JPS56112785A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS56112785A
JPS56112785A JP1452880A JP1452880A JPS56112785A JP S56112785 A JPS56112785 A JP S56112785A JP 1452880 A JP1452880 A JP 1452880A JP 1452880 A JP1452880 A JP 1452880A JP S56112785 A JPS56112785 A JP S56112785A
Authority
JP
Japan
Prior art keywords
layer
face
length
active
clad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1452880A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1452880A priority Critical patent/JPS56112785A/en
Publication of JPS56112785A publication Critical patent/JPS56112785A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain the end face buried type semiconductor laser having low oscillation threshold current and single oscillation wavelength by forming a composite resonator of a striped light waveguide layer and active layers and burying the end face of the active layer in a layer having large forbidden band width. CONSTITUTION:A clad layer 12 and a light waveguide layer 13 are formed in stripe shape on a semiconductor substrate 11. The active layer 14 having a length L2 is formed in stripe shape adjacent to the layer 13 by isolating at the length L1 from one end face of the layer 13 and at the length L3 from the other end face thereof with the relationship of L1=nL3=L3/m=(L1+L2+L3)/l, where l, m, n are integers, or L1+L2+L3>=2L2 consistent. Further, a clad layer 15 having equal length to the layer 14 is formed adjacent to the layer 14, and a clad layer 16 having wider forbidden band width than the active layer is so formed as to bury the layers 12, 13, 14, 15.
JP1452880A 1980-02-08 1980-02-08 Semiconductor laser Pending JPS56112785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1452880A JPS56112785A (en) 1980-02-08 1980-02-08 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1452880A JPS56112785A (en) 1980-02-08 1980-02-08 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56112785A true JPS56112785A (en) 1981-09-05

Family

ID=11863628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1452880A Pending JPS56112785A (en) 1980-02-08 1980-02-08 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56112785A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138085A (en) * 1982-02-10 1983-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS58138084A (en) * 1982-02-10 1983-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS59220985A (en) * 1983-05-31 1984-12-12 Toshiba Corp Semiconductor laser device
US5065403A (en) * 1989-06-13 1991-11-12 Nec Corporation Self-alignment type window semiconductor laser
JP2006278938A (en) * 2005-03-30 2006-10-12 Anritsu Corp Semiconductor light-emitting element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104843A (en) * 1975-03-11 1976-09-17 Western Electric Co
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51104843A (en) * 1975-03-11 1976-09-17 Western Electric Co
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58138085A (en) * 1982-02-10 1983-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS58138084A (en) * 1982-02-10 1983-08-16 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device
JPS59220985A (en) * 1983-05-31 1984-12-12 Toshiba Corp Semiconductor laser device
US5065403A (en) * 1989-06-13 1991-11-12 Nec Corporation Self-alignment type window semiconductor laser
JP2006278938A (en) * 2005-03-30 2006-10-12 Anritsu Corp Semiconductor light-emitting element
JP4541208B2 (en) * 2005-03-30 2010-09-08 アンリツ株式会社 Semiconductor light emitting device

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