FR2084428A5 - - Google Patents

Info

Publication number
FR2084428A5
FR2084428A5 FR7108288A FR7108288A FR2084428A5 FR 2084428 A5 FR2084428 A5 FR 2084428A5 FR 7108288 A FR7108288 A FR 7108288A FR 7108288 A FR7108288 A FR 7108288A FR 2084428 A5 FR2084428 A5 FR 2084428A5
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7108288A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of FR2084428A5 publication Critical patent/FR2084428A5/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
FR7108288A 1970-03-11 1971-03-10 Expired FR2084428A5 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (en) 1970-03-11 1970-03-11

Publications (1)

Publication Number Publication Date
FR2084428A5 true FR2084428A5 (en) 1971-12-17

Family

ID=19809548

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7108288A Expired FR2084428A5 (en) 1970-03-11 1971-03-10

Country Status (11)

Country Link
US (1) US3750620A (en)
JP (1) JPS5317862B1 (en)
AT (1) AT321994B (en)
BE (1) BE764013A (en)
CA (1) CA923635A (en)
CH (1) CH532960A (en)
DE (1) DE2110289C3 (en)
FR (1) FR2084428A5 (en)
GB (1) GB1346938A (en)
NL (1) NL7003431A (en)
SE (1) SE368724B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2612946A1 (en) * 1987-03-27 1988-09-30 Chimie Metal METHOD AND INSTALLATION FOR THE CHEMICAL DEPOSITION OF ULTRA-MODERATE TEMPERATURE COATINGS

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
JPS5942970B2 (en) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 Reaction tube for semiconductor heat treatment
JPS5944771B2 (en) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 Semiconductor heat treatment furnace
JPS5923464B2 (en) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 Semiconductor heat treatment equipment
US4325319A (en) * 1980-01-18 1982-04-20 Caterpillar Tractor Co. Air flow system for the charging conductor in an electrostatic painting system
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DE3721636A1 (en) * 1987-06-30 1989-01-12 Aixtron Gmbh QUARTZ GLASS REACTOR FOR MOCVD SYSTEMS
WO1989012703A1 (en) * 1988-06-22 1989-12-28 Asm Epitaxy, Inc. Gas injector apparatus for chemical vapor deposition reactors
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
US6214116B1 (en) * 1998-01-17 2001-04-10 Hanvac Corporation Horizontal reactor for compound semiconductor growth
SE9801190D0 (en) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapor Deposition
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
WO2003104525A1 (en) * 2002-06-10 2003-12-18 東京エレクトロン株式会社 Processing device and processing method
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
WO2005124859A2 (en) * 2004-06-10 2005-12-29 Avansys, Inc. Methods and apparatuses for depositing uniform layers
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4466723B2 (en) * 2007-11-21 2010-05-26 住友電気工業株式会社 Metalorganic vapor phase epitaxy system
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
JP5954202B2 (en) * 2013-01-29 2016-07-20 東京エレクトロン株式会社 Deposition equipment
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3367304A (en) * 1967-03-13 1968-02-06 Dow Corning Deposition chamber for manufacture of refractory coated filaments
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2612946A1 (en) * 1987-03-27 1988-09-30 Chimie Metal METHOD AND INSTALLATION FOR THE CHEMICAL DEPOSITION OF ULTRA-MODERATE TEMPERATURE COATINGS
WO1988007596A1 (en) * 1987-03-27 1988-10-06 Chimie Metal Process and installation for the chemical deposition of ultrahard coatings at moderate temperature

Also Published As

Publication number Publication date
US3750620A (en) 1973-08-07
BE764013A (en) 1971-09-09
SE368724B (en) 1974-07-15
JPS5317862B1 (en) 1978-06-12
DE2110289C3 (en) 1980-10-30
DE2110289B2 (en) 1980-03-13
NL7003431A (en) 1971-09-14
CH532960A (en) 1973-01-31
AT321994B (en) 1975-04-25
DE2110289A1 (en) 1971-09-23
CA923635A (en) 1973-03-27
GB1346938A (en) 1974-02-13

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Legal Events

Date Code Title Description
ST Notification of lapse