GB1328584A - Appatatus for the deposition of a layer of semiconductor material on the surface of semiconductor wafers - Google Patents

Appatatus for the deposition of a layer of semiconductor material on the surface of semiconductor wafers

Info

Publication number
GB1328584A
GB1328584A GB4550671A GB4550671A GB1328584A GB 1328584 A GB1328584 A GB 1328584A GB 4550671 A GB4550671 A GB 4550671A GB 4550671 A GB4550671 A GB 4550671A GB 1328584 A GB1328584 A GB 1328584A
Authority
GB
United Kingdom
Prior art keywords
passages
appatatus
deposition
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4550671A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1328584A publication Critical patent/GB1328584A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

Abstract

1328584 Depositing semi-conductor material SIEMENS A G 30 Sept 1971 [5 Nov 1970] 45506/71 Heading C7F A semi-conductor, e.g. silicon, is deposited on substrates 5 by decomposition of a gas fed from a pivoted tube 9, and gas is withdrawn through a pipe 23 from inner and outer outlet chambers 17, 14. The passages 18 to the inner chamber 17 present less resistance to flow than the passages 16 from the inner to the outer chamber, either by making the passages bigger or providing more of them. The substrates are heated by an element 6.
GB4550671A 1970-11-05 1971-09-30 Appatatus for the deposition of a layer of semiconductor material on the surface of semiconductor wafers Expired GB1328584A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2054538A DE2054538C3 (en) 1970-11-05 1970-11-05 Device for depositing layers of semiconductor material

Publications (1)

Publication Number Publication Date
GB1328584A true GB1328584A (en) 1973-08-30

Family

ID=5787272

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4550671A Expired GB1328584A (en) 1970-11-05 1971-09-30 Appatatus for the deposition of a layer of semiconductor material on the surface of semiconductor wafers

Country Status (8)

Country Link
US (1) US3735727A (en)
CA (1) CA948075A (en)
DE (1) DE2054538C3 (en)
FR (1) FR2113442A5 (en)
GB (1) GB1328584A (en)
IT (1) IT939155B (en)
NL (1) NL7115280A (en)
SE (1) SE363246B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880112A (en) * 1971-10-20 1975-04-29 Commissariat Energie Atomique Device for the preparation of thin films
US4291640A (en) * 1977-09-09 1981-09-29 The Continental Group, Inc. Powder coating apparatus for two-piece cans
US4203387A (en) * 1978-12-28 1980-05-20 General Signal Corporation Cage for low pressure silicon dioxide deposition reactors
US4649859A (en) * 1985-02-19 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
FR2623524B1 (en) * 1987-11-20 1990-03-30 Lami Philippe IMPROVEMENT IN THE METHOD AND DEVICE FOR METAL DEPOSITION ON A SAMPLE
NL1022155C2 (en) * 2002-12-12 2004-06-22 Otb Group Bv Method and device for treating a surface of at least one substrate.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2884894A (en) * 1956-11-02 1959-05-05 Metallgesellschaft Ag Apparatus for producing hard coatings on workpieces
US3367303A (en) * 1963-05-29 1968-02-06 Monsanto Co Chemical equipment
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3598082A (en) * 1969-08-14 1971-08-10 Texas Instruments Inc Continuous epitaxial deposition system

Also Published As

Publication number Publication date
DE2054538A1 (en) 1972-05-10
NL7115280A (en) 1972-05-09
FR2113442A5 (en) 1972-06-23
SE363246B (en) 1974-01-14
US3735727A (en) 1973-05-29
IT939155B (en) 1973-02-10
DE2054538C3 (en) 1979-03-22
CA948075A (en) 1974-05-28
DE2054538B2 (en) 1978-07-27

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees