JPS6454790A - Distributed feedback type semiconductor laser - Google Patents

Distributed feedback type semiconductor laser

Info

Publication number
JPS6454790A
JPS6454790A JP62212097A JP21209787A JPS6454790A JP S6454790 A JPS6454790 A JP S6454790A JP 62212097 A JP62212097 A JP 62212097A JP 21209787 A JP21209787 A JP 21209787A JP S6454790 A JPS6454790 A JP S6454790A
Authority
JP
Japan
Prior art keywords
grating
type semiconductor
distributed feedback
feedback type
diffraction grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62212097A
Other languages
Japanese (ja)
Inventor
Tomoaki Uno
Jiyun Otani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62212097A priority Critical patent/JPS6454790A/en
Publication of JPS6454790A publication Critical patent/JPS6454790A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1246—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts plurality of phase shifts

Abstract

PURPOSE:To control the length of a diffraction grating region, to obtain a predetermined coupling factor with good controllability and to stabilize the oscillation of single mode by dividing the interior of a laser resonator by a triangular grating to provide the grating region. CONSTITUTION:Diffraction grating regions 10 divided into a plurality in a direction for forming a laser resonator are provided on a photoconductive layer 12 adjacent to an active layer 13. A diffraction grating is formed of a triangular shape formed of a general surface (111) formed on compound semiconductor of a surface orientation (100). When the value of the coupling factor of the grating is set in a range of 1 to 2, a distributed feedback type semiconductor element which is oscillated in a single longitudinal mode is obtained.
JP62212097A 1987-08-26 1987-08-26 Distributed feedback type semiconductor laser Pending JPS6454790A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62212097A JPS6454790A (en) 1987-08-26 1987-08-26 Distributed feedback type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62212097A JPS6454790A (en) 1987-08-26 1987-08-26 Distributed feedback type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6454790A true JPS6454790A (en) 1989-03-02

Family

ID=16616828

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62212097A Pending JPS6454790A (en) 1987-08-26 1987-08-26 Distributed feedback type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6454790A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06125138A (en) * 1992-10-10 1994-05-06 Anritsu Corp Laser
EP0647867A1 (en) * 1993-10-09 1995-04-12 Robert Bosch Gmbh Optoelectronic element with DFB grating having a variable coupling coefficient
WO1997014201A1 (en) * 1995-10-06 1997-04-17 British Telecommunications Public Limited Company Optical filters
US6198863B1 (en) 1995-10-06 2001-03-06 British Telecommunications Public Limited Company Optical filters
JP2007294774A (en) * 2006-04-27 2007-11-08 Opnext Japan Inc Semiconductor laser device and its manufacturing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06125138A (en) * 1992-10-10 1994-05-06 Anritsu Corp Laser
EP0647867A1 (en) * 1993-10-09 1995-04-12 Robert Bosch Gmbh Optoelectronic element with DFB grating having a variable coupling coefficient
WO1997014201A1 (en) * 1995-10-06 1997-04-17 British Telecommunications Public Limited Company Optical filters
US6198863B1 (en) 1995-10-06 2001-03-06 British Telecommunications Public Limited Company Optical filters
JP2007294774A (en) * 2006-04-27 2007-11-08 Opnext Japan Inc Semiconductor laser device and its manufacturing method

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