GB1121653A - Field effect transistors - Google Patents

Field effect transistors

Info

Publication number
GB1121653A
GB1121653A GB3031364A GB3031364A GB1121653A GB 1121653 A GB1121653 A GB 1121653A GB 3031364 A GB3031364 A GB 3031364A GB 3031364 A GB3031364 A GB 3031364A GB 1121653 A GB1121653 A GB 1121653A
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
transistors
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3031364A
Inventor
Thomas Edward Price
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Priority to GB3031364A priority Critical patent/GB1121653A/en
Publication of GB1121653A publication Critical patent/GB1121653A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
GB3031364A 1964-07-31 1964-07-31 Field effect transistors Expired GB1121653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3031364A GB1121653A (en) 1964-07-31 1964-07-31 Field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3031364A GB1121653A (en) 1964-07-31 1964-07-31 Field effect transistors

Publications (1)

Publication Number Publication Date
GB1121653A true GB1121653A (en) 1968-07-31

Family

ID=10305680

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3031364A Expired GB1121653A (en) 1964-07-31 1964-07-31 Field effect transistors

Country Status (1)

Country Link
GB (1) GB1121653A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454703A1 (en) * 1979-04-21 1980-11-14 Nippon Telegraph & Telephone Fabrication process for microwave FET - has substrate of high resistivity compound with gate regions on one side and source and drain regions on other
US4996570A (en) * 1987-12-23 1991-02-26 U.S. Philips Corp. Semiconductor structure having a conductive channel

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454703A1 (en) * 1979-04-21 1980-11-14 Nippon Telegraph & Telephone Fabrication process for microwave FET - has substrate of high resistivity compound with gate regions on one side and source and drain regions on other
US4996570A (en) * 1987-12-23 1991-02-26 U.S. Philips Corp. Semiconductor structure having a conductive channel

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