FR2454703A1 - Transistor a effet de champ et procede de fabrication - Google Patents

Transistor a effet de champ et procede de fabrication

Info

Publication number
FR2454703A1
FR2454703A1 FR8008805A FR8008805A FR2454703A1 FR 2454703 A1 FR2454703 A1 FR 2454703A1 FR 8008805 A FR8008805 A FR 8008805A FR 8008805 A FR8008805 A FR 8008805A FR 2454703 A1 FR2454703 A1 FR 2454703A1
Authority
FR
France
Prior art keywords
substrate
gate regions
source
high resistivity
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8008805A
Other languages
English (en)
Other versions
FR2454703B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4956179A external-priority patent/JPS55141760A/ja
Priority claimed from JP15345179A external-priority patent/JPS5676576A/ja
Priority claimed from JP15345079A external-priority patent/JPS5676575A/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2454703A1 publication Critical patent/FR2454703A1/fr
Application granted granted Critical
Publication of FR2454703B1 publication Critical patent/FR2454703B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

L'INVENTION CONCERNE UN TRANSISTOR A EFFET DE CHAMP. SELON L'INVENTION, IL COMPREND UNE COUCHE SEMI-ISOLANTE 11 ET UN SEMI-CONDUCTEUR COMPOSE; UNE COUCHE DE SEMI-CONDUCTEUR 12 D'UN PREMIER TYPE DE CONDUCTIVITE, SUR LA COUCHE SEMI-ISOLANTE; DES REGIONS DE PORTE DE SEMI-CONDUCTEUR ESPACEES 15A-15D D'UN SECOND TYPE DE CONDUCTIVITE, S'ETENDANT JUSQU'A LA COUCHE SEMI-ISOLANTE A PARTIR DE LA SURFACE PRINCIPALE DE LA COUCHE DE SEMI-CONDUCTEUR; DES ELECTRODES DE SOURCE ET DE DRAIN 13 ET 14 SUR DES COTES OPPOSES DES REGIONS DE PORTE DE SEMI-CONDUCTEUR, EN CONTACT OHMIQUE AVEC LA COUCHE DE SEMI-CONDUCTEUR; ET DES ELECTRODES DE PORTE 17A-17D EN CONTACT OHMIQUE AVEC LES REGIONS DE PORTE DE SEMI-CONDUCTEUR ET ELECTRIQUEMENT ISOLEES DE REGIONS DE LA COUCHE 12 AUTRES QUE LES REGIONS DE PORTE, LE POURTOUR DU TRANSISTOR RESULTANT ETANT EN CONTACT AVEC AU MOINS DEUX DES REGIONS DE PORTE DE SEMI-CONDUCTEUR. L'INVENTION S'APPLIQUE NOTAMMENT A L'INDUSTRIE ELECTRONIQUE.
FR8008805A 1979-04-21 1980-04-18 Transistor a effet de champ et procede de fabrication Expired FR2454703B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4956179A JPS55141760A (en) 1979-04-21 1979-04-21 Field effect transistor
JP15345179A JPS5676576A (en) 1979-11-26 1979-11-26 Semiconductor device and manufacture thereof
JP15345079A JPS5676575A (en) 1979-11-26 1979-11-26 Manufacture of junction type field effect semiconductor device

Publications (2)

Publication Number Publication Date
FR2454703A1 true FR2454703A1 (fr) 1980-11-14
FR2454703B1 FR2454703B1 (fr) 1985-11-15

Family

ID=27293676

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8008805A Expired FR2454703B1 (fr) 1979-04-21 1980-04-18 Transistor a effet de champ et procede de fabrication

Country Status (1)

