DE68909747D1 - Abstimmbarer Halbleiterlaser. - Google Patents

Abstimmbarer Halbleiterlaser.

Info

Publication number
DE68909747D1
DE68909747D1 DE89121469T DE68909747T DE68909747D1 DE 68909747 D1 DE68909747 D1 DE 68909747D1 DE 89121469 T DE89121469 T DE 89121469T DE 68909747 T DE68909747 T DE 68909747T DE 68909747 D1 DE68909747 D1 DE 68909747D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
tunable semiconductor
tunable
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89121469T
Other languages
English (en)
Other versions
DE68909747T2 (de
Inventor
Philippe Brosson
Joel Jacquet
Claude Artigue
Daniel Leclerc
Jacques Benoit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
Alcatel NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel NV filed Critical Alcatel NV
Publication of DE68909747D1 publication Critical patent/DE68909747D1/de
Application granted granted Critical
Publication of DE68909747T2 publication Critical patent/DE68909747T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE89121469T 1988-11-25 1989-11-20 Abstimmbarer Halbleiterlaser. Expired - Fee Related DE68909747T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8815467A FR2639773B1 (fr) 1988-11-25 1988-11-25 Laser a semi-conducteur accordable

Publications (2)

Publication Number Publication Date
DE68909747D1 true DE68909747D1 (de) 1993-11-11
DE68909747T2 DE68909747T2 (de) 1994-01-27

Family

ID=9372275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89121469T Expired - Fee Related DE68909747T2 (de) 1988-11-25 1989-11-20 Abstimmbarer Halbleiterlaser.

Country Status (5)

Country Link
US (1) US4920542A (de)
EP (1) EP0370443B1 (de)
JP (1) JP2776922B2 (de)
DE (1) DE68909747T2 (de)
FR (1) FR2639773B1 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8803080A (nl) * 1988-12-16 1990-07-16 Philips Nv Verstembare halfgeleiderdiodelaser met verdeelde reflectie en vervaardigingswijze van een dergelijke halfgeleiderdiodelaser.
EP0383958B1 (de) * 1989-02-15 1993-06-02 Siemens Aktiengesellschaft Abstimmbarer Halbleiterlaser
JPH0315742A (ja) * 1989-03-23 1991-01-24 Anritsu Corp ガス検出装置
US5177758A (en) * 1989-06-14 1993-01-05 Hitachi, Ltd. Semiconductor laser device with plural active layers and changing optical properties
US5088097A (en) * 1990-04-04 1992-02-11 Canon Kabushiki Kaisha Semiconductor laser element capable of changing emission wavelength, and method of driving the same
JPH0457384A (ja) * 1990-06-27 1992-02-25 Mitsubishi Electric Corp 半導体レーザ
US5070509A (en) * 1990-08-09 1991-12-03 Eastman Kodak Company Surface emitting, low threshold (SELTH) laser diode
DE69115624T2 (de) * 1990-09-28 1996-05-15 Nippon Electric Co Schaltung und Elektrodenanordnung zur Erzeugung einer breitbandigen Frequenzmodulationscharakteristik in Halbleiterlasern
NL9100103A (nl) * 1991-01-23 1992-08-17 Philips Nv Halfgeleiderdiodelaser met monitordiode.
EP0498736A3 (en) * 1991-02-08 1993-04-14 Fujitsu Limited Dfb laser diode having a modified profile of linewidth enhancement factor
FR2673333A1 (fr) * 1991-02-27 1992-08-28 Alsthom Cge Alcatel Laser semiconducteur a absorbeur saturable.
EP0529732B1 (de) * 1991-08-30 1994-11-09 Koninklijke Philips Electronics N.V. Abstimmbarer Laseroszillator
FR2700643B1 (fr) * 1993-01-19 1995-02-24 Alcatel Nv Source semi-conductrice d'impulsions optiques à commutation de gain et système de transmission à solitons.
JP3285426B2 (ja) * 1993-08-04 2002-05-27 株式会社日立製作所 半導体光集積素子及びその製造方法
US5371757A (en) * 1993-10-22 1994-12-06 The United States Of America As Represented By The Secretary Of The Air Force Integrated semiconductor laser oscillator and off-axis amplifier
EP0692853B1 (de) * 1994-07-15 1998-09-30 Nec Corporation Wellenlängenabstimmbarer Halbleiterlaser
FR2734676B1 (fr) * 1995-05-23 1997-08-08 Labeyrie Antoine Procede et dispositifs d'emission ou reception laser pour la transmission d'informations par voie optique
EP0825689A3 (de) * 1996-08-22 2001-05-09 Canon Kabushiki Kaisha Optische Vorrichtung zur Schaltung polarisierten Ausgangslichtes, optischer Sender unter Verwendung derselben, und Verfahren zur Steuerung einer optischen Vorrichtung
US5832014A (en) * 1997-02-11 1998-11-03 Lucent Technologies Inc. Wavelength stabilization in tunable semiconductor lasers
JP3404242B2 (ja) * 1997-02-14 2003-05-06 日本電気株式会社 波長可変半導体レーザの駆動方法及び波長可変光源装置
SE518827C2 (sv) * 1999-02-17 2002-11-26 Altitun Ab Metod för karakterisering av en avstämbar laser
US6088373A (en) * 1999-02-17 2000-07-11 Lucent Technologies Inc. Hybrid tunable Bragg laser
JP2002043698A (ja) * 1999-12-22 2002-02-08 Yokogawa Electric Corp Ｓｈｇレーザ光源及びｓｈｇレーザ光源の変調方法
EP1172905A1 (de) * 2000-07-11 2002-01-16 Interuniversitair Microelektronica Centrum Vzw Verfahren und Vorrichtung zur Kontrolle einer Laserstruktur
EP1223647A1 (de) * 2001-01-12 2002-07-17 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren und Vorrichtung zur Kontrolle einer Laserstruktur
FR2812769B1 (fr) * 2000-08-04 2003-08-29 Cit Alcatel Laser accordable en semi-conducteur a emission par la tranche
US6728290B1 (en) * 2000-09-13 2004-04-27 The Board Of Trustees Of The University Of Illinois Current biased dual DBR grating semiconductor laser
GB2369491A (en) * 2000-11-28 2002-05-29 Kamelian Ltd Tunable semiconductor laser
US7831151B2 (en) * 2001-06-29 2010-11-09 John Trezza Redundant optical device array
EP1396913A1 (de) * 2002-09-03 2004-03-10 Agilent Technologies, Inc. - a Delaware corporation - Einzelmodelaser mit verteilter Rückkopplung
CN100372134C (zh) * 2003-07-23 2008-02-27 厦门市三安光电股份有限公司 一种可用于发光二极管的布拉格反射体结构
US7573928B1 (en) * 2003-09-05 2009-08-11 Santur Corporation Semiconductor distributed feedback (DFB) laser array with integrated attenuator
JP4579033B2 (ja) * 2005-03-31 2010-11-10 富士通株式会社 光半導体装置とその駆動方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155983A (ja) * 1983-02-24 1984-09-05 Sharp Corp 半導体レ−ザ素子の製造方法
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置
US4775980A (en) * 1983-12-14 1988-10-04 Hitachi, Ltd. Distributed-feedback semiconductor laser device
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
JPS6179283A (ja) * 1984-09-26 1986-04-22 Nec Corp 分布ブラツグ反射型半導体レ−ザ
US4680769A (en) * 1984-11-21 1987-07-14 Bell Communications Research, Inc. Broadband laser amplifier structure
JPS61220389A (ja) * 1985-03-26 1986-09-30 Nec Corp 集積型半導体レ−ザ
FR2586874B1 (fr) * 1985-08-29 1988-08-05 Comp Generale Electricite Dispositif de telecommunication par fibres optiques.
JPH06105820B2 (ja) * 1985-12-25 1994-12-21 国際電信電話株式会社 モニタ付分布帰還形半導体レ−ザ
FR2598862B1 (fr) * 1986-05-16 1994-04-08 Bouley Jean Claude Laser a semi-conducteur a reaction distribuee et a longueur d'onde continument accordable.
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JP2526898B2 (ja) * 1987-05-08 1996-08-21 三菱電機株式会社 半導体レ−ザおよびその使用方法
JPH0831653B2 (ja) * 1987-07-21 1996-03-27 国際電信電話株式会社 半導体レ−ザ

Also Published As

Publication number Publication date
FR2639773B1 (fr) 1994-05-13
JPH02188985A (ja) 1990-07-25
JP2776922B2 (ja) 1998-07-16
US4920542A (en) 1990-04-24
EP0370443A1 (de) 1990-05-30
EP0370443B1 (de) 1993-10-06
DE68909747T2 (de) 1994-01-27
FR2639773A1 (fr) 1990-06-01

Similar Documents

Publication Publication Date Title
DE68909747D1 (de) Abstimmbarer Halbleiterlaser.
DE3751549D1 (de) Halbleiterlaser.
DE68915673D1 (de) Halbleiterlaser-Vorrichtung.
DE68913524D1 (de) Laserüberschallöten.
DE68912429D1 (de) Halbleiterlaser-Vielfachanordnungen.
DE68918884D1 (de) Halbleiterlaser-Vorrichtung.
DE68908646D1 (de) Halbleiterlaser.
DE69004005D1 (de) Laser.
DE59306825D1 (de) Durchstimmbarer Halbeiterlaser
DE3873689D1 (de) Halbleiterlaser.
DE3884503D1 (de) Halbleiterlaser.
DE69102240D1 (de) Abstimmbarer Halbleiterlaser.
DE68912852D1 (de) Halbleiterlaser.
DE68912512D1 (de) Halbleiterlaser-Vorrichtung.
DE3778510D1 (de) Halbleiterlaser.
DE58906978D1 (de) Abstimmbarer DFB-Laser.
DE68910492D1 (de) Halbleiterlaservorrichtung.
DE69018732D1 (de) Halbleiterlaser.
NO872195L (no) Laseranordning.
DE3850139D1 (de) Halbleiterlaser mit variabler Oszillationswellenlänge.
DE69005132D1 (de) Halbleiterlaser.
DE58904573D1 (de) Abstimmbarer halbleiterlaser.
DE69009266D1 (de) Halbleiterlaser-Vorrichtung.
DE59004315D1 (de) Elektrisch wellenlängenabstimmbarer Halbleiterlaser.
DE69021151D1 (de) Halbleiterlaser-Vorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP., FREMONT, CALIF., US

8339 Ceased/non-payment of the annual fee