IT939155B - Dispositivo per depositare strati di materiale semiconduttore - Google Patents

Dispositivo per depositare strati di materiale semiconduttore

Info

Publication number
IT939155B
IT939155B IT30677/71A IT3067771A IT939155B IT 939155 B IT939155 B IT 939155B IT 30677/71 A IT30677/71 A IT 30677/71A IT 3067771 A IT3067771 A IT 3067771A IT 939155 B IT939155 B IT 939155B
Authority
IT
Italy
Prior art keywords
semiconductor material
depositing layers
depositing
layers
semiconductor
Prior art date
Application number
IT30677/71A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT939155B publication Critical patent/IT939155B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
IT30677/71A 1970-11-05 1971-11-03 Dispositivo per depositare strati di materiale semiconduttore IT939155B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2054538A DE2054538C3 (de) 1970-11-05 1970-11-05 Vorrichtung zum Abscheiden von Schichten aus Halbleitermaterial

Publications (1)

Publication Number Publication Date
IT939155B true IT939155B (it) 1973-02-10

Family

ID=5787272

Family Applications (1)

Application Number Title Priority Date Filing Date
IT30677/71A IT939155B (it) 1970-11-05 1971-11-03 Dispositivo per depositare strati di materiale semiconduttore

Country Status (8)

Country Link
US (1) US3735727A (it)
CA (1) CA948075A (it)
DE (1) DE2054538C3 (it)
FR (1) FR2113442A5 (it)
GB (1) GB1328584A (it)
IT (1) IT939155B (it)
NL (1) NL7115280A (it)
SE (1) SE363246B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880112A (en) * 1971-10-20 1975-04-29 Commissariat Energie Atomique Device for the preparation of thin films
US4291640A (en) * 1977-09-09 1981-09-29 The Continental Group, Inc. Powder coating apparatus for two-piece cans
US4203387A (en) * 1978-12-28 1980-05-20 General Signal Corporation Cage for low pressure silicon dioxide deposition reactors
US4649859A (en) * 1985-02-19 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
FR2623524B1 (fr) * 1987-11-20 1990-03-30 Lami Philippe Perfectionnement au procede et au dispositif de depot metallique sur un echantillon
NL1022155C2 (nl) * 2002-12-12 2004-06-22 Otb Group Bv Werkwijze, alsmede inrichting voor het behandelen van een oppervlak van ten minste één substraat.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2884894A (en) * 1956-11-02 1959-05-05 Metallgesellschaft Ag Apparatus for producing hard coatings on workpieces
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3598082A (en) * 1969-08-14 1971-08-10 Texas Instruments Inc Continuous epitaxial deposition system

Also Published As

Publication number Publication date
DE2054538B2 (de) 1978-07-27
DE2054538A1 (de) 1972-05-10
GB1328584A (en) 1973-08-30
FR2113442A5 (it) 1972-06-23
CA948075A (en) 1974-05-28
SE363246B (it) 1974-01-14
US3735727A (en) 1973-05-29
NL7115280A (it) 1972-05-09
DE2054538C3 (de) 1979-03-22

Similar Documents

Publication Publication Date Title
BE761239A (fr) Dispositifs semi-conducteurs integres
IT965783B (it) Materiale di trasporto di strato fotosensibile
IT1007402B (it) Dispositivo per fabbricare strati sottili di sostanze inorganiche
IT981860B (it) Dispositivo semiconduttore
BR7404876D0 (pt) Dispositivo semicondutor
IT996680B (it) Dispositivo semiconduttore
IT979573B (it) Dispositivo per la manipolazione di strati di nobilitazione
IT958787B (it) Dispositivo di serpentaggio per materiale in forma di nastro
IT951749B (it) Dispositivo per il trasporto di materiale sciolto
IT955925B (it) Dispositivo per il trattamento di materiale tessile
IT965683B (it) Dispositivo per fabbricare strati sottili di sostanze inorganiche
IT970374B (it) Materiale vetroso o cristallino per sottili strati fototropici
IT1002384B (it) Dispositivo semiconduttore
BR7308693D0 (pt) Dispositivo semicondutor
CH533363A (de) Halbleiteranordnung
IT939155B (it) Dispositivo per depositare strati di materiale semiconduttore
IT986562B (it) Dispositivo semiconduttore
IT943535B (it) Dispositivo per trattare materiale fotografico
IT975028B (it) Dispositivo per la termosaldatura di strati termoplastici
IT1002416B (it) Dispositivo semiconduttore
IT1040004B (it) Metodo per la creazione del con torno marginale di una lastrina di materiale semiconduttore
IT949790B (it) Procedimento per preparare sottili strati di tantalio
IT977703B (it) Dispositivo semiconduttore
IT981333B (it) Procedimento per formare strati di materiale semiconduttore su un substrato
IT971888B (it) Materiale semiconduttore magnetico