JPS544079A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS544079A
JPS544079A JP6850177A JP6850177A JPS544079A JP S544079 A JPS544079 A JP S544079A JP 6850177 A JP6850177 A JP 6850177A JP 6850177 A JP6850177 A JP 6850177A JP S544079 A JPS544079 A JP S544079A
Authority
JP
Japan
Prior art keywords
semiconductor device
junction surface
intersect
drain
decrease
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6850177A
Other languages
Japanese (ja)
Other versions
JPS6040717B2 (en
Inventor
Hidemi Takakuwa
Akiyasu Ishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP52068501A priority Critical patent/JPS6040717B2/en
Publication of JPS544079A publication Critical patent/JPS544079A/en
Publication of JPS6040717B2 publication Critical patent/JPS6040717B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

Abstract

PURPOSE:To prevent the decrease in dielectric strength between the source and the drain, by forming a V-shaped groove so that it intersect the junction surface orthogonally with the curved part on the PN junction surface of double diffusion region.
JP52068501A 1977-06-10 1977-06-10 semiconductor equipment Expired JPS6040717B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52068501A JPS6040717B2 (en) 1977-06-10 1977-06-10 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52068501A JPS6040717B2 (en) 1977-06-10 1977-06-10 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS544079A true JPS544079A (en) 1979-01-12
JPS6040717B2 JPS6040717B2 (en) 1985-09-12

Family

ID=13375502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52068501A Expired JPS6040717B2 (en) 1977-06-10 1977-06-10 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6040717B2 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662365A (en) * 1979-10-26 1981-05-28 Nippon Telegr & Teleph Corp <Ntt> High voltage-proof mos field effect transistor
JPS5718365A (en) * 1980-07-08 1982-01-30 Matsushita Electronics Corp Semiconductor device and manufacture thereof
JPS5832464A (en) * 1981-08-20 1983-02-25 Nec Corp Vertical type tetrode mosfet
JPS5868044U (en) * 1981-10-30 1983-05-09 日産自動車株式会社 MOS semiconductor device
US4550332A (en) * 1980-10-30 1985-10-29 Veb Zentrum Fur Forschung Und Technologie Mikroelektronik Gate controlled semiconductor device
US4851889A (en) * 1986-12-03 1989-07-25 Fuji Electric Co., Ltd. Insulated gate field effect transistor with vertical channel
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
JP2000332246A (en) * 1999-05-10 2000-11-30 Intersil Corp Process of forming mos gate device having self-aligned trench

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140114U (en) * 1986-02-26 1987-09-04

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662365A (en) * 1979-10-26 1981-05-28 Nippon Telegr & Teleph Corp <Ntt> High voltage-proof mos field effect transistor
JPS5718365A (en) * 1980-07-08 1982-01-30 Matsushita Electronics Corp Semiconductor device and manufacture thereof
JPH0216022B2 (en) * 1980-07-08 1990-04-13 Matsushita Electronics Corp
US4550332A (en) * 1980-10-30 1985-10-29 Veb Zentrum Fur Forschung Und Technologie Mikroelektronik Gate controlled semiconductor device
JPS5832464A (en) * 1981-08-20 1983-02-25 Nec Corp Vertical type tetrode mosfet
JPS5868044U (en) * 1981-10-30 1983-05-09 日産自動車株式会社 MOS semiconductor device
US4851889A (en) * 1986-12-03 1989-07-25 Fuji Electric Co., Ltd. Insulated gate field effect transistor with vertical channel
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
JP2000332246A (en) * 1999-05-10 2000-11-30 Intersil Corp Process of forming mos gate device having self-aligned trench

Also Published As

Publication number Publication date
JPS6040717B2 (en) 1985-09-12

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