DE2536108A1 - Kantenbegrenzung bei halbleiterscheibchen - Google Patents
Kantenbegrenzung bei halbleiterscheibchenInfo
- Publication number
- DE2536108A1 DE2536108A1 DE19752536108 DE2536108A DE2536108A1 DE 2536108 A1 DE2536108 A1 DE 2536108A1 DE 19752536108 DE19752536108 DE 19752536108 DE 2536108 A DE2536108 A DE 2536108A DE 2536108 A1 DE2536108 A1 DE 2536108A1
- Authority
- DE
- Germany
- Prior art keywords
- transition
- grooves
- mesa
- junction
- disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000005530 etching Methods 0.000 claims description 12
- 235000012431 wafers Nutrition 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 230000007704 transition Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000007937 lozenge Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000010603 pastilles Nutrition 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Weting (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49928874A | 1974-08-21 | 1974-08-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2536108A1 true DE2536108A1 (de) | 1976-03-11 |
Family
ID=23984661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752536108 Pending DE2536108A1 (de) | 1974-08-21 | 1975-08-13 | Kantenbegrenzung bei halbleiterscheibchen |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5146076A (it) |
| BE (1) | BE832633A (it) |
| CA (1) | CA1038969A (it) |
| DE (1) | DE2536108A1 (it) |
| FR (1) | FR2282722A1 (it) |
| GB (1) | GB1471116A (it) |
| IT (1) | IT1040004B (it) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0379208A2 (en) * | 1989-01-20 | 1990-07-25 | Fujitsu Limited | A method for producing a device having an insulator sandwiched between two semiconductor layers |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7607298A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd volgens de werkwijze. |
| FR2410366A1 (fr) * | 1977-11-29 | 1979-06-22 | Radiotechnique Compelec | Transistor de type mesa et procede de realisation de ce transistor |
| JPS5895553A (ja) * | 1981-12-01 | 1983-06-07 | Nippon Shokubai Kagaku Kogyo Co Ltd | 耐熱衝撃性の改良されたハニカム触媒の製造方法 |
| DE3422051C2 (de) * | 1984-06-14 | 1986-06-26 | Brown, Boveri & Cie Ag, 6800 Mannheim | Silizium-Halbleiterbauelement mit ätztechnisch hergestellter Randkontur und Verfahren zur Herstellung dieses Bauelements |
| GB2176338A (en) * | 1985-06-06 | 1986-12-17 | Marconi Electronic Devices | Edge contouring in a semiconductor device |
| JPH03129854A (ja) * | 1989-10-16 | 1991-06-03 | Toshiba Corp | 半導体装置の製造方法 |
| DE19536438A1 (de) * | 1995-09-29 | 1997-04-03 | Siemens Ag | Halbleiterbauelement und Herstellverfahren |
-
1975
- 1975-07-23 IT IT2568975A patent/IT1040004B/it active
- 1975-07-23 CA CA232,120A patent/CA1038969A/en not_active Expired
- 1975-08-12 GB GB3354775A patent/GB1471116A/en not_active Expired
- 1975-08-13 DE DE19752536108 patent/DE2536108A1/de active Pending
- 1975-08-19 FR FR7525662A patent/FR2282722A1/fr not_active Withdrawn
- 1975-08-20 JP JP10165875A patent/JPS5146076A/ja active Granted
- 1975-08-21 BE BE159371A patent/BE832633A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0379208A2 (en) * | 1989-01-20 | 1990-07-25 | Fujitsu Limited | A method for producing a device having an insulator sandwiched between two semiconductor layers |
| EP0379208A3 (en) * | 1989-01-20 | 1991-03-13 | Fujitsu Limited | A method for producing a device having an insulator sandwiched between two semiconductor layers |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1038969A (en) | 1978-09-19 |
| GB1471116A (en) | 1977-04-21 |
| IT1040004B (it) | 1979-12-20 |
| BE832633A (fr) | 1975-12-16 |
| FR2282722A1 (fr) | 1976-03-19 |
| JPS5227033B2 (it) | 1977-07-18 |
| JPS5146076A (ja) | 1976-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |