GB1346938A - Reactors and method of manufacture of semiconductor devices using such a reactor - Google Patents

Reactors and method of manufacture of semiconductor devices using such a reactor

Info

Publication number
GB1346938A
GB1346938A GB2337671*A GB2337671A GB1346938A GB 1346938 A GB1346938 A GB 1346938A GB 2337671 A GB2337671 A GB 2337671A GB 1346938 A GB1346938 A GB 1346938A
Authority
GB
United Kingdom
Prior art keywords
tube
substrates
gas
deposited
cms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2337671*A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1346938A publication Critical patent/GB1346938A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1346938 Gas/solid contact; decomposing gases PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 19 April 1971 [11 March 1970] 23376/71 Heading B1F [Also in Division C1] Semiconductor material is deposited on substrates 4 from gas flowing as at 5 through tube 2 which gradually narrows as at 6, the substrates being heated through susceptors 21 by high frequency inductions coil 3. The susceptor may consist of graphite with a surface of silicon carbide. The substrates 4 may be silicon and silicon may be epitaxially deposited from a hydrogen stream containing SiH 4 or SiHCl 3 , or silicon nitride may be deposited. Polycrystalline layers may be deposited. Etching processes on substrates using an etchant gas may also be carried out. The substrates may be continually passed through the tube during deposition. The process condition may satisfy the following relationship: wherein V o is the rate of flow of the gas stream in cms/sec at N.T.P. at the part of tube 2 where the process begins to take place, T s is the temperature in degrees K of the substrate, T m is the temperature in degrees K of the gas in the tube portion for the performance of the process, b is the distance in cms between the susceptor 21 and the top inner surface of the part of the tube 2 where the process begins to take place, and D o is the diffusion coefficient in sq. cms/sec of the compound in the gas stream which diffuses the slowest, and Ï is the angle at which the top and bottom surface of the tube 2 approach each other.
GB2337671*A 1970-03-11 1971-04-19 Reactors and method of manufacture of semiconductor devices using such a reactor Expired GB1346938A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (en) 1970-03-11 1970-03-11

Publications (1)

Publication Number Publication Date
GB1346938A true GB1346938A (en) 1974-02-13

Family

ID=19809548

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2337671*A Expired GB1346938A (en) 1970-03-11 1971-04-19 Reactors and method of manufacture of semiconductor devices using such a reactor

Country Status (11)

Country Link
US (1) US3750620A (en)
JP (1) JPS5317862B1 (en)
AT (1) AT321994B (en)
BE (1) BE764013A (en)
CA (1) CA923635A (en)
CH (1) CH532960A (en)
DE (1) DE2110289C3 (en)
FR (1) FR2084428A5 (en)
GB (1) GB1346938A (en)
NL (1) NL7003431A (en)
SE (1) SE368724B (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
JPS5942970B2 (en) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 Reaction tube for semiconductor heat treatment
JPS5944771B2 (en) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 Semiconductor heat treatment furnace
JPS5923464B2 (en) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 Semiconductor heat treatment equipment
US4325319A (en) * 1980-01-18 1982-04-20 Caterpillar Tractor Co. Air flow system for the charging conductor in an electrostatic painting system
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
FR2612946B1 (en) * 1987-03-27 1993-02-19 Chimie Metal PROCESS AND PLANT FOR CHEMICAL DEPOSITION OF MODERATE TEMPERATURE ULTRADOR COATINGS
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DE3721636A1 (en) * 1987-06-30 1989-01-12 Aixtron Gmbh QUARTZ GLASS REACTOR FOR MOCVD SYSTEMS
WO1989012703A1 (en) * 1988-06-22 1989-12-28 Asm Epitaxy, Inc. Gas injector apparatus for chemical vapor deposition reactors
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
JP3068075B2 (en) * 1998-01-17 2000-07-24 ハンベック コーポレイション Horizontal reactor for compound semiconductor production
SE9801190D0 (en) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapor Deposition
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
US20060096531A1 (en) * 2002-06-10 2006-05-11 Tokyo Electron Limited Processing device and processing method
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
US20080092812A1 (en) * 2004-06-10 2008-04-24 Mcdiarmid James Methods and Apparatuses for Depositing Uniform Layers
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4466723B2 (en) * 2007-11-21 2010-05-26 住友電気工業株式会社 Metalorganic vapor phase epitaxy system
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
JP5954202B2 (en) * 2013-01-29 2016-07-20 東京エレクトロン株式会社 Deposition equipment
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3367304A (en) * 1967-03-13 1968-02-06 Dow Corning Deposition chamber for manufacture of refractory coated filaments
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors

Also Published As

Publication number Publication date
SE368724B (en) 1974-07-15
FR2084428A5 (en) 1971-12-17
DE2110289B2 (en) 1980-03-13
CA923635A (en) 1973-03-27
DE2110289C3 (en) 1980-10-30
US3750620A (en) 1973-08-07
NL7003431A (en) 1971-09-14
AT321994B (en) 1975-04-25
CH532960A (en) 1973-01-31
DE2110289A1 (en) 1971-09-23
BE764013A (en) 1971-09-09
JPS5317862B1 (en) 1978-06-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee