FR2684498B1 - Laser a semiconducteurs a reaction repartie. - Google Patents

Laser a semiconducteurs a reaction repartie.

Info

Publication number
FR2684498B1
FR2684498B1 FR929213982A FR9213982A FR2684498B1 FR 2684498 B1 FR2684498 B1 FR 2684498B1 FR 929213982 A FR929213982 A FR 929213982A FR 9213982 A FR9213982 A FR 9213982A FR 2684498 B1 FR2684498 B1 FR 2684498B1
Authority
FR
France
Prior art keywords
semiconductor laser
distributed reaction
distributed
reaction
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR929213982A
Other languages
English (en)
Other versions
FR2684498A1 (fr
Inventor
Yagi Tetsuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2684498A1 publication Critical patent/FR2684498A1/fr
Application granted granted Critical
Publication of FR2684498B1 publication Critical patent/FR2684498B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR929213982A 1991-11-21 1992-11-20 Laser a semiconducteurs a reaction repartie. Expired - Fee Related FR2684498B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3305875A JP2705409B2 (ja) 1991-11-21 1991-11-21 半導体分布帰還形レーザ装置

Publications (2)

Publication Number Publication Date
FR2684498A1 FR2684498A1 (fr) 1993-06-04
FR2684498B1 true FR2684498B1 (fr) 1994-10-14

Family

ID=17950393

Family Applications (1)

Application Number Title Priority Date Filing Date
FR929213982A Expired - Fee Related FR2684498B1 (fr) 1991-11-21 1992-11-20 Laser a semiconducteurs a reaction repartie.

Country Status (4)

Country Link
US (1) US5363399A (fr)
JP (1) JP2705409B2 (fr)
CA (1) CA2083188A1 (fr)
FR (1) FR2684498B1 (fr)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2713350B1 (fr) * 1993-12-06 1995-12-29 Franck Delorme Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.
FR2715251B1 (fr) * 1994-01-20 1996-04-05 Christophe Kazmierski Structure semiconductrice à réseau de diffraction virtuel.
FR2716303B1 (fr) * 1994-02-11 1996-04-05 Franck Delorme Laser à réflecteurs de Bragg distribués, accordable en longueur d'onde, à réseaux de diffraction virtuels activés sélectivement.
JP4017196B2 (ja) * 1995-03-22 2007-12-05 シャープ株式会社 分布帰還型半導体レーザ装置
JPH0969671A (ja) * 1995-08-30 1997-03-11 Canon Inc 偏波変調可能な分布帰還型半導体レーザ
US5727013A (en) * 1995-10-27 1998-03-10 Wisconsin Alumni Research Foundation Single lobe surface emitting complex coupled distributed feedback semiconductor laser
JP3714430B2 (ja) * 1996-04-15 2005-11-09 シャープ株式会社 分布帰還型半導体レーザ装置
US6026110A (en) * 1997-10-16 2000-02-15 Nortel Networks Corporation Distributed feedback semiconductor laser with gain modulation
US6195381B1 (en) 1998-04-27 2001-02-27 Wisconsin Alumni Research Foundation Narrow spectral width high-power distributed feedback semiconductor lasers
US6501777B1 (en) * 1999-01-29 2002-12-31 Nec Corporation Distributed feedback semiconductor laser emitting device having asymmetrical diffraction gratings
US6574256B1 (en) * 2000-01-18 2003-06-03 Xerox Corporation Distributed feedback laser fabricated by lateral overgrowth of an active region
US6611544B1 (en) 2000-04-11 2003-08-26 E20 Communications, Inc. Method and apparatus for narrow bandwidth distributed bragg reflector semiconductor lasers
KR102007402B1 (ko) * 2012-08-06 2019-08-05 엘지이노텍 주식회사 발광소자

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445218A (en) * 1981-09-28 1984-04-24 Bell Telephone Laboratories, Incorporated Semiconductor laser with conductive current mask
JPS58196088A (ja) * 1982-05-12 1983-11-15 Hitachi Ltd 半導体レ−ザ素子
JPS6025287A (ja) * 1983-07-20 1985-02-08 Matsushita Electric Ind Co Ltd 化合物半導体装置およびその製造方法
JPS60247986A (ja) * 1984-05-23 1985-12-07 Fujitsu Ltd 分布帰還型半導体レ−ザ
US4622673A (en) * 1984-05-24 1986-11-11 At&T Bell Laboratories Heteroepitaxial ridge overgrown laser
US4716570A (en) * 1985-01-10 1987-12-29 Sharp Kabushiki Kaisha Distributed feedback semiconductor laser device
JPS61182295A (ja) * 1985-02-07 1986-08-14 Sharp Corp 半導体レ−ザ装置
US4722092A (en) * 1985-01-30 1988-01-26 Massachusetts Institute Of Technology GaInAsP/InP distributed feedback laser
JPS622585A (ja) * 1985-06-27 1987-01-08 Mitsubishi Electric Corp 半導体レ−ザ
JPS62166582A (ja) * 1986-01-20 1987-07-23 Sony Corp 分布帰還型半導体レ−ザ及びその製造方法
JPS62189785A (ja) * 1986-02-17 1987-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布ブラツグ反射器を有する半導体装置
JP2606838B2 (ja) * 1987-03-27 1997-05-07 三菱電機株式会社 分布帰還型半導体レーザ
JPH02296386A (ja) * 1989-05-10 1990-12-06 Mitsubishi Electric Corp 半導体レーザ
JP2619057B2 (ja) * 1989-05-22 1997-06-11 三菱電機株式会社 半導体レーザの製造方法
DE69027368T2 (de) * 1989-06-30 1997-01-30 Optical Measurement Technology Halbleiterlaser und Verfahren zur Herstellung desselben
US5170405A (en) * 1991-02-06 1992-12-08 Eastman Kodak Company Semiconductor diode laser having smaller beam divergence
JPH07118563B2 (ja) * 1991-08-22 1995-12-18 光計測技術開発株式会社 半導体分布帰還型レーザ装置
JPH1124279A (ja) * 1997-07-07 1999-01-29 Fuji Photo Film Co Ltd 印刷版の露光方法
EP1124279A1 (fr) * 2000-02-08 2001-08-16 Hewlett-Packard Company, A Delaware Corporation Carte pour transmission sans fil

Also Published As

Publication number Publication date
JPH05145175A (ja) 1993-06-11
JP2705409B2 (ja) 1998-01-28
FR2684498A1 (fr) 1993-06-04
US5363399A (en) 1994-11-08
CA2083188A1 (fr) 1993-05-22

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Legal Events

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ST Notification of lapse