KR930015228A - 반도체 레이저 - Google Patents

반도체 레이저 Download PDF

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Publication number
KR930015228A
KR930015228A KR1019910024948A KR910024948A KR930015228A KR 930015228 A KR930015228 A KR 930015228A KR 1019910024948 A KR1019910024948 A KR 1019910024948A KR 910024948 A KR910024948 A KR 910024948A KR 930015228 A KR930015228 A KR 930015228A
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KR
South Korea
Prior art keywords
layer
semiconductor laser
active layer
laser according
barrier layer
Prior art date
Application number
KR1019910024948A
Other languages
English (en)
Other versions
KR950007490B1 (ko
Inventor
안도열
유태경
Original Assignee
안도열
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 안도열, 이헌조, 주식회사 금성사 filed Critical 안도열
Priority to KR1019910024948A priority Critical patent/KR950007490B1/ko
Priority to FR9215795A priority patent/FR2685828B1/fr
Priority to US07/998,072 priority patent/US5291506A/en
Priority to JP4349571A priority patent/JP2683195B2/ja
Publication of KR930015228A publication Critical patent/KR930015228A/ko
Application granted granted Critical
Publication of KR950007490B1 publication Critical patent/KR950007490B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Abstract

본 발명은 바이액셜 스트레인을 이용한 Ⅱ~Ⅵ족 반도체 청녹 레이저 및 제조방법에 관한 것으로, n-GaAs기판(20)에 n-ZzSSe층(21)과 n-ZnSe층(22)을 차례로 적충하고, 상기 n-ZnSe층에 n형 CdAnSSe 배리어층(23)과 CdZnSe활성층(24) 및 P형 CdZzSSe배리어층(25)을 순차적으로 적충하며, 상기 P형 배리어층에 P-ZnSe(26)과 P-ZnSSe층(27) 및 P-GaAs층(28)을 차례로 적충하여 이루어진 것이다.

Description

반도체 레이저
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 반도체 레이저 단면도,
제2도는 본 발명의 반도체 레이저 단면도,
제3도는 본 발명의 Ⅱ-Ⅵ족 반도체의 격자상수와 밴드갭 표시도,
제4도는 본 발명의 스트레인이 가해질때 밴드구조의 변화 그래프도,
제5도는 본 발명의 스트레인의 광학적 이득변화를 양자 역학적으로 계산한 주입전자수대 이득의 특성 곡선이다.

Claims (5)

  1. n-GaAs기판(20)에 n-ZnSSe층(21)과 n-ZnSe층(22)을 차례로 적충하고, 상기 (Cd,S)Zn(Se,Te)화합물로된 활성층과 상기 활성층보다 높은 밴드갭과 격자간격을 갖는 (Cd,S)Zn(Se,Te)화합로 조성되어 상기 활성층 상하부에 적충되는베리어층을 갖는 이중헤테로구조를 포함하는 반도체 레이저.
  2. 제1항에 있어서, 상기 활성층은 청녹색파장 480~550㎚대에 밴드갭을 갖는 바이액셜 스트레인의 Ⅱ-Ⅵ족 반도체 (Cd,Zn,S)Se로 적충한 것을 특징으로 하는 레이저.
  3. 제1항 또는 제2항에 있어서, 상기 활성층의 두께는 탄성한계 50~300Å으로 정의된 것을 특징으로 하는 반도체 레이저.
  4. 제1항에 있어서, 상기 배리어층은 스트레인된 층으로 100Å~1㎛두께로 정의된 것을 특징으로 하는 반도체 레이저.
  5. 제1항에 있어서, 상기 활성층의 격자간격aA은 상기 배리어층의 격자간격aB보다 큰것(aA〉aB)을 특징으로 하는 반도체 레이저.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910024948A 1991-12-28 1991-12-28 반도체 레이저 KR950007490B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019910024948A KR950007490B1 (ko) 1991-12-28 1991-12-28 반도체 레이저
FR9215795A FR2685828B1 (fr) 1991-12-28 1992-12-28 Laser a semiconducteur.
US07/998,072 US5291506A (en) 1991-12-28 1992-12-28 Semiconductor laser made of group II-VI compounds
JP4349571A JP2683195B2 (ja) 1991-12-28 1992-12-28 半導体レーザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910024948A KR950007490B1 (ko) 1991-12-28 1991-12-28 반도체 레이저

Publications (2)

Publication Number Publication Date
KR930015228A true KR930015228A (ko) 1993-07-24
KR950007490B1 KR950007490B1 (ko) 1995-07-11

Family

ID=19326505

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910024948A KR950007490B1 (ko) 1991-12-28 1991-12-28 반도체 레이저

Country Status (4)

Country Link
US (1) US5291506A (ko)
JP (1) JP2683195B2 (ko)
KR (1) KR950007490B1 (ko)
FR (1) FR2685828B1 (ko)

Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
US5515393A (en) * 1992-01-29 1996-05-07 Sony Corporation Semiconductor laser with ZnMgSSe cladding layers
US5363395A (en) * 1992-12-28 1994-11-08 North American Philips Corporation Blue-green injection laser structure utilizing II-VI compounds
JPH0783138B2 (ja) * 1993-01-29 1995-09-06 日本電気株式会社 半導体発光素子
US5705831A (en) * 1994-04-07 1998-01-06 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method
DE19703615A1 (de) * 1997-01-31 1998-08-06 Siemens Ag Optoelektronisches Halbleiterbauelement
US7809747B2 (en) 2006-10-23 2010-10-05 Donald Martin Monro Fuzzy database matching
US8097999B2 (en) 2009-04-27 2012-01-17 University Of Seoul Industry Cooperation Foundation Piezoelectric actuator
US8253145B2 (en) 2009-04-29 2012-08-28 University Of Seoul Industry Cooperation Foundation Semiconductor device having strong excitonic binding
US8809834B2 (en) 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8227793B2 (en) 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8368990B2 (en) 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176991A (ja) * 1982-04-09 1983-10-17 Sanyo Electric Co Ltd 半導体レ−ザ
WO1987006398A1 (en) * 1986-04-18 1987-10-22 Bell Communications Research, Inc. Semiconductor laser fabrication
JPS63126288A (ja) * 1986-11-14 1988-05-30 Matsushita Electric Ind Co Ltd 半導体装置
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
JP2544378B2 (ja) * 1987-03-25 1996-10-16 株式会社日立製作所 光半導体装置
WO1990003055A1 (en) * 1988-09-01 1990-03-22 Seiko Epson Corporation Light emitting device and method of producing the same
US4922837A (en) * 1988-10-04 1990-05-08 Mcgunn Edward T Safe with color-coded drawers emptying into color-coded containers
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
JPH0391270A (ja) * 1989-09-01 1991-04-16 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体発光素子
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
JPH0828498B2 (ja) * 1989-10-02 1996-03-21 株式会社東芝 半導体素子とその製造方法
US5045897A (en) * 1990-03-14 1991-09-03 Santa Barbara Research Center Quaternary II-VI materials for photonics
US5181221A (en) * 1990-09-12 1993-01-19 Seiko Epson Corporation Surface emission type semiconductor laser

Also Published As

Publication number Publication date
JP2683195B2 (ja) 1997-11-26
JPH0685401A (ja) 1994-03-25
FR2685828B1 (fr) 1994-10-28
FR2685828A1 (fr) 1993-07-02
KR950007490B1 (ko) 1995-07-11
US5291506A (en) 1994-03-01

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