DE69102240D1 - Abstimmbarer Halbleiterlaser. - Google Patents

Abstimmbarer Halbleiterlaser.

Info

Publication number
DE69102240D1
DE69102240D1 DE69102240T DE69102240T DE69102240D1 DE 69102240 D1 DE69102240 D1 DE 69102240D1 DE 69102240 T DE69102240 T DE 69102240T DE 69102240 T DE69102240 T DE 69102240T DE 69102240 D1 DE69102240 D1 DE 69102240D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
tunable semiconductor
tunable
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69102240T
Other languages
English (en)
Other versions
DE69102240T2 (de
Inventor
Masayoshi Horita
Katsuyuki Utaka
Yuichi Matsushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Publication of DE69102240D1 publication Critical patent/DE69102240D1/de
Application granted granted Critical
Publication of DE69102240T2 publication Critical patent/DE69102240T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69102240T 1990-10-11 1991-10-09 Abstimmbarer Halbleiterlaser. Expired - Fee Related DE69102240T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2270522A JP2804838B2 (ja) 1990-10-11 1990-10-11 波長可変半導体レーザ

Publications (2)

Publication Number Publication Date
DE69102240D1 true DE69102240D1 (de) 1994-07-07
DE69102240T2 DE69102240T2 (de) 1995-01-12

Family

ID=17487396

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69102240T Expired - Fee Related DE69102240T2 (de) 1990-10-11 1991-10-09 Abstimmbarer Halbleiterlaser.

Country Status (4)

Country Link
US (1) US5187717A (de)
EP (1) EP0480697B1 (de)
JP (1) JP2804838B2 (de)
DE (1) DE69102240T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247536A (en) * 1990-07-25 1993-09-21 Kabushiki Kaisha Toshiba Semiconductor laser distributed feedback laser including mode interrupt means
US5325392A (en) * 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
US5347526A (en) * 1992-03-31 1994-09-13 Kabushiki Kaisha Toshiba Wavelength-tunable semiconductor laser
DE4301830A1 (de) * 1993-01-23 1994-07-28 Ant Nachrichtentech 3-Sektions-DFB-Halbleiterlaser mit erweitertem Wellenlängen-Durchstimmungsbereich
JP2770714B2 (ja) * 1993-09-10 1998-07-02 日本電気株式会社 分布帰還型半導体レーザおよびその電流注入方法
US6728290B1 (en) * 2000-09-13 2004-04-27 The Board Of Trustees Of The University Of Illinois Current biased dual DBR grating semiconductor laser
WO2002075867A2 (en) * 2001-03-19 2002-09-26 Bookham Technology Tuneable laser
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
GB2381123B (en) * 2001-10-17 2005-02-23 Marconi Optical Components Ltd Tuneable laser
JP4594816B2 (ja) * 2005-03-17 2010-12-08 富士通株式会社 波長可変レーザ
JP4231854B2 (ja) * 2005-03-17 2009-03-04 アンリツ株式会社 半導体レーザ素子及びガス検知装置
US7366220B2 (en) 2005-03-17 2008-04-29 Fujitsu Limited Tunable laser
JP4469759B2 (ja) * 2005-03-17 2010-05-26 富士通株式会社 波長可変レーザ
JP4579033B2 (ja) * 2005-03-31 2010-11-10 富士通株式会社 光半導体装置とその駆動方法
JP4904874B2 (ja) * 2006-03-24 2012-03-28 富士通株式会社 波長可変レーザ
JP2008085214A (ja) * 2006-09-28 2008-04-10 Fujitsu Ltd 波長可変レーザ
JP4926641B2 (ja) * 2006-10-18 2012-05-09 日本電信電話株式会社 半導体レーザ
WO2008120375A1 (ja) 2007-03-29 2008-10-09 Fujitsu Limited 光伝送装置および光伝送方法
JP5625459B2 (ja) * 2009-05-21 2014-11-19 住友電気工業株式会社 半導体レーザ素子及びその作製方法
CN112448266B (zh) * 2019-08-30 2022-03-25 华为技术有限公司 一种多波长激光器以及波长控制方法
CN112542769B (zh) * 2020-10-20 2022-04-08 武汉敏芯半导体股份有限公司 宽谱多波长法布里-珀罗激光器及其制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6045088A (ja) * 1983-08-23 1985-03-11 Fujitsu Ltd 半導体発光装置
DE3706866A1 (de) * 1987-03-04 1988-09-15 Licentia Gmbh Dfb-halbleiterlaser
JPH0656908B2 (ja) * 1987-03-31 1994-07-27 日本電信電話株式会社 波長変換素子
JP2563196B2 (ja) * 1988-03-11 1996-12-11 日本電信電話株式会社 結合分布帰還型半導体レーザ
US4835779A (en) * 1987-05-04 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Method and apparatus for the operation of a distributed feedback laser
JPS6414988A (en) * 1987-07-08 1989-01-19 Nec Corp Wavelength-tunable semiconductor laser
JP2825508B2 (ja) * 1987-10-09 1998-11-18 株式会社日立製作所 半導体レーザ装置および光通信システム
JPH084186B2 (ja) * 1987-10-28 1996-01-17 国際電信電話株式会社 半導体レーザ
JP2544410B2 (ja) * 1987-11-11 1996-10-16 株式会社日立製作所 波長可変半導体装置
JP2567437B2 (ja) * 1988-01-08 1996-12-25 住友電気工業株式会社 半導体レーザ装置及びその評価方法ならびにその製造方法
GB2234632A (en) * 1989-08-01 1991-02-06 British Telecomm Distributed feedback laser
US5012484A (en) * 1990-01-02 1991-04-30 At&T Bell Laboratories Analog optical fiber communication system, and laser adapted for use in such a system

Also Published As

Publication number Publication date
JP2804838B2 (ja) 1998-09-30
JPH04147686A (ja) 1992-05-21
US5187717A (en) 1993-02-16
EP0480697A3 (en) 1992-05-20
EP0480697A2 (de) 1992-04-15
DE69102240T2 (de) 1995-01-12
EP0480697B1 (de) 1994-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee