconductor wafer
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Description
【発明の詳細な説明】
本発明は半導体ウエーハに形成された複数個の半導体素
子を、特性に悪影響を及ぼさないように分割できるよう
にした半導体装置の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device that allows a plurality of semiconductor elements formed on a semiconductor wafer to be divided without adversely affecting the characteristics.
一般に、半導体素子は、一枚の半導体ウエーハに、異な
る導電型の不純物を順次拡散して、複数個の半導体素子
を形成し、各半導体素子の隣接する表面側の界面に、ダ
イヤモンドカッタ又はレーザ光で切込みを設け、半導体
ウエーハをゴムローラを通すことにより、上記切込みよ
り個々に分割して得ている。Generally, semiconductor devices are manufactured by sequentially diffusing impurities of different conductivity types into a single semiconductor wafer to form a plurality of semiconductor devices, and applying a diamond cutter or laser beam to the interface on the adjacent surface side of each semiconductor device. The semiconductor wafer is individually divided through the notches by passing the semiconductor wafer through a rubber roller.
而して、ある種の半導体素子、例えばサイリスタ素子に
おいては、切込みを設ける前に、各半導体素子の隣接す
る界面に、その表裏両面よりエッチングしてメサ溝を形
成するとともに、これら各メサ溝にガラス保護膜を形成
し、しかる後に表面側の各メサ溝のガラス保護膜に半導
体ウエーハをも切込む切込みを設けるようにしているが
、このような半導体ウエーハを、ゴムローラを通して個
個のサイリスク素子に分割する際、しばしば裏面側のガ
ラス保護膜に亀裂が生じて、ガラス保護膜が剥離し、メ
サ溝が露出して特性が劣化するということがあった。Therefore, in some types of semiconductor devices, such as thyristor devices, before making cuts, mesa grooves are formed by etching from both the front and back surfaces of adjacent interfaces of each semiconductor device, and each of these mesa grooves is etched. A glass protective film is formed, and then a cut is made in the glass protective film of each mesa groove on the front side to cut into the semiconductor wafer, and such a semiconductor wafer is passed through a rubber roller into individual silice elements. When dividing, cracks often occur in the glass protective film on the back side, causing the glass protective film to peel off, exposing mesa grooves and deteriorating properties.
本発明は、上記点を改良するために提案されたもので、
ガラス保護膜への切込みを、表裏両面のメサ溝に形成す
ることを特徴とする。The present invention was proposed to improve the above points,
It is characterized in that cuts in the glass protective film are formed in mesa grooves on both the front and back surfaces.
以下、本発明の一実施例を図面により説明すると、図に
おいて、１１，１２，１３はＮ型シリコンウエーハの表
裏両面よりＰ型不純物を拡散した後、表面のみよりＮ型
不純物を拡散して形成したＮＰＮＰ型の４層よりなるサ
イリスク素子、２１，２２．２３は各サイリスク素子の
隣接する界面に、エッチングすることにより形成した表
面側のメサ溝、３１，３２，３３は上記メサ溝２１，２
２，２３と夫々対応させて形成した裏面側メサ溝、４１
，４２，４３，５１，５２，５３は表裏両面の各メサ溝
上に形成したガラス保護膜、６１，６２，６３，７１，
７２，７３は表裏両面の各メサ溝に、ダイヤモンドカツ
タ又はレーザ光により、ガラス保護膜をも切込んで設け
た切込みである。Hereinafter, one embodiment of the present invention will be explained with reference to the drawings. In the drawings, 11, 12, and 13 are formed by diffusing P-type impurities from both the front and back surfaces of an N-type silicon wafer, and then diffusing N-type impurities only from the front surface. 21, 22, 23 are mesa grooves on the surface side formed by etching on the adjacent interfaces of each NPNP type SiRISK element, 31, 32, 33 are the above mesa grooves 21, 2.
Mesa grooves 41 on the back side formed corresponding to 2 and 23, respectively.
, 42, 43, 51, 52, 53 are glass protective films formed on each mesa groove on both the front and back surfaces; 61, 62, 63, 71,
Reference numerals 72 and 73 indicate cuts made by cutting the glass protective film into each mesa groove on both the front and back sides using a diamond cutter or laser beam.
尚、これら切込みは、対応する表裏メサ溝で、対応する
ように設けた方がよい。Incidentally, it is preferable that these cuts are provided in corresponding mesa grooves on the front and back sides.
又裏面側の切込みは必ずしも半導体ウエーハまで達して
いなくともよい。Furthermore, the cuts on the back side do not necessarily have to reach the semiconductor wafer.
本発明は以上のような構成よりなる半導体ウエーハを、
ゴムローラ等を通すことにより、機械的に個々に分割す
る際、分割が表裏両面の切込みより開始され、ガラス保
護膜特に裏面側のガラス保護膜に亀裂が生じるのを防止
することができ、ガ？ス保護膜の亀裂に基づく特性上の
不利益が一掃される。The present invention provides a semiconductor wafer having the above configuration,
By passing it through a rubber roller, etc., when mechanically dividing the glass into individual pieces, the division starts from the incisions on both the front and back sides, which prevents cracks from occurring in the glass protective film, especially the glass protective film on the back side. Characteristic disadvantages due to cracks in the protective film are eliminated.
図は本発明に係る半導体装置の製造方法に供する半導体
ウエーハの一実施例の断面図である。
１１，１２，１３……半導体素子、２１ ，２２ ２
３，３１，３２，３３……メサ溝、４、，４，４３，５
１，５２，５３……ガラス保護膜、６１，６２，６３，
７１，７２．７３……切込み。The figure is a cross-sectional view of one embodiment of a semiconductor wafer used in the method of manufacturing a semiconductor device according to the present invention. 11, 12, 13... semiconductor element, 21 , 22 2
3, 31, 32, 33...Mesa groove, 4, 4, 43, 5
1, 52, 53...Glass protective film, 61, 62, 63,
71, 72.73...notch.
Claims (1)
程と、各半導体素子の隣接する界面に、その表裏両面よ
りエッチングしてメサ溝を形成する工程と、各メサ溝に
ガラス保護膜を形成する工程と、表裏両面の各メサ溝の
ガラス保護膜に切込みを設ける工程と、この半導体ウエ
ーハを機械的に分割する工程表を含む半導体装置の製造
方法。1. A process of forming a plurality of semiconductor elements on a semiconductor wafer, a process of etching the adjacent interfaces of each semiconductor element from both the front and back surfaces to form mesa grooves, and a process of forming a glass protective film in each mesa groove. A method for manufacturing a semiconductor device, comprising: a step of making cuts in the glass protective film of each mesa groove on both the front and back surfaces; and a process chart of mechanically dividing the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55044966A JPS586309B2 (en) | 1980-04-03 | 1980-04-03 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55044966A JPS586309B2 (en) | 1980-04-03 | 1980-04-03 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55156336A JPS55156336A (en) | 1980-12-05 |
| JPS586309B2 true JPS586309B2 (en) | 1983-02-03 |
Family
ID=12706215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55044966A Expired JPS586309B2 (en) | 1980-04-03 | 1980-04-03 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS586309B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5992644U (en) * | 1982-12-13 | 1984-06-23 | 有限会社ミカサ技研 | flower pot |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4579489B2 (en) * | 2002-09-02 | 2010-11-10 | 新光電気工業株式会社 | Semiconductor chip manufacturing method and semiconductor chip |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5054281A (en) * | 1973-09-11 | 1975-05-13 |
-
1980
- 1980-04-03 JP JP55044966A patent/JPS586309B2/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5054281A (en) * | 1973-09-11 | 1975-05-13 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5992644U (en) * | 1982-12-13 | 1984-06-23 | 有限会社ミカサ技研 | flower pot |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55156336A (en) | 1980-12-05 |
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