FR2076118A7 - - Google Patents

Info

Publication number
FR2076118A7
FR2076118A7 FR7046908A FR7046908A FR2076118A7 FR 2076118 A7 FR2076118 A7 FR 2076118A7 FR 7046908 A FR7046908 A FR 7046908A FR 7046908 A FR7046908 A FR 7046908A FR 2076118 A7 FR2076118 A7 FR 2076118A7
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7046908A
Other versions
FR2076118B3 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Application granted granted Critical
Publication of FR2076118A7 publication Critical patent/FR2076118A7/fr
Publication of FR2076118B3 publication Critical patent/FR2076118B3/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
FR707046908A 1970-01-15 1970-12-28 Expired FR2076118B3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2001584A DE2001584C3 (de) 1970-01-15 1970-01-15 Sperrschicht-Feldeffekttransistor

Publications (2)

Publication Number Publication Date
FR2076118A7 true FR2076118A7 (fr) 1971-10-15
FR2076118B3 FR2076118B3 (fr) 1973-08-10

Family

ID=5759651

Family Applications (1)

Application Number Title Priority Date Filing Date
FR707046908A Expired FR2076118B3 (fr) 1970-01-15 1970-12-28

Country Status (4)

Country Link
US (1) US3693055A (fr)
DE (1) DE2001584C3 (fr)
FR (1) FR2076118B3 (fr)
GB (1) GB1335037A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454703A1 (fr) * 1979-04-21 1980-11-14 Nippon Telegraph & Telephone Transistor a effet de champ et procede de fabrication

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5217720B1 (fr) * 1971-07-31 1977-05-17
USRE29971E (en) * 1971-07-31 1979-04-17 Zaidan Hojin Hondotai Kenkyn Shinkokai Field effect semiconductor device having an unsaturated triode vacuum tube characteristic
JPS50122183A (fr) * 1974-03-13 1975-09-25
US4240089A (en) * 1978-10-18 1980-12-16 General Electric Company Linearized charge transfer devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316131A (en) * 1963-08-15 1967-04-25 Texas Instruments Inc Method of producing a field-effect transistor
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454703A1 (fr) * 1979-04-21 1980-11-14 Nippon Telegraph & Telephone Transistor a effet de champ et procede de fabrication

Also Published As

Publication number Publication date
FR2076118B3 (fr) 1973-08-10
GB1335037A (en) 1973-10-24
DE2001584B2 (de) 1974-06-20
DE2001584C3 (de) 1975-02-13
DE2001584A1 (de) 1971-07-29
US3693055A (en) 1972-09-19

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Legal Events

Date Code Title Description
ST Notification of lapse