JPS6367342B2 - - Google Patents
Info
- Publication number
- JPS6367342B2 JPS6367342B2 JP4531183A JP4531183A JPS6367342B2 JP S6367342 B2 JPS6367342 B2 JP S6367342B2 JP 4531183 A JP4531183 A JP 4531183A JP 4531183 A JP4531183 A JP 4531183A JP S6367342 B2 JPS6367342 B2 JP S6367342B2
- Authority
- JP
- Japan
- Prior art keywords
- normally
- forming
- semiconductor layer
- type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 125000005842 heteroatom Chemical group 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4531183A JPS59172272A (ja) | 1983-03-19 | 1983-03-19 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4531183A JPS59172272A (ja) | 1983-03-19 | 1983-03-19 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59172272A JPS59172272A (ja) | 1984-09-28 |
JPS6367342B2 true JPS6367342B2 (fr) | 1988-12-26 |
Family
ID=12715760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4531183A Granted JPS59172272A (ja) | 1983-03-19 | 1983-03-19 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59172272A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009200149A (ja) * | 2008-02-20 | 2009-09-03 | Sanken Electric Co Ltd | 半導体スイッチング装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2655594B2 (ja) * | 1984-01-10 | 1997-09-24 | 日本電気株式会社 | 集積型半導体装置 |
-
1983
- 1983-03-19 JP JP4531183A patent/JPS59172272A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009200149A (ja) * | 2008-02-20 | 2009-09-03 | Sanken Electric Co Ltd | 半導体スイッチング装置 |
Also Published As
Publication number | Publication date |
---|---|
JPS59172272A (ja) | 1984-09-28 |
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