Country Link
FR (1) FR2454703B1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux
EP0167811A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant une rangée scindée
US4633281A (en) * 1984-06-08 1986-12-30 Eaton Corporation Dual stack power JFET with buried field shaping depletion regions
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions
EP0729188A2 (fr) * 1995-02-21 1996-08-28 Nec Corporation Dispositif semi-conducteur avec transistors à effet de champ à junction
RU2660296C1 (ru) * 2017-02-20 2018-07-05 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB936833A (en) * 1959-03-26 1963-09-11 Ass Elect Ind Improvements relating to the production of p.n. junctions in semi-conductor material
US3381189A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co Mesa multi-channel field-effect triode
GB1121653A (en) * 1964-07-31 1968-07-31 Nat Res Dev Field effect transistors
FR2076118A7 (fr) * 1970-01-15 1971-10-15 Licentia Gmbh
US3681220A (en) * 1969-04-03 1972-08-01 Kev Electronics Corp Method of making a field effect transistor
DE2444489A1 (de) * 1974-09-18 1976-04-01 Heinz Prof Dr Rer Nat Beneking Halbleiteranordnung und verfahren zu ihrer herstellung
US4033788A (en) * 1973-12-10 1977-07-05 Hughes Aircraft Company Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB936833A (en) * 1959-03-26 1963-09-11 Ass Elect Ind Improvements relating to the production of p.n. junctions in semi-conductor material
GB1121653A (en) * 1964-07-31 1968-07-31 Nat Res Dev Field effect transistors
US3381189A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co Mesa multi-channel field-effect triode
US3681220A (en) * 1969-04-03 1972-08-01 Kev Electronics Corp Method of making a field effect transistor
FR2076118A7 (fr) * 1970-01-15 1971-10-15 Licentia Gmbh
US4033788A (en) * 1973-12-10 1977-07-05 Hughes Aircraft Company Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
DE2444489A1 (de) * 1974-09-18 1976-04-01 Heinz Prof Dr Rer Nat Beneking Halbleiteranordnung und verfahren zu ihrer herstellung
DE2801085A1 (de) * 1977-01-11 1978-07-13 Zaidan Hojin Handotai Kenkyu Statischer induktionstransistor

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501913A1 (fr) * 1981-03-10 1982-09-17 Thomson Csf Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor
EP0061376A1 (fr) * 1981-03-10 1982-09-29 Thomson-Csf Transistor à effet de champ de type planar comportant des électrodes à puits métallisés, et procédé de fabrication de ce transistor
EP0167810A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant plusieurs pincements latéraux
EP0167811A1 (fr) * 1984-06-08 1986-01-15 Eaton Corporation JFET de puissance comportant une rangée scindée
US4633281A (en) * 1984-06-08 1986-12-30 Eaton Corporation Dual stack power JFET with buried field shaping depletion regions
US4635084A (en) * 1984-06-08 1987-01-06 Eaton Corporation Split row power JFET
US4670764A (en) * 1984-06-08 1987-06-02 Eaton Corporation Multi-channel power JFET with buried field shaping regions
EP0729188A2 (fr) * 1995-02-21 1996-08-28 Nec Corporation Dispositif semi-conducteur avec transistors à effet de champ à junction
EP0729188A3 (fr) * 1995-02-21 1997-09-17 Nec Corp Dispositif semi-conducteur avec transistors à effet de champ à junction
US6020607A (en) * 1995-02-21 2000-02-01 Nec Corporation Semiconductor device having junction field effect transistors
RU2660296C1 (ru) * 2017-02-20 2018-07-05 Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) Способ изготовления полупроводникового прибора

Also Published As

Publication number Publication date
FR2454703B1 (fr) 1985-11-15

Similar Documents

Publication Publication Date Title
CA1125924A (fr) Contacts ohmiques non allies pour contact avec semiconducteurs de type n des groupes iii(a)-v(a)
US4829347A (en) Process for making indium gallium arsenide devices
US4849368A (en) Method of producing a two-dimensional electron gas semiconductor device
US4583105A (en) Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage
US5214298A (en) Complementary heterostructure field effect transistors
FR2454703A1 (fr) Transistor a effet de champ et procede de fabrication
EP0286428A3 (fr) Procédé pour la fabrication d'un transistor à effet de champ à jonction
JPS57112079A (en) Field-effect semiconductor device
US4866491A (en) Heterojunction field effect transistor having gate threshold voltage capability
US3453504A (en) Unipolar transistor
JPS5646562A (en) Semiconductor device
EP0063139A1 (fr) Procede de fabrication d'un transistor bipolaire iii-v par implantation selective d'ions et dispositif obtenu selon ce procede
JPS55117281A (en) 3[5 group compound semiconductor hetero structure mosfet
JPH03145139A (ja) 電界効果トランジスタとその製造方法
US4824804A (en) Method of making vertical enhancement-mode group III-V compound MISFETS
JPS57208174A (en) Semiconductor device
JPS57193067A (en) Semiconductor device
Feng et al. GaAs MESFET's made by ion implantation into MOCVD buffer layers
JPS59222966A (ja) 半導体装置
JP2503594B2 (ja) 半導体集積装置及びその製造方法
EP0278110B1 (fr) Transistor à effet de champ à hétérojonction
KR940003096A (ko) 고전자 이동도 트랜지스터 및 그의 제조방법
JPS6367342B2 (fr)
JPS6423571A (en) Semiconductor element
JPH05102192A (ja) 電界効果トランジスタ

Legal Events

Date Code Title Description
TP Transmission of property
CA Change of address