FR2713350B1 - Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant. - Google Patents

Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.

Info

Publication number
FR2713350B1
FR2713350B1 FR9314588A FR9314588A FR2713350B1 FR 2713350 B1 FR2713350 B1 FR 2713350B1 FR 9314588 A FR9314588 A FR 9314588A FR 9314588 A FR9314588 A FR 9314588A FR 2713350 B1 FR2713350 B1 FR 2713350B1
Authority
FR
France
Prior art keywords
component
manufacturing
bragg gratings
optical component
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9314588A
Other languages
English (en)
Other versions
FR2713350A1 (fr
Inventor
Franck Delorme
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR9314588A priority Critical patent/FR2713350B1/fr
Priority to DE4442640A priority patent/DE4442640A1/de
Priority to US08/349,567 priority patent/US5553091A/en
Publication of FR2713350A1 publication Critical patent/FR2713350A1/fr
Application granted granted Critical
Publication of FR2713350B1 publication Critical patent/FR2713350B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
    • G02B5/1819—Plural gratings positioned on the same surface, e.g. array of gratings
    • G02B5/1823—Plural gratings positioned on the same surface, e.g. array of gratings in an overlapping or superposed manner
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
FR9314588A 1993-12-06 1993-12-06 Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant. Expired - Fee Related FR2713350B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9314588A FR2713350B1 (fr) 1993-12-06 1993-12-06 Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.
DE4442640A DE4442640A1 (de) 1993-12-06 1994-11-30 Optisches Bauelement mit einer Mehrzahl von Braggschen Gittern und Verfahren zur Herstellung dieses Bauelements
US08/349,567 US5553091A (en) 1993-12-06 1994-12-05 Optical component having a plurality of bragg gratings and process for the production of said components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9314588A FR2713350B1 (fr) 1993-12-06 1993-12-06 Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.

Publications (2)

Publication Number Publication Date
FR2713350A1 FR2713350A1 (fr) 1995-06-09
FR2713350B1 true FR2713350B1 (fr) 1995-12-29

Family

ID=9453591

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9314588A Expired - Fee Related FR2713350B1 (fr) 1993-12-06 1993-12-06 Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.

Country Status (3)

Country Link
US (1) US5553091A (fr)
DE (1) DE4442640A1 (fr)
FR (1) FR2713350B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2734676B1 (fr) * 1995-05-23 1997-08-08 Labeyrie Antoine Procede et dispositifs d'emission ou reception laser pour la transmission d'informations par voie optique
FR2737942B1 (fr) * 1995-08-18 1997-11-07 Delorme Franck Composant d'emission laser accordable en longueur d'onde par variation d'absorption
FR2762447B1 (fr) * 1997-04-21 2000-06-30 France Telecom Procede de fabrication d'un dispositif semiconducteur a reseau de bragg de pas constant
US5852687A (en) * 1997-07-09 1998-12-22 Trw Inc. Integrated optical time delay unit
US6139147A (en) * 1998-11-20 2000-10-31 Novartis Ag Actively controllable multifocal lens
US5997140A (en) * 1997-12-29 1999-12-07 Novartis Ag Actively controllable multifocal lens
US6139146A (en) * 1997-12-29 2000-10-31 Novartis Ag Programmable corrective lenses
TW393813B (en) * 1998-12-03 2000-06-11 Nat Science Council Adjustable monolithic multi-wavelength laser arrays
EP1172907B1 (fr) 2000-07-11 2006-05-31 Corning Incorporated Amplificateur optique à gain stabilisé et adjustable
US20020093701A1 (en) * 2000-12-29 2002-07-18 Xiaoxiao Zhang Holographic multifocal lens
US6574260B2 (en) 2001-03-15 2003-06-03 Corning Lasertron Incorporated Electroabsorption modulated laser
JP4408185B2 (ja) * 2001-06-22 2010-02-03 富士フイルム株式会社 半導体レーザ装置
US6903379B2 (en) * 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
US8040933B2 (en) * 2008-03-10 2011-10-18 Sumitomo Electric Industries, Ltd. Diffraction grating device, laser diode, and wavelength tunable filter

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3814498A (en) * 1972-05-04 1974-06-04 Bell Telephone Labor Inc Integrated optical circuit devices employing optical gratings
US4445218A (en) * 1981-09-28 1984-04-24 Bell Telephone Laboratories, Incorporated Semiconductor laser with conductive current mask
JPS58196088A (ja) * 1982-05-12 1983-11-15 Hitachi Ltd 半導体レ−ザ素子
JPS5931088A (ja) * 1982-08-14 1984-02-18 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS60247986A (ja) * 1984-05-23 1985-12-07 Fujitsu Ltd 分布帰還型半導体レ−ザ
JPS6114787A (ja) * 1984-06-29 1986-01-22 Nec Corp 分布帰還型半導体レ−ザ
JPS61191093A (ja) * 1985-02-20 1986-08-25 Matsushita Electric Ind Co Ltd 半導体装置
JPS6373585A (ja) * 1986-09-16 1988-04-04 Nec Corp 周波数可変分布ブラツグ反射型半導体レ−ザ
FR2605801B1 (fr) * 1986-10-23 1989-03-03 Menigaux Louis Procede de fabrication d'une structure semi-conductrice susceptible d'effet laser multi-longueurs d'onde, et dispositif obtenu
JP2825508B2 (ja) * 1987-10-09 1998-11-18 株式会社日立製作所 半導体レーザ装置および光通信システム
JPH01124279A (ja) * 1987-11-09 1989-05-17 Matsushita Electric Ind Co Ltd 分布帰還型レーザ
GB8907304D0 (en) * 1989-03-31 1989-05-17 British Telecomm Distributed feedback lasers
US4932032A (en) * 1989-08-03 1990-06-05 At&T Bell Laboratories Tapered semiconductor waveguides
US5109386A (en) * 1990-09-10 1992-04-28 Tacan Corporation Rugate filter on grating coupled surface emitting laser array
IT1245541B (it) * 1991-05-13 1994-09-29 Cselt Centro Studi Lab Telecom Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione
JP2982422B2 (ja) * 1991-09-20 1999-11-22 三菱電機株式会社 半導体レーザおよびその製造方法
JP2705409B2 (ja) * 1991-11-21 1998-01-28 三菱電機株式会社 半導体分布帰還形レーザ装置
US5208824A (en) * 1991-12-12 1993-05-04 At&T Bell Laboratories Article comprising a DFB semiconductor laser
US5384797A (en) * 1992-09-21 1995-01-24 Sdl, Inc. Monolithic multi-wavelength laser diode array

Also Published As

Publication number Publication date
US5553091A (en) 1996-09-03
FR2713350A1 (fr) 1995-06-09
DE4442640A1 (de) 1995-06-08

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