FR2628891B1 - Laser a semiconducteurs - Google Patents

Laser a semiconducteurs

Info

Publication number
FR2628891B1
FR2628891B1 FR8903480A FR8903480A FR2628891B1 FR 2628891 B1 FR2628891 B1 FR 2628891B1 FR 8903480 A FR8903480 A FR 8903480A FR 8903480 A FR8903480 A FR 8903480A FR 2628891 B1 FR2628891 B1 FR 2628891B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8903480A
Other languages
English (en)
Other versions
FR2628891A1 (fr
Inventor
Ota Et Tetsuya Yagi Yoichiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2628891A1 publication Critical patent/FR2628891A1/fr
Application granted granted Critical
Publication of FR2628891B1 publication Critical patent/FR2628891B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR8903480A 1988-03-16 1989-03-16 Laser a semiconducteurs Expired - Fee Related FR2628891B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63064221A JPH01235397A (ja) 1988-03-16 1988-03-16 半導体レーザ

Publications (2)

Publication Number Publication Date
FR2628891A1 FR2628891A1 (fr) 1989-09-22
FR2628891B1 true FR2628891B1 (fr) 1994-01-07

Family

ID=13251830

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8903480A Expired - Fee Related FR2628891B1 (fr) 1988-03-16 1989-03-16 Laser a semiconducteurs

Country Status (4)

Country Link
US (1) US4916709A (fr)
JP (1) JPH01235397A (fr)
DE (1) DE3908305A1 (fr)
FR (1) FR2628891B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0231487A (ja) * 1988-07-20 1990-02-01 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JPH02203586A (ja) * 1989-02-01 1990-08-13 Mitsubishi Electric Corp 半導体レーザ装置とその製造方法
JP2686306B2 (ja) * 1989-02-01 1997-12-08 三菱電機株式会社 半導体レーザ装置とその製造方法
NL8900748A (nl) * 1989-03-28 1990-10-16 Philips Nv Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
JPH0314281A (ja) * 1989-06-13 1991-01-22 Nec Corp 窓付自己整合型半導体レーザ及びその製造方法
DE4240539C2 (de) * 1992-01-21 1997-07-03 Mitsubishi Electric Corp Verfahren zur Herstellung eines Halbleiterlasers
GB2265252B (en) * 1992-03-17 1995-11-01 Bookham Technology Ltd An electro-optic device
JP3238783B2 (ja) * 1992-07-30 2001-12-17 シャープ株式会社 半導体レーザ素子
JP2002134838A (ja) * 2000-10-30 2002-05-10 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
JPS5654083A (en) * 1979-10-05 1981-05-13 Nec Corp Semiconductor laser apparatus
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS58207690A (ja) * 1982-05-28 1983-12-03 Nec Corp 埋め込み形半導体レ−ザ
JPS59108386A (ja) * 1982-12-14 1984-06-22 Fujitsu Ltd 半導体発光装置
JPS60176287A (ja) * 1984-02-22 1985-09-10 Toshiba Corp ストライプ構造二重ヘテロ接合形レ−ザの製造方法
JPS60192380A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS6151890A (ja) * 1984-08-21 1986-03-14 Toshiba Corp 埋込み型半導体レ−ザの製造方法
DE3435148A1 (de) * 1984-09-25 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit vergrabener aktiver schicht und mit seitlicher strombegrezung durch selbstjustierten pn-uebergang sowie verfahren zur herstellung einer solchen laserdiode
JPS61224387A (ja) * 1985-03-28 1986-10-06 Rikagaku Kenkyusho 半導体装置
JPS63211788A (ja) * 1987-02-27 1988-09-02 Mitsubishi Electric Corp 半導体レ−ザおよびその製造方法
US4821278A (en) * 1987-04-02 1989-04-11 Trw Inc. Inverted channel substrate planar semiconductor laser

Also Published As

Publication number Publication date
US4916709A (en) 1990-04-10
DE3908305A1 (de) 1989-09-28
DE3908305C2 (fr) 1991-02-07
FR2628891A1 (fr) 1989-09-22
JPH01235397A (ja) 1989-09-20

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse