JPS5730395A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5730395A
JPS5730395A JP10416580A JP10416580A JPS5730395A JP S5730395 A JPS5730395 A JP S5730395A JP 10416580 A JP10416580 A JP 10416580A JP 10416580 A JP10416580 A JP 10416580A JP S5730395 A JPS5730395 A JP S5730395A
Authority
JP
Japan
Prior art keywords
layer
light emitting
emitting device
semiconductor light
clad layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10416580A
Other languages
Japanese (ja)
Inventor
Tsugio Kumai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10416580A priority Critical patent/JPS5730395A/en
Publication of JPS5730395A publication Critical patent/JPS5730395A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve the yield of a semiconductor light emitting device by epitaxially growing sequentially the second and layer, active layer, first clad layer and cap layer on the surface of a semiconductor substrate and then removing in two groove shape the cap layer and the first clad layer. CONSTITUTION:The second clad layer 4, active layer 3, first clad layer 2 and cap layer 1 are sequentially epitaxially grown on the surface of a semiconductor substrate 5. Then, the layers 1, 2 are removed in two groove shape. In this manner, a pair of guide layers and stripe structure are formed, thereby improving the yield.
JP10416580A 1980-07-29 1980-07-29 Semiconductor light emitting device Pending JPS5730395A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10416580A JPS5730395A (en) 1980-07-29 1980-07-29 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10416580A JPS5730395A (en) 1980-07-29 1980-07-29 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5730395A true JPS5730395A (en) 1982-02-18

Family

ID=14373430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10416580A Pending JPS5730395A (en) 1980-07-29 1980-07-29 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5730395A (en)

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