DE68912681T2 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE68912681T2
DE68912681T2 DE68912681T DE68912681T DE68912681T2 DE 68912681 T2 DE68912681 T2 DE 68912681T2 DE 68912681 T DE68912681 T DE 68912681T DE 68912681 T DE68912681 T DE 68912681T DE 68912681 T2 DE68912681 T2 DE 68912681T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE68912681T
Other languages
English (en)
Other versions
DE68912681D1 (de
Inventor
Ronan Feargus O'dowd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ELECTRO OPTIC LOGIC Ltd
Original Assignee
ELECTRO OPTIC LOGIC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from IE243488A external-priority patent/IE62336B1/en
Application filed by ELECTRO OPTIC LOGIC Ltd filed Critical ELECTRO OPTIC LOGIC Ltd
Application granted granted Critical
Publication of DE68912681D1 publication Critical patent/DE68912681D1/de
Publication of DE68912681T2 publication Critical patent/DE68912681T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04J—MULTIPLEX COMMUNICATION
    • H04J14/00—Optical multiplex systems
    • H04J14/02—Wavelength-division multiplex systems
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04J—MULTIPLEX COMMUNICATION
    • H04J14/00—Optical multiplex systems
    • H04J14/08—Time-division multiplex systems
DE68912681T 1988-08-10 1989-08-09 Halbleiterlaser. Expired - Lifetime DE68912681T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IE243488A IE62336B1 (en) 1988-08-10 1988-08-10 Improvements in and relating to semiconductor lasers
IE365388 1988-12-08

Publications (2)

Publication Number Publication Date
DE68912681D1 DE68912681D1 (de) 1994-03-10
DE68912681T2 true DE68912681T2 (de) 1994-08-04

Family

ID=26319258

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68912681T Expired - Lifetime DE68912681T2 (de) 1988-08-10 1989-08-09 Halbleiterlaser.

Country Status (5)

Country Link
US (1) US4972352A (de)
EP (1) EP0354776B1 (de)
JP (1) JPH088389B2 (de)
DE (1) DE68912681T2 (de)
GB (1) GB2222022B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040183A (en) * 1990-07-20 1991-08-13 At&T Bell Laboratories Apparatus comprising optical pulse-generating means
DE19534937C1 (de) * 1995-09-20 1996-12-05 Siemens Ag Wellenlängenabstimmbare Laservorrichtung
US6744987B1 (en) * 2000-04-17 2004-06-01 Delphi Technologies, Inc Tertiary optical media interface
GB2373369A (en) * 2001-03-12 2002-09-18 Univ Bristol Laser diodes
CN110050394B (zh) * 2016-12-09 2021-01-12 古河电气工业株式会社 脉冲激光装置、加工装置及脉冲激光装置的控制方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504302A (en) * 1964-09-24 1970-03-31 Gen Electric Frequency controlled semiconductor junction laser
US3477041A (en) * 1968-06-05 1969-11-04 Rca Corp Production of amplitude modulated light by a solid state oscillator
US3724926A (en) * 1971-08-09 1973-04-03 Bell Telephone Labor Inc Optical pulse modulator
JPS59101961A (ja) * 1982-12-03 1984-06-12 Hitachi Ltd レ−ザ変調回路
JPS59188988A (ja) * 1983-04-11 1984-10-26 Nec Corp 半導体レ−ザおよびその駆動方法
JPS6079788A (ja) * 1983-10-06 1985-05-07 Nec Corp 光双安定素子
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
JPS61107781A (ja) * 1984-10-30 1986-05-26 Nec Corp 単一軸モ−ド半導体レ−ザ装置
JPH0626276B2 (ja) * 1985-01-14 1994-04-06 日本電気株式会社 レ−ザ光直接周波数変調方法
US4748630A (en) * 1985-01-17 1988-05-31 Nec Corporation Optical memory device comprising a semiconductor laser having bistability and two injection current sources for individually controlling the bistability
US4674096A (en) * 1985-03-04 1987-06-16 California Institute Of Technology Lateral coupled cavity semiconductor laser
US4719632A (en) * 1985-06-19 1988-01-12 California Institute Of Technology Single contact tailored gain chirped arrays of diode lasers for supermode control with single-lobed farfield patterns
US4893353A (en) * 1985-12-20 1990-01-09 Yokogawa Electric Corporation Optical frequency synthesizer/sweeper
FR2598862B1 (fr) * 1986-05-16 1994-04-08 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
GB2197531B (en) * 1986-11-08 1991-02-06 Stc Plc Distributed feedback laser
US4796269A (en) * 1987-05-22 1989-01-03 Oregon Graduate Center Two-dimensional phase-locked surface emitting semiconductor laser array

Also Published As

Publication number Publication date
US4972352A (en) 1990-11-20
JPH088389B2 (ja) 1996-01-29
GB2222022B (en) 1993-03-17
GB8918155D0 (en) 1989-09-20
EP0354776A2 (de) 1990-02-14
EP0354776A3 (en) 1990-07-11
JPH02100385A (ja) 1990-04-12
DE68912681D1 (de) 1994-03-10
EP0354776B1 (de) 1994-01-26
GB2222022A (en) 1990-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee