FR2350877A1 - Procede de croissance epitaxique en phase solide ameliore par bombardement ionique - Google Patents
Procede de croissance epitaxique en phase solide ameliore par bombardement ioniqueInfo
- Publication number
- FR2350877A1 FR2350877A1 FR7709628A FR7709628A FR2350877A1 FR 2350877 A1 FR2350877 A1 FR 2350877A1 FR 7709628 A FR7709628 A FR 7709628A FR 7709628 A FR7709628 A FR 7709628A FR 2350877 A1 FR2350877 A1 FR 2350877A1
- Authority
- FR
- France
- Prior art keywords
- solid phase
- growth process
- process improved
- ion bombarding
- epitaxic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68524876A | 1976-05-11 | 1976-05-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2350877A1 true FR2350877A1 (fr) | 1977-12-09 |
Family
ID=24751374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7709628A Withdrawn FR2350877A1 (fr) | 1976-05-11 | 1977-03-25 | Procede de croissance epitaxique en phase solide ameliore par bombardement ionique |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS52136568A (fr) |
DE (1) | DE2711543A1 (fr) |
FR (1) | FR2350877A1 (fr) |
GB (1) | GB1515837A (fr) |
IT (1) | IT1115628B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3126050A1 (de) * | 1981-07-02 | 1983-01-13 | Hanno Prof. Dr. 2000 Hamburg Schaumburg | Verfahren zur erzeugung monokristalliner oder grobpolykristalliner schichten |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2968316B1 (fr) * | 2010-12-01 | 2013-06-28 | Commissariat Energie Atomique | Procede de preparation d'une couche de silicium cristallise a gros grains |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
-
1977
- 1977-03-17 IT IT21347/77A patent/IT1115628B/it active
- 1977-03-17 DE DE19772711543 patent/DE2711543A1/de active Pending
- 1977-03-25 FR FR7709628A patent/FR2350877A1/fr not_active Withdrawn
- 1977-04-19 GB GB16291/77A patent/GB1515837A/en not_active Expired
- 1977-04-22 JP JP4597777A patent/JPS52136568A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3126050A1 (de) * | 1981-07-02 | 1983-01-13 | Hanno Prof. Dr. 2000 Hamburg Schaumburg | Verfahren zur erzeugung monokristalliner oder grobpolykristalliner schichten |
Also Published As
Publication number | Publication date |
---|---|
DE2711543A1 (de) | 1977-11-24 |
GB1515837A (en) | 1978-06-28 |
IT1115628B (it) | 1986-02-03 |
JPS52136568A (en) | 1977-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |