JPS57199286A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS57199286A
JPS57199286A JP56083879A JP8387981A JPS57199286A JP S57199286 A JPS57199286 A JP S57199286A JP 56083879 A JP56083879 A JP 56083879A JP 8387981 A JP8387981 A JP 8387981A JP S57199286 A JPS57199286 A JP S57199286A
Authority
JP
Japan
Prior art keywords
electrode
phs
resonator
ohmic electrode
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56083879A
Other languages
Japanese (ja)
Inventor
Seiji Iida
Naoto Mogi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56083879A priority Critical patent/JPS57199286A/en
Publication of JPS57199286A publication Critical patent/JPS57199286A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

Abstract

PURPOSE:To reduce the laser oscilating threshold values preventing the laser beam from being reflected from the PHS electrode surface by a method wherein the resonator side flat part of the PHS (plated heat sink) electrode is extended longer than the resonator while the end of PHS electrode is formed virtually into the rack type. CONSTITUTION:The multilayered epitaxial layer 22 is provided on the first surface of the GaAs substrate 21 and the ohmic electrode 23 is provided on the second surface of said substrate 21 while the p side ohmic electrode 24 is provided on said layer 22 and the PHS electrode is provided on the p side ohmic electrode. In the crystal end to be the resonator comprising the GaAs substrate 21 and the p type ohmic electrode 24, assuming the length produced by the crystal etching and the length of the resonator flat part of the PHS electrode respectively to be A and B, they must be A<=B. The PHS electrode is formed virtually into the rack type provided with an angle not getting into the region of the laser beam emitting from the resonator.
JP56083879A 1981-06-02 1981-06-02 Semiconductor laser device Pending JPS57199286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56083879A JPS57199286A (en) 1981-06-02 1981-06-02 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56083879A JPS57199286A (en) 1981-06-02 1981-06-02 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS57199286A true JPS57199286A (en) 1982-12-07

Family

ID=13814936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56083879A Pending JPS57199286A (en) 1981-06-02 1981-06-02 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS57199286A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177489A (en) * 1988-12-28 1990-07-10 Res Dev Corp Of Japan Manufacture of surface emitting type semiconductor laser device
US5608749A (en) * 1992-09-16 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
CN109863837A (en) * 2016-08-26 2019-06-07 恩耐公司 Laser Power entry module

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177489A (en) * 1988-12-28 1990-07-10 Res Dev Corp Of Japan Manufacture of surface emitting type semiconductor laser device
US5608749A (en) * 1992-09-16 1997-03-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser diode and semiconductor laser diode array including plated heat sink (PHS) electrode
CN109863837A (en) * 2016-08-26 2019-06-07 恩耐公司 Laser Power entry module
US11027366B2 (en) 2016-08-26 2021-06-08 Nlight, Inc. Laser power distribution module
CN109863837B (en) * 2016-08-26 2022-07-08 恩耐公司 Laser distribution module

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