JPS5329662A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5329662A
JPS5329662A JP10442076A JP10442076A JPS5329662A JP S5329662 A JPS5329662 A JP S5329662A JP 10442076 A JP10442076 A JP 10442076A JP 10442076 A JP10442076 A JP 10442076A JP S5329662 A JPS5329662 A JP S5329662A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
region
importing
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10442076A
Other languages
Japanese (ja)
Inventor
Yutaka Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10442076A priority Critical patent/JPS5329662A/en
Publication of JPS5329662A publication Critical patent/JPS5329662A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To make a specific part of a semiconductor substrate the low lifetime region, by injecting gas ions and forming a lattice defect region having the concentration peak at the projection range in the active layer and importing a heavy metal.
COPYRIGHT: (C)1978,JPO&Japio
JP10442076A 1976-08-31 1976-08-31 Production of semiconductor device Pending JPS5329662A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10442076A JPS5329662A (en) 1976-08-31 1976-08-31 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10442076A JPS5329662A (en) 1976-08-31 1976-08-31 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5329662A true JPS5329662A (en) 1978-03-20

Family

ID=14380190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10442076A Pending JPS5329662A (en) 1976-08-31 1976-08-31 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5329662A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135941A (en) * 1980-03-28 1981-10-23 Nec Corp Semiconductor ic device
JPH04252078A (en) * 1991-01-28 1992-09-08 Toshiba Corp Manufacture of switching semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942420A (en) * 1972-08-26 1974-04-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942420A (en) * 1972-08-26 1974-04-22

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56135941A (en) * 1980-03-28 1981-10-23 Nec Corp Semiconductor ic device
JPH04252078A (en) * 1991-01-28 1992-09-08 Toshiba Corp Manufacture of switching semiconductor device

Similar Documents

Publication Publication Date Title
JPS52106279A (en) Manufacture of semiconductor ic
JPS5380966A (en) Manufacture of electrode fdr semiconductor device
JPS5329662A (en) Production of semiconductor device
JPS5253673A (en) Device and production for semiconductor
JPS5331964A (en) Production of semiconductor substrates
JPS52109369A (en) Manufacture of semiconductor device
JPS5214374A (en) Treatment equpment for ion beam
JPS531471A (en) Manufacture for semiconductor device
JPS5228879A (en) Semiconductor device and method for its production
JPS5368165A (en) Production of semiconductor device
JPS53123673A (en) Manufacture of semiconductor device
JPS5348458A (en) Production of semiconductor device
JPS52153383A (en) Preparation of semiconductor device
JPS534476A (en) Mask alignment method to semiconductor substrate
JPS5389365A (en) Production of semiconductor device
JPS5361980A (en) Production of semiconductor device
JPS51140559A (en) Impurities diffusing to iii-v group compound semi-conductor base plate
JPS5374383A (en) Manufacture of compound semiconductor device
JPS5267983A (en) Semiconductor unit
JPS52123872A (en) Semiconductor device and its production
JPS5377168A (en) Production of semiconductor device
JPS5442987A (en) Manufacture of semiconductor device
JPS5251872A (en) Production of semiconductor device
JPS5293270A (en) Manufacture for semiconductor device
JPS5231690A (en) Productin method of semiconductor device