FR2613548B1 - Laser a semiconducteur - Google Patents

Laser a semiconducteur

Info

Publication number
FR2613548B1
FR2613548B1 FR888804296A FR8804296A FR2613548B1 FR 2613548 B1 FR2613548 B1 FR 2613548B1 FR 888804296 A FR888804296 A FR 888804296A FR 8804296 A FR8804296 A FR 8804296A FR 2613548 B1 FR2613548 B1 FR 2613548B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR888804296A
Other languages
English (en)
Other versions
FR2613548A1 (fr
Inventor
Hitoshi Kagawa
Ryo Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2613548A1 publication Critical patent/FR2613548A1/fr
Application granted granted Critical
Publication of FR2613548B1 publication Critical patent/FR2613548B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR888804296A 1987-03-31 1988-03-31 Laser a semiconducteur Expired - Fee Related FR2613548B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62079934A JPH0644663B2 (ja) 1987-03-31 1987-03-31 半導体レ−ザ

Publications (2)

Publication Number Publication Date
FR2613548A1 FR2613548A1 (fr) 1988-10-07
FR2613548B1 true FR2613548B1 (fr) 1992-08-07

Family

ID=13704147

Family Applications (1)

Application Number Title Priority Date Filing Date
FR888804296A Expired - Fee Related FR2613548B1 (fr) 1987-03-31 1988-03-31 Laser a semiconducteur

Country Status (4)

Country Link
US (1) US4852112A (fr)
JP (1) JPH0644663B2 (fr)
DE (1) DE3810901A1 (fr)
FR (1) FR2613548B1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750814B2 (ja) * 1988-09-27 1995-05-31 三菱電機株式会社 多点発光型半導体レーザ装置
JPH04154185A (ja) * 1990-10-17 1992-05-27 Mitsubishi Electric Corp 半導体レーザ装置
DE69118482T2 (de) * 1990-11-07 1996-08-22 Fuji Electric Co Ltd Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden Endfläche
US5488623A (en) * 1990-11-07 1996-01-30 Fuji Electric Co., Ltd. Mold-type semiconductor laser device with reduced light-emitting point displacement during operation
JPH0697570A (ja) * 1992-09-14 1994-04-08 Matsushita Electric Ind Co Ltd 半導体レーザー素子端面の反射鏡およびその製造方法
JP3381073B2 (ja) * 1992-09-28 2003-02-24 ソニー株式会社 半導体レーザ装置とその製造方法
US5523590A (en) * 1993-10-20 1996-06-04 Oki Electric Industry Co., Ltd. LED array with insulating films
US5517039A (en) * 1994-11-14 1996-05-14 Hewlett-Packard Company Semiconductor devices fabricated with passivated high aluminum-content III-V material
WO1997010630A1 (fr) * 1995-09-14 1997-03-20 Philips Electronics N.V. Laser a diode a semi-conducteurs et procede de fabrication correspondant
JPH1093193A (ja) 1996-09-10 1998-04-10 Oki Electric Ind Co Ltd 光半導体装置及び光源
US5812580A (en) * 1996-11-05 1998-09-22 Coherent, Inc. Laser diode facet coating
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
JP2002134827A (ja) * 2000-10-27 2002-05-10 Tdk Corp 半導体レーザ及びその製造方法並びにこれを用いた近接場光ヘッド

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178564A (en) * 1976-01-15 1979-12-11 Rca Corporation Half wave protection layers on injection lasers
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
US4280107A (en) * 1979-08-08 1981-07-21 Xerox Corporation Apertured and unapertured reflector structures for electroluminescent devices
JPS5814590A (ja) * 1981-07-17 1983-01-27 Matsushita Electric Ind Co Ltd 半導体レ−ザ
US4731792A (en) * 1983-06-29 1988-03-15 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device with decreased light intensity noise
JPS61207091A (ja) * 1985-03-11 1986-09-13 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
FR2613548A1 (fr) 1988-10-07
JPS63244894A (ja) 1988-10-12
JPH0644663B2 (ja) 1994-06-08
DE3810901A1 (de) 1988-10-27
US4852112A (en) 1989-07-25
DE3810901C2 (fr) 1992-10-08

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse