KR860004464A - 반도체박막의 형성방법 - Google Patents
반도체박막의 형성방법Info
- Publication number
- KR860004464A KR860004464A KR1019850008266A KR850008266A KR860004464A KR 860004464 A KR860004464 A KR 860004464A KR 1019850008266 A KR1019850008266 A KR 1019850008266A KR 850008266 A KR850008266 A KR 850008266A KR 860004464 A KR860004464 A KR 860004464A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- thin film
- semiconductor thin
- semiconductor
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP252882 | 1984-11-30 | ||
JP59252882A JPH0817157B2 (ja) | 1984-11-30 | 1984-11-30 | 薄膜トランジスタの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860004464A true KR860004464A (ko) | 1986-06-23 |
KR930010093B1 KR930010093B1 (ko) | 1993-10-14 |
Family
ID=17243471
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850008266A KR930010093B1 (ko) | 1984-11-30 | 1985-11-06 | 반도체박막의 형성방법 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH0817157B2 (ko) |
KR (1) | KR930010093B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100567273B1 (ko) * | 1998-08-27 | 2006-05-25 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 및 그 제조방법 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2699347B2 (ja) * | 1987-04-14 | 1998-01-19 | ソニー株式会社 | 半導体基板の製造方法 |
JP2741385B2 (ja) * | 1988-09-27 | 1998-04-15 | 日立建機株式会社 | シリコン薄膜ピエゾ抵抗素子の製造法 |
KR100269289B1 (ko) * | 1997-02-19 | 2000-10-16 | 윤종용 | 실리콘막의결정화방법 |
KR100624427B1 (ko) * | 2004-07-08 | 2006-09-19 | 삼성전자주식회사 | 다결정 실리콘 제조방법 및 이를 이용하는 반도체 소자의제조방법 |
CN113745099A (zh) * | 2021-09-06 | 2021-12-03 | 长江存储科技有限责任公司 | 多晶硅层、其制作方法以及半导体器件 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5680126A (en) * | 1979-12-05 | 1981-07-01 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Formation of monocrystalline semiconductor |
JPS57159013A (en) * | 1981-03-27 | 1982-10-01 | Toshiba Corp | Manufacture of semiconductor thin film |
JPS5837913A (ja) * | 1981-08-28 | 1983-03-05 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH0611035B2 (ja) * | 1983-04-15 | 1994-02-09 | ソニー株式会社 | 薄膜の加熱方法 |
-
1984
- 1984-11-30 JP JP59252882A patent/JPH0817157B2/ja not_active Expired - Lifetime
-
1985
- 1985-11-06 KR KR1019850008266A patent/KR930010093B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100567273B1 (ko) * | 1998-08-27 | 2006-05-25 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터 및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
JPS61131413A (ja) | 1986-06-19 |
KR930010093B1 (ko) | 1993-10-14 |
JPH0817157B2 (ja) | 1996-02-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20050930 Year of fee payment: 13 |
|
EXPY | Expiration of term |