JPS577183A - Fundamental transverse mode semiconductor laser and manufacture therefor - Google Patents
Fundamental transverse mode semiconductor laser and manufacture thereforInfo
- Publication number
- JPS577183A JPS577183A JP8118780A JP8118780A JPS577183A JP S577183 A JPS577183 A JP S577183A JP 8118780 A JP8118780 A JP 8118780A JP 8118780 A JP8118780 A JP 8118780A JP S577183 A JPS577183 A JP S577183A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- transverse mode
- mesa
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain a high-efficiency and stable fundamental transverse mode oscillating laser by providing a absorbing layer for controling a transverse mode having forbidden band width narrower than an active layer at both sides of a belt-shaped mesa structure wherein a clad layer and an active layer are formed by one time of epitaxial growth. CONSTITUTION:A belt-shaped mesa 10 is provided on an N type InP1(001) surface and liquid phase expitaxial growth is performed by narrowing mesa width and properly controlling the shape and a P type InGaAsP transverse mode control layer 2 is provided on a mesa side only and an N type InP3, a nonadditive P type InGaAsP active layer 4, a P type InP5, and an N type InGaAsP 6 are formed by a growth process. Next, a Zn diffusion layer 22 reaching the layer 5 is formed. An Au-Zu electrode 20 and an Au-Sn electrode 21 are provided on the layer 6 and a substrate respectively to form the end surface of a resonator by cleavage. The light exuded from the active layer 4 through the control layer 2 having narrow forbidden band width and located at both sides of the mesa causes a heavy loss and oscillating transverse mode is controlled by fundamental single mode. Because the layer 2 is P type in contrast with the substrate, high-efficiency oscillation can be obtained at low threshold value.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8118780A JPS577183A (en) | 1980-06-16 | 1980-06-16 | Fundamental transverse mode semiconductor laser and manufacture therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8118780A JPS577183A (en) | 1980-06-16 | 1980-06-16 | Fundamental transverse mode semiconductor laser and manufacture therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS577183A true JPS577183A (en) | 1982-01-14 |
Family
ID=13739457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8118780A Pending JPS577183A (en) | 1980-06-16 | 1980-06-16 | Fundamental transverse mode semiconductor laser and manufacture therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS577183A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0178912A2 (en) * | 1984-10-16 | 1986-04-23 | Sharp Kabushiki Kaisha | A semiconductor laser |
-
1980
- 1980-06-16 JP JP8118780A patent/JPS577183A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0178912A2 (en) * | 1984-10-16 | 1986-04-23 | Sharp Kabushiki Kaisha | A semiconductor laser |
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