FR2685828B1 - Laser a semiconducteur. - Google Patents

Laser a semiconducteur.

Info

Publication number
FR2685828B1
FR2685828B1 FR9215795A FR9215795A FR2685828B1 FR 2685828 B1 FR2685828 B1 FR 2685828B1 FR 9215795 A FR9215795 A FR 9215795A FR 9215795 A FR9215795 A FR 9215795A FR 2685828 B1 FR2685828 B1 FR 2685828B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9215795A
Other languages
English (en)
Other versions
FR2685828A1 (fr
Inventor
Do-Yol An
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
Gold Star Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gold Star Co Ltd filed Critical Gold Star Co Ltd
Publication of FR2685828A1 publication Critical patent/FR2685828A1/fr
Application granted granted Critical
Publication of FR2685828B1 publication Critical patent/FR2685828B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
FR9215795A 1991-12-28 1992-12-28 Laser a semiconducteur. Expired - Fee Related FR2685828B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910024948A KR950007490B1 (ko) 1991-12-28 1991-12-28 반도체 레이저

Publications (2)

Publication Number Publication Date
FR2685828A1 FR2685828A1 (fr) 1993-07-02
FR2685828B1 true FR2685828B1 (fr) 1994-10-28

Family

ID=19326505

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9215795A Expired - Fee Related FR2685828B1 (fr) 1991-12-28 1992-12-28 Laser a semiconducteur.

Country Status (4)

Country Link
US (1) US5291506A (fr)
JP (1) JP2683195B2 (fr)
KR (1) KR950007490B1 (fr)
FR (1) FR2685828B1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5515393A (en) * 1992-01-29 1996-05-07 Sony Corporation Semiconductor laser with ZnMgSSe cladding layers
US5363395A (en) * 1992-12-28 1994-11-08 North American Philips Corporation Blue-green injection laser structure utilizing II-VI compounds
JPH0783138B2 (ja) * 1993-01-29 1995-09-06 日本電気株式会社 半導体発光素子
US5705831A (en) * 1994-04-07 1998-01-06 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method
DE19703615A1 (de) * 1997-01-31 1998-08-06 Siemens Ag Optoelektronisches Halbleiterbauelement
US7809747B2 (en) 2006-10-23 2010-10-05 Donald Martin Monro Fuzzy database matching
US8253145B2 (en) 2009-04-29 2012-08-28 University Of Seoul Industry Cooperation Foundation Semiconductor device having strong excitonic binding
US8097999B2 (en) 2009-04-27 2012-01-17 University Of Seoul Industry Cooperation Foundation Piezoelectric actuator
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8809834B2 (en) 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176991A (ja) * 1982-04-09 1983-10-17 Sanyo Electric Co Ltd 半導体レ−ザ
WO1987006398A1 (fr) * 1986-04-18 1987-10-22 Bell Communications Research, Inc. Fabrication de laser a semiconducteur
JPS63126288A (ja) * 1986-11-14 1988-05-30 Matsushita Electric Ind Co Ltd 半導体装置
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
DE68914980T2 (de) * 1988-09-01 1994-09-22 Seiko Epson Corp Lichtausstrahlende anordnung und verfahren zur herstellung.
US4922837A (en) * 1988-10-04 1990-05-08 Mcgunn Edward T Safe with color-coded drawers emptying into color-coded containers
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
JPH0391270A (ja) * 1989-09-01 1991-04-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
JPH0828498B2 (ja) * 1989-10-02 1996-03-21 株式会社東芝 半導体素子とその製造方法
US5045897A (en) * 1990-03-14 1991-09-03 Santa Barbara Research Center Quaternary II-VI materials for photonics
US5181221A (en) * 1990-09-12 1993-01-19 Seiko Epson Corporation Surface emission type semiconductor laser

Also Published As

Publication number Publication date
JPH0685401A (ja) 1994-03-25
KR950007490B1 (ko) 1995-07-11
FR2685828A1 (fr) 1993-07-02
JP2683195B2 (ja) 1997-11-26
US5291506A (en) 1994-03-01
KR930015228A (ko) 1993-07-24

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100831