JPS57159013A - Manufacture of semiconductor thin film - Google Patents

Manufacture of semiconductor thin film

Info

Publication number
JPS57159013A
JPS57159013A JP4402181A JP4402181A JPS57159013A JP S57159013 A JPS57159013 A JP S57159013A JP 4402181 A JP4402181 A JP 4402181A JP 4402181 A JP4402181 A JP 4402181A JP S57159013 A JPS57159013 A JP S57159013A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
si
amorphous
semiconductor
polycrystalline
crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4402181A
Inventor
Kazumichi Omura
Toshio Yoshii
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02656Special treatments
    • H01L21/02664Aftertreatments
    • H01L21/02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2022Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials

Abstract

PURPOSE:To improve the mobility of carrier by employing the formation of amorphous state from polycrystalline semiconducor due to ion implantation of semiconductor forming element and solid phase regrowth (epitaxial), thereby increasing the crystalline grain size. CONSTITUTION:A polycrystalline Si layer 2 is accumulated by thermal decomposition of SiH4 on an insulating substrate 1 and is heat treated. When Si ions A are implanted in this wafer, it becomes amorphous Si layer from the surface. This wafer is heat treated to polycrystallize the amorphous Si layer 3 on the surface. Then, Si ions B are implanted to form amorphous state to the boundary with SiO2 in the portion deeper than the prescribed depth from the surface being polycrystalline and to further heat treat it to grow the crystalline grains. This epitaxial growth is repeated, thereby obtaining a semiconductor thin film having large and flat crystalline grains.
JP4402181A 1981-03-27 1981-03-27 Manufacture of semiconductor thin film Pending JPS57159013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4402181A JPS57159013A (en) 1981-03-27 1981-03-27 Manufacture of semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4402181A JPS57159013A (en) 1981-03-27 1981-03-27 Manufacture of semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS57159013A true true JPS57159013A (en) 1982-10-01

Family

ID=12680006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4402181A Pending JPS57159013A (en) 1981-03-27 1981-03-27 Manufacture of semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS57159013A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131413A (en) * 1984-11-30 1986-06-19 Sony Corp Formation of semiconductor thin film
JPS61289618A (en) * 1985-06-18 1986-12-19 Canon Inc Semiconductor device and manufacture thereof
JPS62108516A (en) * 1985-11-06 1987-05-19 Sony Corp Solid growth method for polycrystalline semiconductor film
JPS62277719A (en) * 1986-05-27 1987-12-02 Sharp Corp Formation of low-resistance polycrystalline silicon thin-film
JPS62287615A (en) * 1986-06-06 1987-12-14 Sony Corp Formation of polycrystalline silicon film
US4818711A (en) * 1987-08-28 1989-04-04 Intel Corporation High quality oxide on an ion implanted polysilicon surface
EP1120818A1 (en) * 1998-09-25 2001-08-01 Asahi Kasei Kabushiki Kaisha Semiconductor substrate and its production method, semiconductor device comprising the same and its production method
US6383899B1 (en) * 1996-04-05 2002-05-07 Sharp Laboratories Of America, Inc. Method of forming polycrystalline semiconductor film from amorphous deposit by modulating crystallization with a combination of pre-annealing and ion implantation

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131413A (en) * 1984-11-30 1986-06-19 Sony Corp Formation of semiconductor thin film
JPS61289618A (en) * 1985-06-18 1986-12-19 Canon Inc Semiconductor device and manufacture thereof
JPS62108516A (en) * 1985-11-06 1987-05-19 Sony Corp Solid growth method for polycrystalline semiconductor film
JP2536472B2 (en) * 1985-11-06 1996-09-18 ソニー株式会社 Solid phase growth method of the polycrystalline semiconductor film
JPS62277719A (en) * 1986-05-27 1987-12-02 Sharp Corp Formation of low-resistance polycrystalline silicon thin-film
JPS62287615A (en) * 1986-06-06 1987-12-14 Sony Corp Formation of polycrystalline silicon film
US4818711A (en) * 1987-08-28 1989-04-04 Intel Corporation High quality oxide on an ion implanted polysilicon surface
US6383899B1 (en) * 1996-04-05 2002-05-07 Sharp Laboratories Of America, Inc. Method of forming polycrystalline semiconductor film from amorphous deposit by modulating crystallization with a combination of pre-annealing and ion implantation
EP1120818A1 (en) * 1998-09-25 2001-08-01 Asahi Kasei Kabushiki Kaisha Semiconductor substrate and its production method, semiconductor device comprising the same and its production method
EP1120818A4 (en) * 1998-09-25 2005-09-14 Asahi Chemical Ind Semiconductor substrate and its production method, semiconductor device comprising the same and its production method

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