DE68910614D1 - Halbleiterlaser. - Google Patents
Halbleiterlaser.Info
- Publication number
- DE68910614D1 DE68910614D1 DE89308335T DE68910614T DE68910614D1 DE 68910614 D1 DE68910614 D1 DE 68910614D1 DE 89308335 T DE89308335 T DE 89308335T DE 68910614 T DE68910614 T DE 68910614T DE 68910614 D1 DE68910614 D1 DE 68910614D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63204231A JPH0642583B2 (ja) | 1988-08-17 | 1988-08-17 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68910614D1 true DE68910614D1 (de) | 1993-12-16 |
DE68910614T2 DE68910614T2 (de) | 1994-03-03 |
Family
ID=16487016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89308335T Expired - Fee Related DE68910614T2 (de) | 1988-08-17 | 1989-08-16 | Halbleiterlaser. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5027368A (de) |
EP (1) | EP0356135B1 (de) |
JP (1) | JPH0642583B2 (de) |
DE (1) | DE68910614T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5170405A (en) * | 1991-02-06 | 1992-12-08 | Eastman Kodak Company | Semiconductor diode laser having smaller beam divergence |
US5295150A (en) * | 1992-12-11 | 1994-03-15 | Eastman Kodak Company | Distributed feedback-channeled substrate planar semiconductor laser |
JP2002043785A (ja) | 2000-07-28 | 2002-02-08 | Murata Mfg Co Ltd | シールドケース及びそれを用いた電子機器及びそれを用いた電子装置及びシールドケースの製造方法 |
CN108933382B (zh) * | 2018-06-21 | 2019-12-20 | 武汉光迅科技股份有限公司 | 一种光栅、dbr激光器及光栅制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60247986A (ja) * | 1984-05-23 | 1985-12-07 | Fujitsu Ltd | 分布帰還型半導体レ−ザ |
US4716570A (en) * | 1985-01-10 | 1987-12-29 | Sharp Kabushiki Kaisha | Distributed feedback semiconductor laser device |
US4740987A (en) * | 1986-06-30 | 1988-04-26 | American Telephone And Telegraph Company, At&T Bell Laboratories | Distributed-feedback laser having enhanced mode selectivity |
JPS63285993A (ja) * | 1987-05-18 | 1988-11-22 | Sharp Corp | 半導体レ−ザ装置 |
-
1988
- 1988-08-17 JP JP63204231A patent/JPH0642583B2/ja not_active Expired - Fee Related
-
1989
- 1989-08-16 EP EP89308335A patent/EP0356135B1/de not_active Expired - Lifetime
- 1989-08-16 DE DE89308335T patent/DE68910614T2/de not_active Expired - Fee Related
- 1989-08-16 US US07/394,327 patent/US5027368A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0642583B2 (ja) | 1994-06-01 |
EP0356135B1 (de) | 1993-11-10 |
JPH0252481A (ja) | 1990-02-22 |
US5027368A (en) | 1991-06-25 |
DE68910614T2 (de) | 1994-03-03 |
EP0356135A2 (de) | 1990-02-28 |
EP0356135A3 (en) | 1990-09-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |