JPS6414988A - Wavelength-tunable semiconductor laser - Google Patents

Wavelength-tunable semiconductor laser

Info

Publication number
JPS6414988A
JPS6414988A JP62171528A JP17152887A JPS6414988A JP S6414988 A JPS6414988 A JP S6414988A JP 62171528 A JP62171528 A JP 62171528A JP 17152887 A JP17152887 A JP 17152887A JP S6414988 A JPS6414988 A JP S6414988A
Authority
JP
Japan
Prior art keywords
flow
wavelength
caused
region
divided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62171528A
Other languages
Japanese (ja)
Inventor
Ikuo Mito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62171528A priority Critical patent/JPS6414988A/en
Publication of JPS6414988A publication Critical patent/JPS6414988A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Optical Communication System (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make it possible to change continuously an oscillation wavelength within a range of 30Angstrom or longer and to reduce greatly the increase in an oscillation spectral line width by a method wherein each region is provided with electrodes, which respectively are capable of causing a current to flow independently, and at the same time, a luminous region and a phase control region are each divided into a plurality of regions and the divided regions are arranged alternately. CONSTITUTION:A luminous region and a phase control region are respectively divided into 3 pieces of 101, 102 and 103 and 3 pieces of 201, 202 and 203, which are all short in length, and the divided regions are arranged alternately. A large change does not appear in the field distribution in the interior of a resonator in case Ip' and Id are not caused to flow and in case the Ip' and the Id are caused to flow. Even in the carrier density distributions in the interiors of active layers 4, the flatness is maintained and even in case the Ip' and the Id are caused to flow for changing the wavelength, the increase in an oscillation spectral line width can be inhibited small.
JP62171528A 1987-07-08 1987-07-08 Wavelength-tunable semiconductor laser Pending JPS6414988A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62171528A JPS6414988A (en) 1987-07-08 1987-07-08 Wavelength-tunable semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62171528A JPS6414988A (en) 1987-07-08 1987-07-08 Wavelength-tunable semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6414988A true JPS6414988A (en) 1989-01-19

Family

ID=15924795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62171528A Pending JPS6414988A (en) 1987-07-08 1987-07-08 Wavelength-tunable semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6414988A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0402907A2 (en) * 1989-06-14 1990-12-19 Hitachi, Ltd. Semiconductor laser device
JPH04147686A (en) * 1990-10-11 1992-05-21 Kokusai Denshin Denwa Co Ltd <Kdd> Variable wavelength semiconductor laser
JP2003536264A (en) * 2000-06-02 2003-12-02 アジリティー コミュニケイションズ インコーポレイテッド High power, manufacturable extraction grating distributed Bragg reflector laser

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0402907A2 (en) * 1989-06-14 1990-12-19 Hitachi, Ltd. Semiconductor laser device
US5119393A (en) * 1989-06-14 1992-06-02 Hitachi, Ltd. Semiconductor laser device capable of controlling wavelength shift
JPH04147686A (en) * 1990-10-11 1992-05-21 Kokusai Denshin Denwa Co Ltd <Kdd> Variable wavelength semiconductor laser
JP2003536264A (en) * 2000-06-02 2003-12-02 アジリティー コミュニケイションズ インコーポレイテッド High power, manufacturable extraction grating distributed Bragg reflector laser

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