FR2512286B1 - Laser a semi-conducteur - Google Patents

Laser a semi-conducteur

Info

Publication number
FR2512286B1
FR2512286B1 FR8214583A FR8214583A FR2512286B1 FR 2512286 B1 FR2512286 B1 FR 2512286B1 FR 8214583 A FR8214583 A FR 8214583A FR 8214583 A FR8214583 A FR 8214583A FR 2512286 B1 FR2512286 B1 FR 2512286B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8214583A
Other languages
English (en)
Other versions
FR2512286A1 (fr
Inventor
Junichi Nishizawa
Tadahiro Ohmi
Masakazu Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56133106A external-priority patent/JPS5833887A/ja
Priority claimed from JP57110264A external-priority patent/JPS59987A/ja
Application filed by Individual filed Critical Individual
Publication of FR2512286A1 publication Critical patent/FR2512286A1/fr
Application granted granted Critical
Publication of FR2512286B1 publication Critical patent/FR2512286B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
FR8214583A 1981-08-25 1982-08-25 Laser a semi-conducteur Expired FR2512286B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56133106A JPS5833887A (ja) 1981-08-25 1981-08-25 半導体レ−ザ
JP57110264A JPS59987A (ja) 1982-06-26 1982-06-26 半導体レ−ザ

Publications (2)

Publication Number Publication Date
FR2512286A1 FR2512286A1 (fr) 1983-03-04
FR2512286B1 true FR2512286B1 (fr) 1986-08-14

Family

ID=26449935

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8214583A Expired FR2512286B1 (fr) 1981-08-25 1982-08-25 Laser a semi-conducteur

Country Status (4)

Country Link
US (1) US4534033A (fr)
DE (1) DE3231579A1 (fr)
FR (1) FR2512286B1 (fr)
GB (1) GB2111743B (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
DE3486103T2 (de) * 1983-12-01 1993-07-01 Trw Inc Halbleiterlaser.
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US4730326A (en) * 1984-09-12 1988-03-08 Sharp Kabushiki Kaisha Semiconductor laser array device
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPH0646666B2 (ja) * 1985-01-08 1994-06-15 キヤノン株式会社 半導体レ−ザ装置
US4706255A (en) * 1985-05-20 1987-11-10 Xerox Corporation Phased array semiconductor laser with preferred emission in the fundamental supermode
JPH0738457B2 (ja) * 1986-07-18 1995-04-26 株式会社東芝 光・電子双安定素子
US4729963A (en) * 1986-11-21 1988-03-08 Bell Communications Research, Inc. Fabrication method for modified planar semiconductor structures
JPH0732292B2 (ja) * 1987-06-17 1995-04-10 富士通株式会社 半導体発光装置
US4878222A (en) * 1988-08-05 1989-10-31 Eastman Kodak Company Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
US5291507A (en) * 1991-05-15 1994-03-01 Minnesota Mining And Manufacturing Company Blue-green laser diode
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
CN1111840A (zh) * 1991-05-15 1995-11-15 明尼苏达州采矿制造公司 蓝-绿激光二极管的制造方法
US5159604A (en) * 1991-07-29 1992-10-27 Spectra Diode Laboratories, Inc. Antiguided semiconductor laser array with edge reflectors
US5221633A (en) * 1991-09-09 1993-06-22 Motorola, Inc. Method of manufacturing a distributed drive optoelectronic integrated circuit
JP2801127B2 (ja) * 1993-07-28 1998-09-21 日本碍子株式会社 半導体装置およびその製造方法
US6040590A (en) * 1996-12-12 2000-03-21 California Institute Of Technology Semiconductor device with electrostatic control
WO2005022594A2 (fr) * 2003-08-21 2005-03-10 Infoturn, Inc. Procede et dispositif destines a un guide d'ondes reconfigurable dynamiquement dans un circuit integre
JP5011681B2 (ja) * 2004-12-02 2012-08-29 日産自動車株式会社 半導体装置
KR100722909B1 (ko) * 2005-08-30 2007-05-30 닛산 지도우샤 가부시키가이샤 반도체 장치
DE102016125430A1 (de) * 2016-12-22 2018-06-28 Osram Opto Semiconductors Gmbh Oberflächenmontierbarer Halbleiterlaser, Anordnung mit einem solchen Halbleiterlaser und Betriebsverfahren hierfür

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2137892C3 (de) * 1971-07-29 1978-05-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
CA1006255A (en) * 1974-09-17 1977-03-01 Frederick D. King Variable stripe width semiconductor laser
US4033796A (en) * 1975-06-23 1977-07-05 Xerox Corporation Method of making buried-heterostructure diode injection laser
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
DE2822146C2 (de) * 1978-05-20 1982-11-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
US4217561A (en) * 1978-06-26 1980-08-12 Xerox Corporation Beam scanning using radiation pattern distortion
US4255717A (en) * 1978-10-30 1981-03-10 Xerox Corporation Monolithic multi-emitting laser device
US4249142A (en) * 1978-11-30 1981-02-03 Xerox Corporation Enhancement of lowest order mode operation in nonplanar DH injection lasers
JPS5681994A (en) * 1979-12-07 1981-07-04 Seiji Yasu Field effect type semiconductor laser and manufacture thereof
NL7908969A (nl) * 1979-12-13 1981-07-16 Philips Nv Halfgeleiderlaser.
JPS56104488A (en) * 1980-01-23 1981-08-20 Hitachi Ltd Semiconductor laser element

Also Published As

Publication number Publication date
US4534033A (en) 1985-08-06
DE3231579A1 (de) 1983-05-05
GB2111743B (en) 1985-11-27
FR2512286A1 (fr) 1983-03-04
GB2111743A (en) 1983-07-06

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