JPS56112784A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS56112784A
JPS56112784A JP1452780A JP1452780A JPS56112784A JP S56112784 A JPS56112784 A JP S56112784A JP 1452780 A JP1452780 A JP 1452780A JP 1452780 A JP1452780 A JP 1452780A JP S56112784 A JPS56112784 A JP S56112784A
Authority
JP
Japan
Prior art keywords
layer
striped
layers
clad
active layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1452780A
Other languages
Japanese (ja)
Inventor
Takao Furuse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1452780A priority Critical patent/JPS56112784A/en
Publication of JPS56112784A publication Critical patent/JPS56112784A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Abstract

PURPOSE:To suppress the slow vibration of an end face buried type semiconductor laser by forming a striped light waveguide layer branched at the tip into a plurality and active layers formed on the respective branches and the trunk of the layer. CONSTITUTION:A clad layer 12 and a light waveguide layer 13 are formed in striped state by branching at least one end on a semiconductor substrate 11. Striped active layers 14 are formed adjacent to the branches and the shank of the layer 13 and apart therefrom, and striped clad layers 15 are formed adjacent to the respective active layers 14. A clad layer 16 having wider forbidden band width than the layer 14 is so formed as to surround the layers 12, 13, 14, 15. Thus, the end face of the active layer is buried in the clad layer 15. Accordingly, the light absorption loss is removed to suppress the slow vibration.
JP1452780A 1980-02-08 1980-02-08 Semiconductor laser Pending JPS56112784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1452780A JPS56112784A (en) 1980-02-08 1980-02-08 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1452780A JPS56112784A (en) 1980-02-08 1980-02-08 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56112784A true JPS56112784A (en) 1981-09-05

Family

ID=11863595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1452780A Pending JPS56112784A (en) 1980-02-08 1980-02-08 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56112784A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942277A (en) * 1972-03-03 1974-04-20
JPS51104843A (en) * 1975-03-11 1976-09-17 Western Electric Co
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942277A (en) * 1972-03-03 1974-04-20
JPS51104843A (en) * 1975-03-11 1976-09-17 Western Electric Co
JPS51142283A (en) * 1975-06-02 1976-12-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode

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