DE68910614T2 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number
DE68910614T2
DE68910614T2 DE89308335T DE68910614T DE68910614T2 DE 68910614 T2 DE68910614 T2 DE 68910614T2 DE 89308335 T DE89308335 T DE 89308335T DE 68910614 T DE68910614 T DE 68910614T DE 68910614 T2 DE68910614 T2 DE 68910614T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89308335T
Other languages
English (en)
Other versions
DE68910614D1 (de
Inventor
Hiroaki Kudo
Haruhisa Takiguchi
Chitose Sakane
Satoshi Sugahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE68910614D1 publication Critical patent/DE68910614D1/de
Publication of DE68910614T2 publication Critical patent/DE68910614T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
DE89308335T 1988-08-17 1989-08-16 Halbleiterlaser. Expired - Fee Related DE68910614T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63204231A JPH0642583B2 (ja) 1988-08-17 1988-08-17 半導体レーザ装置

Publications (2)

Publication Number Publication Date
DE68910614D1 DE68910614D1 (de) 1993-12-16
DE68910614T2 true DE68910614T2 (de) 1994-03-03

Family

ID=16487016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89308335T Expired - Fee Related DE68910614T2 (de) 1988-08-17 1989-08-16 Halbleiterlaser.

Country Status (4)

Country Link
US (1) US5027368A (de)
EP (1) EP0356135B1 (de)
JP (1) JPH0642583B2 (de)
DE (1) DE68910614T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5170405A (en) * 1991-02-06 1992-12-08 Eastman Kodak Company Semiconductor diode laser having smaller beam divergence
US5295150A (en) * 1992-12-11 1994-03-15 Eastman Kodak Company Distributed feedback-channeled substrate planar semiconductor laser
JP2002043785A (ja) 2000-07-28 2002-02-08 Murata Mfg Co Ltd シールドケース及びそれを用いた電子機器及びそれを用いた電子装置及びシールドケースの製造方法
CN108933382B (zh) * 2018-06-21 2019-12-20 武汉光迅科技股份有限公司 一种光栅、dbr激光器及光栅制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247986A (ja) * 1984-05-23 1985-12-07 Fujitsu Ltd 分布帰還型半導体レ−ザ
US4716570A (en) * 1985-01-10 1987-12-29 Sharp Kabushiki Kaisha Distributed feedback semiconductor laser device
US4740987A (en) * 1986-06-30 1988-04-26 American Telephone And Telegraph Company, At&T Bell Laboratories Distributed-feedback laser having enhanced mode selectivity
JPS63285993A (ja) * 1987-05-18 1988-11-22 Sharp Corp 半導体レ−ザ装置

Also Published As

Publication number Publication date
EP0356135B1 (de) 1993-11-10
JPH0642583B2 (ja) 1994-06-01
EP0356135A2 (de) 1990-02-28
JPH0252481A (ja) 1990-02-22
US5027368A (en) 1991-06-25
DE68910614D1 (de) 1993-12-16
EP0356135A3 (en) 1990-09-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee