JPS5756979A - Semiconductor light enitting device - Google Patents

Semiconductor light enitting device

Info

Publication number
JPS5756979A
JPS5756979A JP13248280A JP13248280A JPS5756979A JP S5756979 A JPS5756979 A JP S5756979A JP 13248280 A JP13248280 A JP 13248280A JP 13248280 A JP13248280 A JP 13248280A JP S5756979 A JPS5756979 A JP S5756979A
Authority
JP
Japan
Prior art keywords
light emitting
electrode
layer
critical angle
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13248280A
Other languages
Japanese (ja)
Other versions
JPS6244719B2 (en
Inventor
Shuichi Osaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13248280A priority Critical patent/JPS5756979A/en
Publication of JPS5756979A publication Critical patent/JPS5756979A/en
Publication of JPS6244719B2 publication Critical patent/JPS6244719B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To enhance the light emitting intensity of a semiconductor light emitting device and to reduce the width of half intensity distribution in the device having electrodes on both side surfaces of a light emitting element by forming the electrode at the light emitting surface side of the element within the range expressed from the cleavage surface of the element (the thickness of the layer at the light emitting surface side/the tangent of the crystalline critical angle). CONSTITUTION:An N type layer 22 and a P type layer 23 to become layers of light emitting surface sides are grown by a liquid phase epitaxial growth method on the substrate 21 of a light emitting element 2 in accordance with the solid solubility of the impurity therein. Then, one electrode 24 is formed on the layer 23, and the other electrode 25 is formed on the back surface of the substrate 21, a current is flowed therebetween, and the light thus produced is picked up from the cleavage surface 16. At this time the light emitted from the region 27 shown by shaded part is within the critical angle determined by thetac=Sin(1/n), where n represents refractive index, the light emitted in the vicinity of the P-N junction of the region 27 is not fully reflected on the cleavage surface 26, but is emitted out of the crystal. Accordingly, the position of the electrode 24 is formed within l/tanthetac from the end of the cleavage surface 26 where l represents the thickness of the layer 23, and thetac represents the crystalline critical angle.
JP13248280A 1980-09-23 1980-09-23 Semiconductor light enitting device Granted JPS5756979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13248280A JPS5756979A (en) 1980-09-23 1980-09-23 Semiconductor light enitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13248280A JPS5756979A (en) 1980-09-23 1980-09-23 Semiconductor light enitting device

Publications (2)

Publication Number Publication Date
JPS5756979A true JPS5756979A (en) 1982-04-05
JPS6244719B2 JPS6244719B2 (en) 1987-09-22

Family

ID=15082399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13248280A Granted JPS5756979A (en) 1980-09-23 1980-09-23 Semiconductor light enitting device

Country Status (1)

Country Link
JP (1) JPS5756979A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49111592A (en) * 1973-02-21 1974-10-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49111592A (en) * 1973-02-21 1974-10-24

Also Published As

Publication number Publication date
JPS6244719B2 (en) 1987-09-22

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