JPS5319778A - Singlemode semiconductor laser and its production - Google Patents

Singlemode semiconductor laser and its production

Info

Publication number
JPS5319778A
JPS5319778A JP9433676A JP9433676A JPS5319778A JP S5319778 A JPS5319778 A JP S5319778A JP 9433676 A JP9433676 A JP 9433676A JP 9433676 A JP9433676 A JP 9433676A JP S5319778 A JPS5319778 A JP S5319778A
Authority
JP
Japan
Prior art keywords
singlemode
semiconductor laser
production
producing
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9433676A
Other languages
Japanese (ja)
Inventor
Katsuhiko Nishida
Shinsuke Ueno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9433676A priority Critical patent/JPS5319778A/en
Publication of JPS5319778A publication Critical patent/JPS5319778A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3068—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure deep levels

Abstract

PURPOSE:To obtain a semiconductor laser which stably oscillates in singlemode by forming trapping centers within stripe form active layers through ion implantation at the time of producing the singlemode semiconductor laser.
JP9433676A 1976-08-06 1976-08-06 Singlemode semiconductor laser and its production Pending JPS5319778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9433676A JPS5319778A (en) 1976-08-06 1976-08-06 Singlemode semiconductor laser and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9433676A JPS5319778A (en) 1976-08-06 1976-08-06 Singlemode semiconductor laser and its production

Publications (1)

Publication Number Publication Date
JPS5319778A true JPS5319778A (en) 1978-02-23

Family

ID=14107429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9433676A Pending JPS5319778A (en) 1976-08-06 1976-08-06 Singlemode semiconductor laser and its production

Country Status (1)

Country Link
JP (1) JPS5319778A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4523961A (en) * 1982-11-12 1985-06-18 At&T Bell Laboratories Method of improving current confinement in semiconductor lasers by inert ion bombardment
US4539743A (en) * 1983-11-28 1985-09-10 At&T Bell Laboratories Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
US4610731A (en) * 1985-04-03 1986-09-09 At&T Bell Laboratories Shallow impurity neutralization
JPS62110448A (en) * 1985-11-07 1987-05-21 株式会社東芝 Synchronized speed controller
US5126277A (en) * 1988-06-07 1992-06-30 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor device having a resistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4511408A (en) * 1982-04-22 1985-04-16 The Board Of Trustees Of The University Of Illinois Semiconductor device fabrication with disordering elements introduced into active region
US4523961A (en) * 1982-11-12 1985-06-18 At&T Bell Laboratories Method of improving current confinement in semiconductor lasers by inert ion bombardment
US4539743A (en) * 1983-11-28 1985-09-10 At&T Bell Laboratories Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
US4610731A (en) * 1985-04-03 1986-09-09 At&T Bell Laboratories Shallow impurity neutralization
JPS62110448A (en) * 1985-11-07 1987-05-21 株式会社東芝 Synchronized speed controller
JPH082157B2 (en) * 1985-11-07 1996-01-10 株式会社東芝 Synchronous speed controller
US5126277A (en) * 1988-06-07 1992-06-30 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor device having a resistor

Similar Documents

Publication Publication Date Title
JPS5319778A (en) Singlemode semiconductor laser and its production
JPS5362489A (en) Production of semiconductor laser
JPS5367391A (en) Semiconductor laser device
JPS5420684A (en) Light emitting semiconductor device
JPS52144989A (en) Semiconductor light emitting device
JPS5310292A (en) Production of semiconductor laser device
JPS5245888A (en) Semiconductor laser device
JPS52130584A (en) Distribution feedback type laser
JPS5368499A (en) Method of shaping laser beam used for machining
JPS57207387A (en) Semiconductor optical function element
JPS52149487A (en) Crystal vibrator and its production
JPS5320757A (en) Ultra-high frequency solid oscillator
JPS5291672A (en) Longer side piezoelectric vibrator
JPS5215279A (en) Semiconductor laser oscillator with mode selector
JPS5216956A (en) Self-bias type amplifier
JPS5299773A (en) Forming method for small size regions
JPS53135292A (en) Structure and production of variable stripe width semiconductor laser element
JPS5414183A (en) Semiconductor laser element and its manufacture
JPS5211895A (en) Forming equipment for dooble parallel beams
JPS5358786A (en) Injection type laser device
JPS5358788A (en) Injection type laser device
JPS5425686A (en) Semiconductor junction laser
JPS5360588A (en) Semiconductor laser device
JPS531007A (en) Manufacture of magnetic head
JPS5329662A (en) Production of semiconductor device