IT1245541B - Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione - Google Patents

Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione

Info

Publication number
IT1245541B
IT1245541B ITTO910352A ITTO910352A IT1245541B IT 1245541 B IT1245541 B IT 1245541B IT TO910352 A ITTO910352 A IT TO910352A IT TO910352 A ITTO910352 A IT TO910352A IT 1245541 B IT1245541 B IT 1245541B
Authority
IT
Italy
Prior art keywords
procedure
semiconductor laser
gain
manufacture
pair
Prior art date
Application number
ITTO910352A
Other languages
English (en)
Inventor
Marina Meliga
Original Assignee
Cselt Centro Studi Lab Telecom
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cselt Centro Studi Lab Telecom filed Critical Cselt Centro Studi Lab Telecom
Priority to ITTO910352A priority Critical patent/IT1245541B/it
Publication of ITTO910352A0 publication Critical patent/ITTO910352A0/it
Priority to JP4143732A priority patent/JPH07118567B2/ja
Priority to EP92108011A priority patent/EP0513745B1/en
Priority to DE69203784T priority patent/DE69203784T2/de
Priority to CA002068443A priority patent/CA2068443C/en
Priority to DE199292108011T priority patent/DE513745T1/de
Priority to US07/882,294 priority patent/US5276702A/en
Publication of ITTO910352A1 publication Critical patent/ITTO910352A1/it
Application granted granted Critical
Publication of IT1245541B publication Critical patent/IT1245541B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

IN UN LASER A SEMICONDUTTORE A REAZIONE DISTRIBUITA, IL MEZZO ATTIVO PRESENTA UNA VARIAZIONE PERIODICA DI SPESSORE NEL SENSO DI PROPAGAZIONE DELLA LUCE, TALE DA GENERARE UNA VARIAZIONE PERIODICA DEL GUADAGNO MANTENENDO COSTANTE L'INDICE DI RIFRAZIONE EFFICACE, ED HA UNA STRUTTURA DISCRETA A FILI QUANTISTICI MULTIPLI. SI FORNISCE ANCHE IL PROCEDIMENTO PER LA REALIZZAZIONE DI TALE LASER.
ITTO910352A 1991-05-13 1991-05-13 Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione IT1245541B (it)

Priority Applications (7)

Application Number Priority Date Filing Date Title
ITTO910352A IT1245541B (it) 1991-05-13 1991-05-13 Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione
JP4143732A JPH07118567B2 (ja) 1991-05-13 1992-05-11 利得結合分布帰還型半導体レーザ及びその製造方法
EP92108011A EP0513745B1 (en) 1991-05-13 1992-05-12 A gain-coupled distributed-feed-back semiconductor laser
DE69203784T DE69203784T2 (de) 1991-05-13 1992-05-12 Gewinngekoppelter Halbleiterlaser mit verteilter Rückkoppelung.
CA002068443A CA2068443C (en) 1991-05-13 1992-05-12 Gain-coupled distributed-feedback semiconductor laser
DE199292108011T DE513745T1 (de) 1991-05-13 1992-05-12 Gewinngekoppelter halbleiterlaser mit verteilter rueckkoppelung.
US07/882,294 US5276702A (en) 1991-05-13 1992-05-13 Gain-coupled distributed-feedback semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO910352A IT1245541B (it) 1991-05-13 1991-05-13 Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione

Publications (3)

Publication Number Publication Date
ITTO910352A0 ITTO910352A0 (it) 1991-05-13
ITTO910352A1 ITTO910352A1 (it) 1992-11-13
IT1245541B true IT1245541B (it) 1994-09-29

Family

ID=11409344

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO910352A IT1245541B (it) 1991-05-13 1991-05-13 Laser a semiconduttore a reazione distribuita ed accoppiamento di guadagno ,e procedimento per la sua fabbricazione

Country Status (6)

Country Link
US (1) US5276702A (it)
EP (1) EP0513745B1 (it)
JP (1) JPH07118567B2 (it)
CA (1) CA2068443C (it)
DE (2) DE513745T1 (it)
IT (1) IT1245541B (it)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
US5539766A (en) * 1993-08-19 1996-07-23 Matsushita Electric Industrial Co., Ltd. Distributed feedback semiconductor laser
FR2713350B1 (fr) * 1993-12-06 1995-12-29 Franck Delorme Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.
US6151351A (en) * 1994-09-28 2000-11-21 Matsushita Electric Industrial Co., Ltd. Distributed feedback semiconductor laser and method for producing the same
DE69525128T2 (de) * 1994-10-26 2002-09-05 Mitsubishi Chemical Corp., Tokio/Tokyo Lichtemittierende Halbleiteranordnung und Herstellungsverfahren
TW304310B (it) * 1995-05-31 1997-05-01 Siemens Ag
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
JP4375834B2 (ja) 1998-03-19 2009-12-02 シャープ株式会社 利得結合型分布帰還半導体レーザ装置及びその製造方法
US6285698B1 (en) 1998-09-25 2001-09-04 Xerox Corporation MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
JP2000261104A (ja) * 1999-03-08 2000-09-22 Matsushita Electric Ind Co Ltd 半導体レーザ装置及びその製造方法
US6574256B1 (en) 2000-01-18 2003-06-03 Xerox Corporation Distributed feedback laser fabricated by lateral overgrowth of an active region
US7016391B2 (en) 2000-03-13 2006-03-21 Sharp Kabushiki Kaisha Gain-coupled distributed feedback semiconductor laser device and production method therefor
US6881983B2 (en) * 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6649439B1 (en) * 2002-08-01 2003-11-18 Northrop Grumman Corporation Semiconductor-air gap grating fabrication using a sacrificial layer process
DE102005005635A1 (de) * 2004-08-31 2006-03-02 Osram Opto Semiconductors Gmbh Strahlungsemittierendes optoelektronisches Bauelement mit einer Quantentopfstruktur und Verfahren zu dessen Herstellung

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4633476A (en) * 1984-11-16 1986-12-30 Spectra Diode Laboratories, Inc. Semiconductor laser with internal reflectors and vertical output
JPH0716079B2 (ja) * 1987-07-10 1995-02-22 松下電器産業株式会社 半導体レ−ザ装置
JPS6421986A (en) * 1987-07-17 1989-01-25 Nippon Telegraph & Telephone Manufacture of quantum fine line laser diode of current-injection type having buried structure
JPH01106489A (ja) * 1987-10-20 1989-04-24 Fujitsu Ltd 半導体装置及びその製造方法
JPH01248586A (ja) * 1988-03-29 1989-10-04 Nec Corp 光半導体装置の製造方法
JP2713445B2 (ja) * 1988-11-25 1998-02-16 古河電気工業株式会社 半導体レーザ素子
JPH02163928A (ja) * 1988-12-16 1990-06-25 Fujitsu Ltd 量子細線または量子箱の形成方法
JPH02254778A (ja) * 1989-03-29 1990-10-15 Olympus Optical Co Ltd 分布帰還形半導体レーザ及びその製造方法

Also Published As

Publication number Publication date
EP0513745B1 (en) 1995-08-02
CA2068443A1 (en) 1992-11-14
ITTO910352A0 (it) 1991-05-13
EP0513745A3 (en) 1992-12-02
DE513745T1 (de) 1993-09-23
DE69203784T2 (de) 1995-12-21
DE69203784D1 (de) 1995-09-07
CA2068443C (en) 1996-05-21
EP0513745A2 (en) 1992-11-19
JPH07118567B2 (ja) 1995-12-18
US5276702A (en) 1994-01-04
ITTO910352A1 (it) 1992-11-13
JPH05183236A (ja) 1993-07-23

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950419