JPS577183A - Fundamental transverse mode semiconductor laser and manufacture therefor - Google Patents

Fundamental transverse mode semiconductor laser and manufacture therefor

Info

Publication number
JPS577183A
JPS577183A JP8118780A JP8118780A JPS577183A JP S577183 A JPS577183 A JP S577183A JP 8118780 A JP8118780 A JP 8118780A JP 8118780 A JP8118780 A JP 8118780A JP S577183 A JPS577183 A JP S577183A
Authority
JP
Japan
Prior art keywords
layer
type
transverse mode
mesa
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8118780A
Other languages
Japanese (ja)
Inventor
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8118780A priority Critical patent/JPS577183A/en
Publication of JPS577183A publication Critical patent/JPS577183A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a high-efficiency and stable fundamental transverse mode oscillating laser by providing a absorbing layer for controling a transverse mode having forbidden band width narrower than an active layer at both sides of a belt-shaped mesa structure wherein a clad layer and an active layer are formed by one time of epitaxial growth. CONSTITUTION:A belt-shaped mesa 10 is provided on an N type InP1(001) surface and liquid phase expitaxial growth is performed by narrowing mesa width and properly controlling the shape and a P type InGaAsP transverse mode control layer 2 is provided on a mesa side only and an N type InP3, a nonadditive P type InGaAsP active layer 4, a P type InP5, and an N type InGaAsP 6 are formed by a growth process. Next, a Zn diffusion layer 22 reaching the layer 5 is formed. An Au-Zu electrode 20 and an Au-Sn electrode 21 are provided on the layer 6 and a substrate respectively to form the end surface of a resonator by cleavage. The light exuded from the active layer 4 through the control layer 2 having narrow forbidden band width and located at both sides of the mesa causes a heavy loss and oscillating transverse mode is controlled by fundamental single mode. Because the layer 2 is P type in contrast with the substrate, high-efficiency oscillation can be obtained at low threshold value.
JP8118780A 1980-06-16 1980-06-16 Fundamental transverse mode semiconductor laser and manufacture therefor Pending JPS577183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8118780A JPS577183A (en) 1980-06-16 1980-06-16 Fundamental transverse mode semiconductor laser and manufacture therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8118780A JPS577183A (en) 1980-06-16 1980-06-16 Fundamental transverse mode semiconductor laser and manufacture therefor

Publications (1)

Publication Number Publication Date
JPS577183A true JPS577183A (en) 1982-01-14

Family

ID=13739457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8118780A Pending JPS577183A (en) 1980-06-16 1980-06-16 Fundamental transverse mode semiconductor laser and manufacture therefor

Country Status (1)

Country Link
JP (1) JPS577183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178912A2 (en) * 1984-10-16 1986-04-23 Sharp Kabushiki Kaisha A semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0178912A2 (en) * 1984-10-16 1986-04-23 Sharp Kabushiki Kaisha A semiconductor laser

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