JPS5730387A - Manufacture of semiconductor light emitting device - Google Patents

Manufacture of semiconductor light emitting device

Info

Publication number
JPS5730387A
JPS5730387A JP10416680A JP10416680A JPS5730387A JP S5730387 A JPS5730387 A JP S5730387A JP 10416680 A JP10416680 A JP 10416680A JP 10416680 A JP10416680 A JP 10416680A JP S5730387 A JPS5730387 A JP S5730387A
Authority
JP
Japan
Prior art keywords
layer
buried
groove
layers
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10416680A
Other languages
Japanese (ja)
Inventor
Hajime Imai
Hiroshi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10416680A priority Critical patent/JPS5730387A/en
Publication of JPS5730387A publication Critical patent/JPS5730387A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Abstract

PURPOSE:To prevent the deterioration of crystallinity by epitaxially growing sequentially the second and first buried layers on a clad layer, forming a groove passing through the layers, burying the groove and growing a semiconductor layer covering the first buried layer. CONSTITUTION:The second and first buried layers are sequentially epitaxially grown on a clad layer 4, and a groove passing through the layers is formed. Then, the groove is buried, and the semiconductor layer 4 covering the first buried layer is groven. The second buried layer 5 has smaller energy gap than the clad layer, while the first buried layer 6 has larger energy gap than the second buried layer different from the conductive type of the clad layer. The second buried layer is contacted with grown melt and is thus removed in the groove region formed by removing the part of the first layer partly by ethching. In this manner, the shape of the striped part can be constantly configured, and the deterioration in the crystallinity can be prevented.
JP10416680A 1980-07-29 1980-07-29 Manufacture of semiconductor light emitting device Pending JPS5730387A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10416680A JPS5730387A (en) 1980-07-29 1980-07-29 Manufacture of semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10416680A JPS5730387A (en) 1980-07-29 1980-07-29 Manufacture of semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5730387A true JPS5730387A (en) 1982-02-18

Family

ID=14373456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10416680A Pending JPS5730387A (en) 1980-07-29 1980-07-29 Manufacture of semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5730387A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62155579A (en) * 1985-07-31 1987-07-10 Oki Electric Ind Co Ltd Semiconductor laser element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62155579A (en) * 1985-07-31 1987-07-10 Oki Electric Ind Co Ltd Semiconductor laser element

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