JPS5483383A - Semiconductor and method of fabricating same - Google Patents
Semiconductor and method of fabricating sameInfo
- Publication number
- JPS5483383A JPS5483383A JP14543478A JP14543478A JPS5483383A JP S5483383 A JPS5483383 A JP S5483383A JP 14543478 A JP14543478 A JP 14543478A JP 14543478 A JP14543478 A JP 14543478A JP S5483383 A JPS5483383 A JP S5483383A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- fabricating same
- fabricating
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7735851A FR2410366A1 (fr) | 1977-11-29 | 1977-11-29 | Transistor de type mesa et procede de realisation de ce transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5483383A true JPS5483383A (en) | 1979-07-03 |
Family
ID=9198188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14543478A Pending JPS5483383A (en) | 1977-11-29 | 1978-11-27 | Semiconductor and method of fabricating same |
Country Status (5)
Country | Link |
---|---|
US (1) | US4249195A (ja) |
JP (1) | JPS5483383A (ja) |
DE (1) | DE2851186A1 (ja) |
FR (1) | FR2410366A1 (ja) |
GB (1) | GB2009499B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404658A (en) * | 1980-03-12 | 1983-09-13 | Harris Corporation | Mesa bipolar memory cell and method of fabrication |
US4547793A (en) * | 1983-12-27 | 1985-10-15 | International Business Machines Corporation | Trench-defined semiconductor structure |
JPH1140797A (ja) * | 1997-05-19 | 1999-02-12 | Matsushita Electron Corp | 半導体装置及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3772577A (en) * | 1972-02-10 | 1973-11-13 | Texas Instruments Inc | Guard ring mesa construction for low and high voltage npn and pnp transistors and diodes and method of making same |
FR2220877A1 (en) * | 1973-03-09 | 1974-10-04 | Thomson Csf | PIN diodes collectively made from PIN chip - are formed between electrodes by etching parallel trenches in two stages followed by separation |
IT1040004B (it) * | 1974-08-21 | 1979-12-20 | Rca Corp | Metodo per la creazione del con torno marginale di una lastrina di materiale semiconduttore |
US4165516A (en) * | 1975-04-28 | 1979-08-21 | U.S. Philips Corporation | Semiconductor device and method of manufacturing same |
NL7604951A (nl) * | 1976-05-10 | 1977-11-14 | Philips Nv | Glas voor het passiveren van halfgeleider- inrichtingen. |
-
1977
- 1977-11-29 FR FR7735851A patent/FR2410366A1/fr active Granted
-
1978
- 1978-11-16 US US05/961,333 patent/US4249195A/en not_active Expired - Lifetime
- 1978-11-24 GB GB7845923A patent/GB2009499B/en not_active Expired
- 1978-11-27 JP JP14543478A patent/JPS5483383A/ja active Pending
- 1978-11-27 DE DE19782851186 patent/DE2851186A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2410366B1 (ja) | 1982-02-26 |
GB2009499A (en) | 1979-06-13 |
DE2851186A1 (de) | 1979-06-07 |
US4249195A (en) | 1981-02-03 |
GB2009499B (en) | 1982-03-10 |
FR2410366A1 (fr) | 1979-06-22 |
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