FR2436502A1 - Transistors bipolaires a heterojonction de structure plane et leur procede de fabrication - Google Patents

Transistors bipolaires a heterojonction de structure plane et leur procede de fabrication

Info

Publication number
FR2436502A1
FR2436502A1 FR7826069A FR7826069A FR2436502A1 FR 2436502 A1 FR2436502 A1 FR 2436502A1 FR 7826069 A FR7826069 A FR 7826069A FR 7826069 A FR7826069 A FR 7826069A FR 2436502 A1 FR2436502 A1 FR 2436502A1
Authority
FR
France
Prior art keywords
esp
bipolar transistor
plane structure
base
types
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7826069A
Other languages
English (en)
Other versions
FR2436502B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR7826069A priority Critical patent/FR2436502A1/fr
Publication of FR2436502A1 publication Critical patent/FR2436502A1/fr
Application granted granted Critical
Publication of FR2436502B1 publication Critical patent/FR2436502B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

a. Transistor bipolaire à hétérojonction émetteur-base, en structure plane. b. Il comprend un substrat, une couche de collecteur, une couche de base et une couche d'émetteur, cette dernière étant en un matériau formant avec la couche de base une hétérojonction, et il est caractérisé en ce que l'électrode de base est déposée sur la couche d'émetteur et est reliée à la couche de base par un puits diffusé à fort dopage à travers la couche d'émetteur et sous l'électrode de base, du même type de conductivité que la couche de base. c. Transistors à haute fréquence.
FR7826069A 1978-09-12 1978-09-12 Transistors bipolaires a heterojonction de structure plane et leur procede de fabrication Granted FR2436502A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7826069A FR2436502A1 (fr) 1978-09-12 1978-09-12 Transistors bipolaires a heterojonction de structure plane et leur procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7826069A FR2436502A1 (fr) 1978-09-12 1978-09-12 Transistors bipolaires a heterojonction de structure plane et leur procede de fabrication

Publications (2)

Publication Number Publication Date
FR2436502A1 true FR2436502A1 (fr) 1980-04-11
FR2436502B1 FR2436502B1 (fr) 1982-05-07

Family

ID=9212510

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7826069A Granted FR2436502A1 (fr) 1978-09-12 1978-09-12 Transistors bipolaires a heterojonction de structure plane et leur procede de fabrication

Country Status (1)

Country Link
FR (1) FR2436502A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0130774A1 (fr) * 1983-06-30 1985-01-09 Fujitsu Limited Procédé pour la fabrication des transistors bipolaires
EP0141892A2 (fr) * 1983-11-15 1985-05-22 Refining Energy Services, Inc. Dispositif semi-conducteur à effet de recombination de surface
US4617724A (en) * 1983-06-30 1986-10-21 Fujitsu Limited Process for fabricating heterojunction bipolar transistor with low base resistance
FR2604299A1 (fr) * 1986-09-23 1988-03-25 Palmier Jean Francois Transistor bipolaire comportant un emetteur multicouche assurant le confinement des trous

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1449487A (fr) * 1964-10-13 1966-03-18 Ibm Structure de transistor améliorée
DE2504273A1 (de) * 1975-02-01 1976-08-05 Licentia Gmbh Verfahren zum herstellen eines transistors

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1449487A (fr) * 1964-10-13 1966-03-18 Ibm Structure de transistor améliorée
DE2504273A1 (de) * 1975-02-01 1976-08-05 Licentia Gmbh Verfahren zum herstellen eines transistors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0130774A1 (fr) * 1983-06-30 1985-01-09 Fujitsu Limited Procédé pour la fabrication des transistors bipolaires
US4617724A (en) * 1983-06-30 1986-10-21 Fujitsu Limited Process for fabricating heterojunction bipolar transistor with low base resistance
EP0141892A2 (fr) * 1983-11-15 1985-05-22 Refining Energy Services, Inc. Dispositif semi-conducteur à effet de recombination de surface
EP0141892A3 (fr) * 1983-11-15 1987-10-28 Refining Energy Services, Inc. Dispositif semi-conducteur à effet de recombination de surface
FR2604299A1 (fr) * 1986-09-23 1988-03-25 Palmier Jean Francois Transistor bipolaire comportant un emetteur multicouche assurant le confinement des trous

Also Published As

Publication number Publication date
FR2436502B1 (fr) 1982-05-07

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Legal Events

Date Code Title Description
TP Transmission of property
TP Transmission of property
ST Notification of lapse