JPH0817157B2 - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPH0817157B2
JPH0817157B2 JP59252882A JP25288284A JPH0817157B2 JP H0817157 B2 JPH0817157 B2 JP H0817157B2 JP 59252882 A JP59252882 A JP 59252882A JP 25288284 A JP25288284 A JP 25288284A JP H0817157 B2 JPH0817157 B2 JP H0817157B2
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
silicon film
film
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59252882A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61131413A (ja
Inventor
隆 野口
健文 大嶋
久雄 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP59252882A priority Critical patent/JPH0817157B2/ja
Priority to KR1019850008266A priority patent/KR930010093B1/ko
Priority to CA000495614A priority patent/CA1239706A/en
Priority to US06/801,319 priority patent/US4693759A/en
Priority to AT0343185A priority patent/AT399421B/de
Priority to GB08529007A priority patent/GB2169442B/en
Priority to DE3541587A priority patent/DE3541587C2/de
Priority to NL8503269A priority patent/NL194832C/nl
Priority to FR858517451A priority patent/FR2573916B1/fr
Publication of JPS61131413A publication Critical patent/JPS61131413A/ja
Publication of JPH0817157B2 publication Critical patent/JPH0817157B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
JP59252882A 1984-11-26 1984-11-30 薄膜トランジスタの製造方法 Expired - Lifetime JPH0817157B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP59252882A JPH0817157B2 (ja) 1984-11-30 1984-11-30 薄膜トランジスタの製造方法
KR1019850008266A KR930010093B1 (ko) 1984-11-30 1985-11-06 반도체박막의 형성방법
CA000495614A CA1239706A (en) 1984-11-26 1985-11-19 Method of forming a thin semiconductor film
US06/801,319 US4693759A (en) 1984-11-26 1985-11-25 Method of forming a thin semiconductor film
AT0343185A AT399421B (de) 1984-11-26 1985-11-25 Verfahren zur ausbildung einer dünnen halbleiterschicht
GB08529007A GB2169442B (en) 1984-11-26 1985-11-25 Forming thin semiconductor films
DE3541587A DE3541587C2 (de) 1984-11-26 1985-11-25 Verfahren zur Herstellung eines dünnen Halbleiterfilms
NL8503269A NL194832C (nl) 1984-11-26 1985-11-26 Werkwijze voor het vormen van een dunne-halfgeleiderfilm.
FR858517451A FR2573916B1 (fr) 1984-11-26 1985-11-26 Procede de fabrication d'un film semi-conducteur mince et film ainsi obtenu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59252882A JPH0817157B2 (ja) 1984-11-30 1984-11-30 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS61131413A JPS61131413A (ja) 1986-06-19
JPH0817157B2 true JPH0817157B2 (ja) 1996-02-21

Family

ID=17243471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59252882A Expired - Lifetime JPH0817157B2 (ja) 1984-11-26 1984-11-30 薄膜トランジスタの製造方法

Country Status (2)

Country Link
JP (1) JPH0817157B2 (ko)
KR (1) KR930010093B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2699347B2 (ja) * 1987-04-14 1998-01-19 ソニー株式会社 半導体基板の製造方法
JP2741385B2 (ja) * 1988-09-27 1998-04-15 日立建機株式会社 シリコン薄膜ピエゾ抵抗素子の製造法
KR100269289B1 (ko) * 1997-02-19 2000-10-16 윤종용 실리콘막의결정화방법
KR100567273B1 (ko) * 1998-08-27 2006-05-25 엘지.필립스 엘시디 주식회사 박막트랜지스터 및 그 제조방법
KR100624427B1 (ko) * 2004-07-08 2006-09-19 삼성전자주식회사 다결정 실리콘 제조방법 및 이를 이용하는 반도체 소자의제조방법
CN113745099A (zh) * 2021-09-06 2021-12-03 长江存储科技有限责任公司 多晶硅层、其制作方法以及半导体器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5680126A (en) * 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Formation of monocrystalline semiconductor
JPS57159013A (en) * 1981-03-27 1982-10-01 Toshiba Corp Manufacture of semiconductor thin film
JPS5837913A (ja) * 1981-08-28 1983-03-05 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH0611035B2 (ja) * 1983-04-15 1994-02-09 ソニー株式会社 薄膜の加熱方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
第４５回応物学会予稿集（１９８４年秋季），Ｐ．４０７，１４ｐ−Ａ−４，１４ｐ−Ａ−５

Also Published As

Publication number Publication date
KR860004464A (ko) 1986-06-23
JPS61131413A (ja) 1986-06-19
KR930010093B1 (ko) 1993-10-14

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