IT1010165B - Procedimento perfezionato per la fabbricazione di circuiti semicon duttori integrati - Google Patents

Procedimento perfezionato per la fabbricazione di circuiti semicon duttori integrati

Info

Publication number
IT1010165B
IT1010165B IT21996/74A IT2199674A IT1010165B IT 1010165 B IT1010165 B IT 1010165B IT 21996/74 A IT21996/74 A IT 21996/74A IT 2199674 A IT2199674 A IT 2199674A IT 1010165 B IT1010165 B IT 1010165B
Authority
IT
Italy
Prior art keywords
semiconic
ductors
circuits
manufacture
integrated
Prior art date
Application number
IT21996/74A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1010165B publication Critical patent/IT1010165B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76819—Smoothing of the dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
IT21996/74A 1973-06-29 1974-04-29 Procedimento perfezionato per la fabbricazione di circuiti semicon duttori integrati IT1010165B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00375298A US3804738A (en) 1973-06-29 1973-06-29 Partial planarization of electrically insulative films by resputtering

Publications (1)

Publication Number Publication Date
IT1010165B true IT1010165B (it) 1977-01-10

Family

ID=23480308

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21996/74A IT1010165B (it) 1973-06-29 1974-04-29 Procedimento perfezionato per la fabbricazione di circuiti semicon duttori integrati

Country Status (7)

Country Link
US (1) US3804738A (it)
JP (2) JPS5546060B2 (it)
CA (1) CA1030665A (it)
DE (1) DE2430692C2 (it)
FR (1) FR2235481B1 (it)
GB (1) GB1418278A (it)
IT (1) IT1010165B (it)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5639020B2 (it) * 1973-10-05 1981-09-10
US3976524A (en) * 1974-06-17 1976-08-24 Ibm Corporation Planarization of integrated circuit surfaces through selective photoresist masking
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
US4007103A (en) * 1975-10-14 1977-02-08 Ibm Corporation Planarizing insulative layers by resputtering
DD136670A1 (de) * 1976-02-04 1979-07-18 Rudolf Sacher Verfahren und vorrichtung zur herstellung von halbleiterstrukturen
US4029562A (en) * 1976-04-29 1977-06-14 Ibm Corporation Forming feedthrough connections for multi-level interconnections metallurgy systems
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
FR2375718A1 (fr) * 1976-12-27 1978-07-21 Radiotechnique Compelec Dispositif semiconducteur a reseau d'interconnexions multicouche
DE2705611A1 (de) * 1977-02-10 1978-08-17 Siemens Ag Verfahren zum bedecken einer auf einem substrat befindlichen ersten schicht oder schichtenfolge mit einer weiteren zweiten schicht durch aufsputtern
NL7701559A (nl) * 1977-02-15 1978-08-17 Philips Nv Het maken van schuine hellingen aan metaal- patronen, alsmede substraat voor een geinte- greerde schakeling voorzien van een dergelijk patroon.
US4111775A (en) * 1977-07-08 1978-09-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multilevel metallization method for fabricating a metal oxide semiconductor device
JPS5432091A (en) * 1977-08-15 1979-03-09 Nec Corp Radar interference eleimenating system
JPS597212B2 (ja) * 1977-09-05 1984-02-17 富士通株式会社 プラズマ・エッチング方法
US4172004A (en) * 1977-10-20 1979-10-23 International Business Machines Corporation Method for forming dense dry etched multi-level metallurgy with non-overlapped vias
US4289834A (en) * 1977-10-20 1981-09-15 Ibm Corporation Dense dry etched multi-level metallurgy with non-overlapped vias
JPS54159662A (en) * 1978-06-07 1979-12-17 Hitachi Ltd Method of connecting wire conductors
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
JPS5893354A (ja) * 1981-11-30 1983-06-03 Mitsubishi Electric Corp 半導体装置の製造法
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
JPS59200440A (ja) * 1983-04-28 1984-11-13 Agency Of Ind Science & Technol 配線構造の製造方法
US4470874A (en) * 1983-12-15 1984-09-11 International Business Machines Corporation Planarization of multi-level interconnected metallization system
JPH0618194B2 (ja) * 1984-07-21 1994-03-09 工業技術院長 段差の被覆方法
JPH0697660B2 (ja) * 1985-03-23 1994-11-30 日本電信電話株式会社 薄膜形成方法
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
US5256594A (en) * 1989-06-16 1993-10-26 Intel Corporation Masking technique for depositing gallium arsenide on silicon
US5855966A (en) * 1997-11-26 1999-01-05 Eastman Kodak Company Method for precision polishing non-planar, aspherical surfaces

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3514844A (en) * 1967-12-26 1970-06-02 Hughes Aircraft Co Method of making field-effect device with insulated gate
US3549876A (en) * 1968-03-07 1970-12-22 Eaton Yale & Towne Crane operating radius indicator
FR2119930B1 (it) * 1970-12-31 1974-08-19 Ibm
DE2202077A1 (de) * 1971-05-17 1972-11-30 Hochvakuum Dresden Veb Verfahren zur Herstellung von Mehrlagenleiterplatten

Also Published As

Publication number Publication date
GB1418278A (en) 1975-12-17
US3804738A (en) 1974-04-16
JPS55130147A (en) 1980-10-08
FR2235481B1 (it) 1976-07-16
DE2430692C2 (de) 1982-10-21
DE2430692A1 (de) 1975-01-16
CA1030665A (en) 1978-05-02
FR2235481A1 (it) 1975-01-24
JPS5623302B2 (it) 1981-05-30
JPS5546060B2 (it) 1980-11-21
JPS5024079A (it) 1975-03-14

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