FR2410363A1 - Barrier formation in semiconductor - by cutting slot in semiconductor and then diffusing two layers simultaneously on its either side - Google Patents

Barrier formation in semiconductor - by cutting slot in semiconductor and then diffusing two layers simultaneously on its either side

Info

Publication number
FR2410363A1
FR2410363A1 FR7735733A FR7735733A FR2410363A1 FR 2410363 A1 FR2410363 A1 FR 2410363A1 FR 7735733 A FR7735733 A FR 7735733A FR 7735733 A FR7735733 A FR 7735733A FR 2410363 A1 FR2410363 A1 FR 2410363A1
Authority
FR
France
Prior art keywords
semiconductor
slot
diffusing
diffusion
barrier formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7735733A
Other languages
French (fr)
Other versions
FR2410363B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SILICIUM SEMICONDUCTEUR SSC
Original Assignee
SILICIUM SEMICONDUCTEUR SSC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SILICIUM SEMICONDUCTEUR SSC filed Critical SILICIUM SEMICONDUCTEUR SSC
Priority to FR7735733A priority Critical patent/FR2410363A1/en
Publication of FR2410363A1 publication Critical patent/FR2410363A1/en
Application granted granted Critical
Publication of FR2410363B1 publication Critical patent/FR2410363B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0646—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)

Abstract

The barrier formation in a semiconductor provides isolation without the disadvantages of deep diffusion. Central areas are isolated from peripheral regions preventing arcing to ground. Formation of the barrier is by cutting a slot (20) in the semiconductor. Two layers (2, 3, 21) are then simultaneously diffused either side of the semiconductor and around the slot itself. The slot is cut, preferably with a diamond saw, to a depth of about one hundred microns, the diffusion depth being of the order of seventy microns. diffusion is followed by an annealing stage and cutting into basic chips.
FR7735733A 1977-11-28 1977-11-28 Barrier formation in semiconductor - by cutting slot in semiconductor and then diffusing two layers simultaneously on its either side Granted FR2410363A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7735733A FR2410363A1 (en) 1977-11-28 1977-11-28 Barrier formation in semiconductor - by cutting slot in semiconductor and then diffusing two layers simultaneously on its either side

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7735733A FR2410363A1 (en) 1977-11-28 1977-11-28 Barrier formation in semiconductor - by cutting slot in semiconductor and then diffusing two layers simultaneously on its either side

Publications (2)

Publication Number Publication Date
FR2410363A1 true FR2410363A1 (en) 1979-06-22
FR2410363B1 FR2410363B1 (en) 1982-02-05

Family

ID=9198142

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7735733A Granted FR2410363A1 (en) 1977-11-28 1977-11-28 Barrier formation in semiconductor - by cutting slot in semiconductor and then diffusing two layers simultaneously on its either side

Country Status (1)

Country Link
FR (1) FR2410363A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0063416A1 (en) * 1981-03-27 1982-10-27 AEI Semiconductors Limited Semiconductor device comprising a localised doped region
FR2538616A1 (en) * 1982-12-28 1984-06-29 Thomson Csf Method of collective manufacture of microwave frequency diodes with incorporated encapsulation and diodes thus obtained.
EP0791962A1 (en) * 1994-08-26 1997-08-27 Jury Alexeevich Evseev Semiconductor rectifier module
FR2785089A1 (en) * 1998-10-23 2000-04-28 St Microelectronics Sa CONSTRUCTION OF INSULATION WALL
EP1111684A1 (en) * 1999-12-24 2001-06-27 STMicroelectronics SA Process for making vertical power components

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2288388A1 (en) * 1974-10-16 1976-05-14 Silec Semi Conducteurs Forming assembly of semi-conductor elements - by producing diffusion zones and filled grooves on opposite structure faces
FR2359507A1 (en) * 1976-07-24 1978-02-17 Semikron Gleichrichterbau MANUFACTURING OF SEMICONDUCTOR COMPONENTS WITH LARGE BLOCKING CAPACITY

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2288388A1 (en) * 1974-10-16 1976-05-14 Silec Semi Conducteurs Forming assembly of semi-conductor elements - by producing diffusion zones and filled grooves on opposite structure faces
FR2359507A1 (en) * 1976-07-24 1978-02-17 Semikron Gleichrichterbau MANUFACTURING OF SEMICONDUCTOR COMPONENTS WITH LARGE BLOCKING CAPACITY

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0063416A1 (en) * 1981-03-27 1982-10-27 AEI Semiconductors Limited Semiconductor device comprising a localised doped region
FR2538616A1 (en) * 1982-12-28 1984-06-29 Thomson Csf Method of collective manufacture of microwave frequency diodes with incorporated encapsulation and diodes thus obtained.
EP0791962A1 (en) * 1994-08-26 1997-08-27 Jury Alexeevich Evseev Semiconductor rectifier module
EP0791962A4 (en) * 1994-08-26 1999-03-24 Jury Alexeevich Evseev Semiconductor rectifier module
FR2785089A1 (en) * 1998-10-23 2000-04-28 St Microelectronics Sa CONSTRUCTION OF INSULATION WALL
EP0997931A1 (en) * 1998-10-23 2000-05-03 STMicroelectronics SA Process for forming an isolating wall in a semiconductor substrate
US6759726B1 (en) 1998-10-23 2004-07-06 Stmicroelectronics S.A. Formation of an isolating wall
EP1111684A1 (en) * 1999-12-24 2001-06-27 STMicroelectronics SA Process for making vertical power components
FR2803101A1 (en) * 1999-12-24 2001-06-29 St Microelectronics Sa PROCESS FOR MANUFACTURING VERTICAL POWER COMPONENTS
US6579782B2 (en) 1999-12-24 2003-06-17 Stmicroelectronics S.A. Vertical power component manufacturing method
US6784465B2 (en) 1999-12-24 2004-08-31 Stmicroelectronics S.A. Vertical power component manufacturing method

Also Published As

Publication number Publication date
FR2410363B1 (en) 1982-02-05

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Legal Events

Date Code Title Description
ST Notification of lapse